66MBI Search Results

K9S2808V0C

Abstract: K9S6408V0C K9S5608V0X
Contextual Info: K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History Revision No Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing

TIB0

Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
Contextual Info: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA

date code marking samsung

Abstract: digital VOICE RECORDER data sheet K9S6408V0A-SSB0 SmartMedia Logical Format K9S3208V0A K9S6408V0A SmartMediaTM Physical Format Specifications A22 T transistor
Contextual Info: SmartMediaTM K9S6408V0A-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark 0.0 Initial issue April 10th 1999 Preliminary 0.1 1. Changed device name - SMFV008A -> K9S6408V0A-SSB0 Sep. 15th 1999 Preliminary

cmos static ram 1mx8 5v

Contextual Info: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V

Samsung 6v 6 pin camera

Contextual Info: Preliminary FLASH MEMORY K9F6408U0A-TCB0, K9F6408U0A-TIB0 Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes

Contextual Info: SmartMediaTM SMFV008A Document Title 8M x 8 Bit SmartMediaTM Card Revision History Revision No. History 0.0 Initial Issue 0.1 1. Changed the following items ITEM Before M-die After(A-die) Program Time 1,000us(Max.) 500us(Max.) 0.8V and 2.0V 1.5V Input and output timing levels

Contextual Info: K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408U0C-VCB0,K9F6408U0C-VIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue.

K9F6408U0C-Q

Contextual Info: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA

K9F6408U0B-TCB0

Abstract: 400F K9F6408U0B K9F6408U0B-TIB0
Contextual Info: K9F6408U0B-TCB0, K9F6408U0B-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark July 17th 2000 Preliminary Initial issue. 1. Changed endurance : 1 million -> 100K program/erase cycles 0.1 1. Changed don’t care mode in address cycles

Contextual Info: FLASH MEMORY KM29V64000T Document Title 8M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S Param eter: 10ms Max. —> 4ms(Max.). 2. Removed reverse type package.

TS 4142

Abstract: ro1f
Contextual Info: Advance Information KM29V64001 TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M+128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase

A17-A22

Contextual Info: Advance Information KM29V64000TS/RS FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : {512 + 16)bit x 8bit • Automatic Program and Erase

400F

Abstract: KM29V64000T
Contextual Info: KM29V64000T FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS Parameter : 10ms Max. → 4ms(Max.). 2. Removed reverse type package.

Contextual Info: K9F6408U0A-TCB0, K9F6408U0A-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes

29V640

Contextual Info: KM29 V 64000 R Flash ELECTR ONICS 8Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512+ 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte

Contextual Info: K9F6408U0B-TCB0, K9F6408U0B-TIB0 Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark July 17th 2000 Preliminary 1. Changed endurance : 1 million -> 100K program/erase cycles

Contextual Info: KM29U64000AT, KM29U64000AIT Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

K9F6408U0C-VCB0

Contextual Info: K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408U0C-VCB0,K9F6408U0C-VIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue.

400F

Abstract: K9F6408U0B K9F6408U0B-TCB0 K9F6408U0B-TIB0 2903M
Contextual Info: K9F6408U0B-TCB0, K9F6408U0B-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark July 17th 2000 Preliminary Initial issue. 1. Changed endurance : 1 million -> 100K program/erase cycles 0.1 1. Changed don’t care mode in address cycles

29V640

Contextual Info: Advance Information FLASH MEMORY KM29V64000T/R 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V64000T/R is a 8M 8,388,608 x8 bit NAND - Memory Cell Array •Data Register Flash memory with a spare 256K(262,144)x8 bit.

KM29U64000IT

Abstract: KM29U64000T 400F
Contextual Info: KM29U64000T, KM29U64000IT FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to cha nge the

smartmedia ecc

Contextual Info: Advanced Information SmartMediaTM K9S6408V0B-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History 0.0 Initial issue Draft Date Remark July 17th 2000 Preliminary Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

K9F6408Q0C

Abstract: K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
Contextual Info: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA

K9F6408U0C

Abstract: K9F6408U0C-tcb0 K9F6408 K9F6408Q0C K9F6408Q0C-B K9F6408Q0C-BCB0
Contextual Info: K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408Q0C : Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Draft Date Remark Initial issue.