66A 113 Search Results

uPD7500* instruction set

Abstract: D7556 JPD7566ACS uPD7500 instruction set a diagram rice cooker microcomputer stop mode halt mode NEC retenti EVAKIT-7500 20ppd7556 uPD7500 instruction set
Contextual Info: NEC #iPD7556/56A/66/66A 4-Bit, Single-Chip CMOS Microcomputers With Comparator NEC Electronics Inc. Description The /JPD7556/66A and /JPD7566/66A are low-end ver­ sions of pPD7500 series products. These m icrocom put­ ers in corp orate a 4-bit com parator input and are useful

MDE1752

Abstract: MDE1752R
Contextual Info: N-Channel Trench MOSFET 40V, 66A,8.0mΩ General Description Features The MDE1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state

MDE1752

Abstract: MDE1752RH
Contextual Info: N-Channel Trench MOSFET 40V, 66A, 8.0mΩ General Description Features VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDE1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability

Contextual Info: HUFA75333G3, HUFA75333P3, HUFA75333S3S TM Data Sheet November 2000 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

APT66M60B2

Abstract: APT66M60L MIC4452
Contextual Info: APT66M60B2 APT66M60L 600V, 66A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: S E M I C O N D U C T O R TM NM93C66A 4K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The NM 93C 66A is 4,096 bits of CM OS non-volatile, electrically erasable m em ory available user organized as either 256 16-bit registers or 512 8-bit registers. The user organization is deter­

300V dc dc boost converter

Abstract: APT66M60L APT66M60B2 MIC4452 AG245 536E
Contextual Info: APT66M60B2 APT66M60L 600V, 66A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

33A250

Contextual Info: APT66M60B2 APT66M60L 600V, 66A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

zvs flyback driver

Contextual Info: APT66F60B2 APT66F60L 600V, 66A, 0.10Ω Max, trr ≤ 310ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

IRF3205ZPBF

Contextual Info: PD - 94869 AUTOMOTIVE MOSFET IRF3205ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 6.5mΩ

IRF3205Z

Abstract: IRF3205ZL IRF3205ZS
Contextual Info: PD - 94653A IRF3205Z IRF3205ZS IRF3205ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V

IRF3205Z

Abstract: IRF3205ZL IRF3205ZS irf3205
Contextual Info: PD - 94653B IRF3205Z IRF3205ZS IRF3205ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V

IRF3205Z

Contextual Info: PD - 94653 IRF3205Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 6.5mΩ

SEC IRF 640

Contextual Info: PD - 94653C IRF3205Z IRF3205ZS IRF3205ZL Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 6.5mΩ G Description

diode 66a

Abstract: IRF 640 mosfet IRF3205Z IRF3205ZL IRF3205ZS
Contextual Info: PD - 94653B IRF3205Z IRF3205ZS IRF3205ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V

IRF 640 mosfet

Abstract: SEC IRF 640
Contextual Info: PD - 94653C IRF3205Z IRF3205ZS IRF3205ZL Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 6.5mΩ G Description

marking 66a

Contextual Info: PD - 95129 IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free

Contextual Info: PD - 95129 IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free

IRF3205

Abstract: marking 66a IRF3205ZPBF
Contextual Info: PD - 95129 IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free

Contextual Info: SEMICONDUCTOR T M General Description Features The NM 93C66A is 4,096 bits of CM OS non-volatile, electrically erasable m em ory available user organized as either 256 16-bit registers or 512 8-bit registers. The user organization is deter­ m ined by the status of the ORG input. The m em ory device is

fuse BJE 147

Abstract: fuse 9 BJE 147 SHINDENGEN TR 222 7431u ZD205 zd106 R-33 ZUP-400 mip0224 d1fl20u
Contextual Info: ZUP-400 SERIES RELIABILITY DATA DWG: JA549-79-01 Q A APPD APPD PorôK' Ptlii. CHK O c ^ /a o /q ^ ^ A DWG ^ nJ n e m ic - l a m b d a l t d . <*• s<7. /& & & INDEX 1 .MTBF; Calculated Value of MTBF R-1 2.Component Derating R -2-12 3.Main Components Temperature Rise

TAG 233 600

Abstract: tag 627 800 LC-R1233P LC-R1233 30ah
Contextual Info: Individual Data Sheets For main and standby power supplies. Expected trickle design life: 6 – 9 years at 20°C according to Eurobat. LC-R1233P Dimensions mm Terminal type M6 16 16 Contents indicated (including the recycle marking, etc.) are subject to change without notice.

relay 12V, 70A

Contextual Info: FSPYC160R, FSPYC160F TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

1/929 rev oh s26

Contextual Info: ES51964 6600counts Dual Display Features • 6,600 counts dual LCD display • 128L QFP package • 3.3V DC power supply • Slow ADC Conversion rate : 2.8 times/s • Bar-graph ADC conversion rate: 28 times/s • Full automatic measurement *Voltage measurement: 660.0mV – 1000V