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    65R2 Search Results

    65R2 Datasheets (15)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge CWS65R290ADR
    Wuhan Xinyuan Semiconductor Co Ltd 650V N-Channel Super Junction MOSFET with 290 mOhm RDS(on) and 15A continuous drain current, available in TO-252, TO-220, TO-220F, and TO-263-2L packages for high-efficiency power applications. Original PDF
    badge AK65R260
    AK Semiconductor N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 260 mΩ maximum on-resistance, 15 A continuous drain current, low gate charge, and TO-263, TO-220, or TO-220F package options. Original PDF
    badge JMH65R290AE
    Jiangsu JieJie Microelectronics Co Ltd 650 V, 12.0 A superjunction power MOSFET in TO-263-3L package with 290 mOhm typical RDS(on) at 10 V gate voltage, low gate charge, and fast switching capability for industrial, telecom, and power supply applications. Original PDF
    badge AK65R2K4I
    AK Semiconductor N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 2.2 ohm typical RDS(ON), 1.8 A continuous drain current, low gate charge, and TO-251 or TO-252 package options. Original PDF
    badge JMH65R290AF
    Jiangsu JieJie Microelectronics Co Ltd 650V SuperJunction Power MOSFET with 260 mOhm RDS(ON) at 10V VGS, 12.0A continuous drain current, low gate charge, and TO-220FP-3L package for high-efficiency power applications. Original PDF
    badge AK65R260D
    AK Semiconductor N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 260 mOhm typical on-resistance, 15 A continuous drain current, and low gate charge for high-efficiency power conversion applications. Original PDF
    badge AK65R2K4K
    AK Semiconductor N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 2.4 ohm typical RDS(ON), 1.8 A continuous drain current, low gate charge, and TO-251 or TO-252 package options. Original PDF
    badge AK65R260F
    AK Semiconductor N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 260 mOhm RDS(ON), 15 A continuous drain current, available in TO-263, TO-220, and TO-220F packages. Original PDF
    badge AK65R2K2K
    AK Semiconductor N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 2.2 ohm typical RDS(ON), 2 A continuous drain current, low gate charge, and TO-251 or TO-252 package options. Original PDF
    badge AK65R2K2I
    AK Semiconductor N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 2.2 ohm typical RDS(ON), 2 A continuous drain current, low gate charge, and TO-251 or TO-252 package options. Original PDF
    badge SLB65R280E7
    Maplesemi N-channel Power MOSFET SLB65R280E7 in TO-263 package, 650V drain-source voltage, 15A continuous drain current, 280 mΩ RDS(on) at 10V VGS, low gate charge of 19.6nC, 100% avalanche tested, Pb-free and RoHS compliant. Original PDF
    badge JMH65R290APLN
    Jiangsu JieJie Microelectronics Co Ltd 650V SuperJunction Power MOSFET in DFN8080-4L package with 290 mOhm RDS(on) at 10V VGS, 10A continuous drain current, low gate charge, and fast switching capability for telecom, industrial, and power supply applications. Original PDF
    badge SLF65R280E7
    Maplesemi 650V N-channel Super-JMOSFET with 15A continuous drain current, 280mΩ typical RDS(on) at 10V VGS, 19.6nC gate charge, and TO-220F package, designed for high-efficiency switching power conversion applications. Original PDF
    badge SLF_P65R280E7C
    Maplesemi 650V N-Channel Super-JMOSFET with 15A continuous drain current, 238mΩ typical RDS(on) at VGS = 10V, low gate charge of 21.0nC, and 100% avalanche tested for high reliability in switching power applications. Original PDF
    badge JMH65R290ACFP
    Jiangsu JieJie Microelectronics Co Ltd 650 V, 12.0 A superjunction power MOSFET with 260 mOhm RDS(on) at 10 V VGS, TO-220FP-NL package, designed for high-efficiency power conversion applications. Original PDF
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    65R2 Price and Stock

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    Rochester Electronics LLC NCP1246AD065R2G

    SWITCHING CONTROLLER, CURRENT-MO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NCP1246AD065R2G Bulk 643,632 316
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    FLIP ELECTRONICS NCP1246AD065R2G

    IC OFFLINE SWITCH FLYBACK 7SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NCP1246AD065R2G Tape & Reel 12,500 2,500
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    Infineon Technologies AG IPL65R230C7AUMA1

