65NM SRAM Search Results

Flip-chip 1.8V SRAM

Abstract: 65nm 65nm sram CS200 CS100 CS200A cmos logic 90nm
Contextual Info: 65nm CMOS Technology, CS200 / CS200A Description As miniaturization of silicon devices progresses, Fujitsu provides the most competitive, world-class technology to ASIC and COT customers. Fujitsu's 65nm technology has shrunk gates by 25% when compared to the 90nm technology.

180-nm CMOS standard cell library inverter

Abstract: 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130nm 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201
Contextual Info: Fujitsu @ 65nm: Providing Solutions through Integrated Design Services The Fujitsu Advantage…Not Just a Foundry Contents „ „ „ Benefits of leading-edge technology at 65nm Challenges Solutions Fujitsu Microelectronics America, Inc. 2 FSA Semiconductor Forum, June 14, 2006

samsung S3C6410

Abstract: S3c6410 s3c6410 datasheet s3c6410 ARM11 processor Samsung S3C6410 ARM ARM1176ZJF S3C6430 oneDRAM S3C64 s3c6410 arm1176JZF datasheet
Contextual Info: Samsung S3C6410 Mobile Processor POWERING ADVANCED PERSONAL NAVIGATION DEVICES AND SMARTPHONES RUNNING DEMANDING 3D APPLICATIONS The 65nm S3C6410 reduces power requirements and also includes interfaces for lowpower memory while supporting DVFS. The processor’s capabilities

Infineon X-GOLD 213

Abstract: X-GOLDTM213 xgold 213 infineon x-gold X-GOLD 208 INFINEON infineon baseband processor x-gold 208 X-GOLD 213 INFINEON xgold X-GOLD x-gold 213
Contextual Info: Product Brief X-GOLDTM213 Lowest-cost EDGE Single-Chip Solution for Mobile Internet Browsing & Messaging Main Features THE Infineon X-GOLD 213 is the first Single-Chip in 65nm CMOS technology that integrates Baseband, RF Transceiver, Power Management Unit

S3C2450

Abstract: ARM926EJ s3c2450 S3C2443 s3c245 s3c2443 datasheet samsung bluetooth 13x13 65nm sources ARM9 400mhz S3C24X
Contextual Info: Samsung S3C2450 Mobile Processor RICH FEATURE SET AT LESS COST FOR PERSONAL NAVIGATION DEVICES AND OTHER HANDHELDS The 65nm S3C2450 is the new generation of Samsung’s popular S3C24xx series, offering pin-to-pin compatibility along with a wealth of new features that were

CS200

Abstract: 65nm DDR PHY ASIC HDMI to lvttl cmos logic 90nm DAC 90nm CS200A 65-NM UHS SD Card Hdmi to micro usb wiring
Contextual Info: 65nm CMOS Standard Cell Leakage Current Large CS200 ASIC Series Server/ Network Low Power Power Low Lineup Lineup CS200LL CS200A HV-Tr DHV-Tr HS-Tr Mo C Mobile STD-Tr STD-Tr LL-Tr Computing High End Server HighHigh Performance Performance Lineup LineupCS200HP

CS26LV64173

Contextual Info: Low Power Pseudo SRAM 4 M Words x 16 bit CS26LV64173 Revision History Rev. No. 1.0 History Issue Date 1. New Release. Mar.27, 2013 2. Product Process change from 90nm to 65nm 3. The device build in Power Saving mode as below : 3-1. Deep Power Down DPD 3-2. Partial Array Refresh (PAR)

X-GOLD 118

Abstract: xgold 118 ARM11 processor Infineon X-GOLD 116 X-GOLD x-goldtm ARM11 baseband block diagram of wireless gsm camera infineon x-gold gsm modem block diagram
Contextual Info: Product Brief X-GOLDTM116 Ultra-low cost GSM/GPRS Single-Chip Solution for Messaging Phones Main Features THE Infineon X-GOLD 116 is the first Single-Chip in 65nm CMOS technology that integrates Baseband, RF Transceiver, Power Management Unit and FM Radio. After the successful market introduction of the 2nd generation

Contextual Info: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous

infineon x-gold

Abstract: Infineon X-GOLD 113 ARM11 processor arm1176 block diagram of mp3 player digital with fm radio receiver X-GOLD x-gold 113 x-goldtm101 FM stereo wireless headset GSM transmitter receiver
Contextual Info: Product Brief X-GOLDTM113 Ultra-low cost GSM/GPRS Single-Chip Solution for Music Phones Main Features THE Infineon X-GOLD 113 is the first Single-Chip in 65nm CMOS technology that integrates Baseband, RF Transceiver, Power Management Unit and FM Radio. After the successful market introduction of the 2nd generation

WP1F

Contextual Info: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous

PF38F4060M

Abstract: PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901
Contextual Info: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous

WP1F

Abstract: BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C
Contextual Info: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous

X-GOLD 110

Abstract: Infineon X-GOLD 110 XGOLD110 X-GOLDTM110 XMM1100 X-GOLD XMMTM1100 infineon x-gold eWLB-184 B153-H9349-X-X-7600
Contextual Info: Product Brief X-GOLDTM110 Ultra-Low Cost GSM/GPRS Single-Chip for Voice, SMS and basic Multimedia Main Features THE X-GOLD 110 brings the Infineon GSM single-chip ULC family to the next level of integration based on a 65nm technology node. X-GOLDTM110 is an ideal solution for ULC Music Phones supporting key features such as

Error Correction

Abstract: hamming code error correction code Asynchronous SRAM
Contextual Info: Error Correction Code ECC Based New High Speed Low Power 4Mb Asynchronous SRAM ISSI’s latest Error Correction based 4Mb High Speed Low Power Asynchronous SRAM is currently sampling. This innovative design reinforces ISSI’s long-term commitment to SRAMs with

65nm sram

Abstract: SRAM 1GHz 45nm
Contextual Info: 08cj-B-09 低電圧SRAM技術 A 0.7V Ultra Low Voltage SRAM Technology 0.7V動作をサポート ビット線分割技術 ◆従来より51%消費電力カット ◆SRAMセルの不良率を2桁以上改善 40.2mW Data destruction SRAM消費電力（mW）

Ba-5590

Abstract: uav design BA5590 uav design specification uav sensors radar dsp processor radar sensor specification SPACE POWER ELECTRONICS EP3C120 Altera PCMCIA
Contextual Info: White Paper Addressing SWaP Challenges in Military Platforms With 65-nm FPGAs and Structured ASICs Introduction Now more than ever, size, weight, and power SWaP must be managed and reduced across virtually all military and aerospace applications to improve operational efficiency and logistics, increase mission life, and reduce the total cost

R8A77860NBGV

Abstract: sh7786 SH-7786 SH-4A ddr3 ram E10A-USB Renesas Technology Release automotive PCIE interface R8A77860
Contextual Info: FOR IMMEDIATE RELEASE PRESS CONTACT: Akiko Ishiyama Renesas Technology America, Inc. 408 382-7407 akiko.ishiyama@renesas.com Renesas Technology’s Upgraded SH7786 Dual-Core Processor for High-performance Multimedia Systems Delivers a Faster Data Transfer Rate using Less Power

CS200A

Abstract: fujitsu transistor CS200 IEC61883 generic dvd player power supply wimax soc FCBGA728
Contextual Info: Winter 2006 The News on the Latest Semiconductor Technologies and Products from Fujitsu Microelectronics America, Inc. The Fujitsu WiMAX SoC Enjoys Strong Industry Acceptance Major broadband Wireless Access manufacturers are choosing the Fujitsu IEEE 802.16-2004

SLB9635

Abstract: bcm5787 ecm-945gm rtl8101e it8888g alc888 EMB-9682 88E8053 ECM-3711 CS5536
Contextual Info: Applied w A p p l i e d C o m p u t i n g S o l u t i o n s • Embedded Computing • Long-life Motherboard • Computer-on-Module Series ECM-GM965 • Fanless Embedded System 3.5" Intel GME965 Core 2 Duo Micro Module • Multi-functional Touch Panel PC

k225

Abstract: K-225 NiSi PCI-Express 2.0 CS-300H
Contextual Info: High-Performance Semiconductor Manufacturing Services Engagement Models ASIC Fujitsu’s Mie Factory COT Library IP Design Wafer Process 300mm fabs PT Assembly FT Pure ASIC TGD* ASIC *Tested Good Die COT + Design Service COT w/ Pure COT IP Support ▼ Fujitsu

BCM59035

Abstract: diagram circuit usb mp3 player with radio fm lcd Broadcom BCM21331 BCM21331 BCM2048 usb video player circuit diagram Broadcom WLAN transceiver bcm2133 echo mixer circuit diagram BCM2085
Contextual Info: BCM21331 Single-Chip 65-nm EDGE Baseband + RF + Multimedia SUMMARY OF BENEFITS FEATURES • • • Enables high-performance, low-cost EDGE/GPRS handset design General Characteristics • Single-chip, single-die, Class 33, 4-band, EDGE/GPRS baseband processor

Contextual Info: BCM21331 SINGLE-CHIP 65-nm EDGE BASEBAND + RF + MULTIMEDIA SUMMARY OF BENEFITS FEATURES • • • • • Enables the highest performance yet lowest cost EDGE/GPRS handset design General characteristics • Single-chip, single-die, Class 33, 4-band, EDGE/GPRS baseband

TAG 9344

Abstract: car Speed Sensor using RFID CS200 FUJITSU FRAM CAR HORN Specification CMOS image sensor fingerprint circuit wimax soc CS100 CS200A CS300
Contextual Info: 2005 Executive Briefing Fujitsu Microelectronics America, Inc Program Introduction Emi Igarashi Corporate Overview Kazuyuki Kawauchi Business Update Keith Horn Summary / Q&A Keith Horn 09/20/2005, Executive Briefing 2 Fujitsu Microelectronics America, Inc. 2005