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    65GP60L Price and Stock

    Microchip Technology Inc

    Microchip Technology Inc APT65GP60L2DQ2G

    IGBT PT MOS 7 Combi 600 V 65 A TO-264 MAX
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    Microchip Technology Inc APT65GP60L2DQ2

    Insulated Gate Bipolar Transistor, 198A I(C), 600V V(BR)CES, N-Channel, TO-264AA
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    Vyrian APT65GP60L2DQ2 2,574
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    65GP60L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    APT65GP60L2DF2

    Contextual Info: 65GP60L2DF2 600V POWER MOS 7 IGBT TO-264 Max The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		apt65gp60l2df2o-264apt65gp60l2min PDF

    65GP60L

    Contextual Info: 65GP60L2D2 600V POWER MOS 7 IGBT TO-264 Max The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		apt65gp60l2d2o-264apt65gp60l2dmin65gp60l PDF

    Contextual Info: APT65GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		apt65gp60b2 PDF