    MOSFET N-CH 650V 10A 4VSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () IPL65R230C7AUMA1 Digi-Reel 6,837 1
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    IPL65R230C7AUMA1 Tape & Reel 6,837 3,000
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    IPL65R230C7AUMA1 Cut Tape 6,837 1
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    Avnet Americas IPL65R230C7AUMA1 Tape & Reel 3,000 39 Weeks 3,000
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    Newark () IPL65R230C7AUMA1 Tape & Reel 30 100
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    IPL65R230C7AUMA1 Cut Tape 30 1
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    Rochester Electronics IPL65R230C7AUMA1 25,841 1
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    TME IPL65R230C7AUMA1 1
    • 1 $3.12
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    EBV Elektronik IPL65R230C7AUMA1 3,000 40 Weeks 3,000
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    Vyrian IPL65R230C7AUMA1 10,873
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    Suzhou Good-Ark Electronics Co Ltd GSFX65R220

    MOSFET, N-CH, SINGLE, 20.00A, 65
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GSFX65R220 Tape & Reel 5,000 2,500
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    onsemi NCP1239BD65R2G

    IC OFFLINE SWITCH FLYBACK 7SOIC
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    DigiKey () NCP1239BD65R2G Digi-Reel 4,384 1
    • 1 $0.93
    • 10 $0.66
    • 100 $0.53
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    NCP1239BD65R2G Cut Tape 4,384 1
    • 1 $0.93
    • 10 $0.66
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    NCP1239BD65R2G Tape & Reel 2,500 2,500
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    Avnet Americas NCP1239BD65R2G Tape & Reel 32 Weeks 2,500
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    Rochester Electronics NCP1239BD65R2G 93 1
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    Avnet Asia NCP1239BD65R2G 32 Weeks 2,500
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    65R2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Demands for High-efficiency Magnetics in GaN Power Electronics

    Abstract: 20n60cfd TPH3006
    Contextual Info: APEC 2014, Fort Worth, Texas, March 16-20, 2014, IS2.5.3 Demands for High-efficiency Magnetics in GaN Power Electronics Yifeng Wu, Transphorm Inc. Table of Contents 1. 1st generation 600V GaN-on-Si HEMT properties and performance 2. GaN HEMT high-frequency application examples


    Original
    5W/600V 9W/600V Demands for High-efficiency Magnetics in GaN Power Electronics 20n60cfd TPH3006 PDF

    65R2

    Abstract: 110-12F
    Contextual Info: Kihgbright BI-COLOR & BI-POLAR LED LAMPS W277A6 W117 W91A6 Part No. X D nm Material | Lens Type Viewing Angle Iv (mcd) @ 20mA Min. W119 Typ. Dimension 291/2 1,75mm x 3.9mm Rectangular GaP 568 W277A6GNW 10 •white diffused GaAs P/GaP 60° in o l p": -H'


    OCR Scan
    W277A6 W91A6 W277A6GNW 06lTYP. W277A6GYW W91A6GNW W91A6YGW W119EGW \079TTYP. 65R2 110-12F PDF

    CD-1515H-4D

    Abstract: 5902 BPW34 BPW34 application CD-11H CD-11HL CD-1705 CD-1712 CD-33H CD-33HL
    Contextual Info: Œ NTRONIC INC-, E-0 »IV m S 2 5 Q DDDÜ4Ô1 036 I CENB Series 29 Specialty Products A variety of product configurations have been developed that are now available without tooling charges. These devices offer a wide range of spectral and packaging options for cost effective, high volume requirements. Additional data available upon


    OCR Scan
    mS25Q CD-1705 AX65-R2F CD-25T CD-33H-2D CD-1515H-4D CD-33H-4D CD-1515H-4D 5902 BPW34 BPW34 application CD-11H CD-11HL CD-1705 CD-1712 CD-33H CD-33HL PDF

    EIA 549 Class 130B transformer

    Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
    Contextual Info: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.


    Original
    000pF 000pF 0201ZD103KAT2A 0201ZC103KAT2A 0201YC101KAT2A 0201YC271KAT2A 0201YC471KAT2A 02013A1R0CAT2A 02013A4R7CAT2A 02013A100JAT2A EIA 549 Class 130B transformer mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR PDF