670X770 Search Results
670X770 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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LED37FC-SMD5Contextual Info: LED37FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 3.75 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions |
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LED37FC-SMD5 LED37FC-SMD5 670x770 150-200mA | |
LED23FC-TEC-PRContextual Info: LED23FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED23FC-TEC-PR LED23FC-TEC-PR 670x770 150-200mA | |
LED23FCContextual Info: LED23FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED23FC LED23FC 670x770 150-200mA | |
LED19FC-TECContextual Info: LED19FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED19FC-TEC LED19FC-TEC 670x770 150-200mA | |
LED18FC-TECContextual Info: LED18FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED18FC-TEC LED18FC-TEC 670x770 150-200mA | |
LED20FC-TECContextual Info: LED20FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED20FC-TEC LED20FC-TEC 670x770 150-200mA | |
LED20FC-SMD5Contextual Info: LED20FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid |
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LED20FC-SMD5 LED20FC-SMD5 670x770 150-200mA | |
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Contextual Info: LED16FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.65 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED16FC-PR LED16FC-PR 670x770 150-200mA | |
LED19FC-PRContextual Info: LED19FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED19FC-PR LED19FC-PR 670x770 150-200mA | |
LED18FC-TEC-PRContextual Info: LED18FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED18FC-TEC-PR LED18FC-TEC-PR 670x770 150-200mA | |
LED19FC-PR-WINContextual Info: LED19FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED19FC-PR-WIN LED19FC-PR-WIN 670x770 150-200mA | |
LED22FC-PR-WINContextual Info: LED22FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED22FC-PR-WIN LED22FC-PR-WIN 670x770 150-200mA | |
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Contextual Info: LED17FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.75 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED17FC-TEC LED17FC-TEC 670x770 150-200mA | |
LED21FC-TEC-PRContextual Info: LED21FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED21FC-TEC-PR LED21FC-TEC-PR 670x770 150-200mA | |
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Contextual Info: LED17FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.75 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED17FC LED17FC 670x770 150-200mA | |
LED19FC-TEC-PRContextual Info: LED19FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED19FC-TEC-PR LED19FC-TEC-PR 670x770 150-200mA | |
LED21FC-SMD5Contextual Info: LED21FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid |
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LED21FC-SMD5 LED21FC-SMD5 670x770 150-200mA | |
LED22FCContextual Info: LED22FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED22FC LED22FC 670x770 150-200mA | |
LED22FC-SMD5Contextual Info: LED22FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid |
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LED22FC-SMD5 LED22FC-SMD5 670x770 150-200mA | |
LED23FC-TECContextual Info: LED23FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED23FC-TEC LED23FC-TEC 670x770 150-200mA | |
LED22FC-TEC-PRContextual Info: LED22FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED22FC-TEC-PR LED22FC-TEC-PR 670x770 150-200mA | |
LED18FC-PRContextual Info: LED18FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED18FC-PR LED18FC-PR 670x770 150-200mA | |
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Contextual Info: LED17FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.75 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED17FC-PR-WIN LED17FC-PR-WIN 670x770 150-200mA | |
LED19FC-SMD5Contextual Info: LED19FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid |
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LED19FC-SMD5 LED19FC-SMD5 670x770 150-200mA | |