65A 600V Search Results

GY50NC60WD

Abstract: JESD97 STGY50NC60WD
Contextual Info: STGY50NC60WD N-channel 600V - 65A - Max247 Ultra fast switching PowerMESH IGBT Features Type VCES STGY50NC60WD 600V IC VCE sat (max)@25°C @100°C < 2.5V 65A • Very high frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility)

Contextual Info: STGY50NC60WD N-channel 600V - 65A - Max247 Ultra fast switching PowerMESH IGBT Features Type VCES STGY50NC60WD 600V IC VCE sat (max)@25°C @100°C < 2.5V 65A • Very high frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility)

Contextual Info: Modular Terminals Type WKI U4oot 10 mm2 U4oot 16 mm2 74 Wire Size_ fine stranded 1-10 CSA_ 600V 16-6 AWG 70A UL_ 600V 16-6 AWG 65A stranded 10-16 stranded 10 fine stranded 1-16 600V 14-4 AWG 95A 600V _1_2j4_AWG_ 65A Fjeld/90A Factory

Contextual Info: EuroMag Series PCB Mount Terminal Blocks EM2929 Series Euro-Mag Terminal Blocks Hi-Current; 10.16 Centers SPECIFICATIONS Rating: 65A, 600V Center Spacing: 0.40” 10.16mm Wire Range: #6-20 AWG Housing Material: UL rated 94V0 Thermoplastic Contact Material: Tin-Plated Copper

Contextual Info: 10-PZ06NRA069FP03-P967F78Y 10-FZ06NRA069FP03-P967F78 flow NPC 0 600V/60A & 99mΩ PS* Features flow 0 12mm housing ● *PS: 65A parallel switch 60A IGBT and 99mΩ MOSFET ● neutral point clamped inverter ● reactive power capability ● low inductance layout

WE VQE 11 E

Abstract: DIODE 65A IRGT1065F06 FF1000
Contextual Info: International Ö R edffler PD-9.957B IRGTI065F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT • Rugged Design »Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant .Switching-Loss Rating includes all "tail" losses VCE = 600V lc = 65A

E62622

Contextual Info: Euro-MAG Series PCB – Spring Clamp Single & Double Row Filtered Connectors MAGNUM 15288 Series Disconnect Terminal Blocks for DIN Rail Mount SPECIFICATIONS Rating: 65A, 600V* Center Spacing: .54” 13.7 mm Wire Range: #6-16 AWG Screw Size: #8-32 zinc plated philslot

AL 1450 DV

Contextual Info: APT60M80L2VR 600V 65A 0.080W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

TSB20

Abstract: OEM 615 TSB200003DSUS R3164 09DS 01ds
Contextual Info: Europa Blocks Tubular Screw Barrier Strip 14.5MM PITCH, 65A SERIES TSB2000 PHYSICAL PROPERTIES Housing: HOUSING MATERIAL: Polyamide 6 FLAMMABILITY: UL94V-2 COLOR: Natural off white Terminal: TUBULAR CONTACT: Brass, tin plated SCREW: Steel, M3.5 SCREW PLATING: Zinc with chromate

NDN63

Abstract: NDN11 din mount 35mm
Contextual Info: Rail Mount Terminal Blocks NDN63 Inches Millimeters SPECIFICATIONS Rating: 65A, 600V; UL/CSA Center spacing: .375” (9.52) Number of poles: 3 Circuits per foot: 30 Circuit jumper: JN3, 2 circuits Wire size: AWG #6-18 CU Screw size: #10-32 Mounting options: 35mm DIN rail, C-rail

APT60M80L2VR

Contextual Info: APT60M80L2VR 600V 65A 0.080Ω POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

igbt module bsm 100 gb 60 dl

Contextual Info: BSM 50 GB 60 DL IGBT Power Module Preliminary data • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GB 60 DL 600V 65A HALF-BRIDGE 1 Q67050-A1000-A70

Contextual Info: APT60M80L2VFR 0.080Ω 600V 65A POWER MOS V FREDFET L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT60M80L2VR 600V 65A 0.080Ω POWER MOS V MOSFET L2VR TO-264 Max V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

00456

Contextual Info: APT60M80L2VFR 600V 65A POWER MOS V FREDFET 0.080Ω L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: BSM 35 GD 120DLE3224 IGBT Power Module Preliminary data • Low Loss IGBT • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 35 GD 120DLE3224 1200V 65A IC Package

SiC MOS

Abstract: mosfet 60a 200v
Contextual Info: APTM100A13SC Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ Ω max @ Tj = 25°C ID = 65A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7 MOSFETs

Contextual Info: APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Features • Power MOS 7 MOSFETs

TD8A

Contextual Info: TD8A60 Standard Triac Symbol ○ 2.T2 TO- 252 VDRM = 600V IT RMS = 8 A ▼▲ ○ 3.Gate ITSM = 65A 1.T1 ○ 1 2 3 Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 8 A ) ◆ High Commutation dv/dt General Description

vqe 24 e

Abstract: vqe 24 d
Contextual Info: euoec BSM 50 GB 60 DL F IGBT Power Module Prelim inary data • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE BSM 50 GB 60 DL 600V 65A Package O rdering Code HALF-BRIDGE 1 Q67050-A1000-A70

rg 35 DIOD

Contextual Info: IRGKI065F06 Fast Speed IGBT "CHOPPER" IGBT INT-A-PAK • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses V Œ = 600V ic = 65A VC£ O N < 2 .3 V D e s c rip tio n

Contextual Info: APTM100A13SC Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ max @ Tj = 25°C ID = 65A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7 MOSFETs

10si6

Abstract: 07.311.4153.0 57.910.5053.0
Contextual Info: Modular Fuse Terminal & Feed-through Terminal with Universal Foot 10mnr Wire Size fine stranded 1-10 CSA_ 600V* 16-6 AWG 15A 600V 22-6 AWG 15A UL A p p ro va ls 10mrrr stranded 10-16 fine stranded 1-10 600V 16-6 AWG stranded 10-16 65A ' Ä ® ««&<§ <m

Contextual Info: BSM 35 GB 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 35 GB 120 DL 1200V 65A IC Package Ordering Code HALF BRIDGE 1 Maximum Ratings