657A Search Results

2SJ539

Abstract: DSA003643 Hitachi 2SJ
Contextual Info: 2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.16 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220AB D G 1 2

transistor bc 549

Abstract: Al p73 68 pin fujitsu microcontroller diode U1J MB89650AR MB89653AR MB89655AR MB89PV650A MQP-100C-P02 QFP-100
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS07-12530-1E 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89650AR Series MB89653AR/655AR/656AR/657AR/657A MB89PV650A • DESCRIPTION The MB89650AR series has been developed as a general-purpose version of the F2MC*-8L family consisting

JANKCAR2N7389

Abstract: 2N7426 IRHC7360SE JANKCAF2N7389 IRHC9Y130 JANKCAR2N7268 2n7391 2n7425 JANKCAR2N7261 2n7389
Contextual Info: INCH-POUND MIL-PRF-19500/657A 22 February 2000 SUPERSEDING MIL-PRF-19500/657 23 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N and P-CHANNEL, SILICON VARIOUS TYPES JANHC, AND JANKC This specification is approved for use by all Departments

063 8pin

Abstract: emi 0223 HD151TS301RP HD151TS304 HD151TS304RP DSA003635
Contextual Info: HD151TS304RP Spread Spectrum Clock for EMI Solution ADE-205-657A Z Preliminary Rev. 1 Sep. 2001 Description The HD151TS304 is a high-performance Spread Spectrum Clock modulator. It is suitable for low EMI solution. Features • Supports 10 MHz to 60 MHz operation. (Designed for XIN = 24 MHz and 48 MHz)

IRHC7260SE

Abstract: JANKCAR2N7389
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 April 2011. INCH-POUND MIL-PRF-19500/657B 26 January 2011 SUPERSEDING MIL-PRF-19500/657A 22 February 2000 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE,

2SC519A

Abstract: 2SC520a 2SA656A
Contextual Info: SILICON PNP TRIPLE DIFFUSED MESA TYPE 2SA656A,657A,658A INDUSTRIAL APPLICATIONS POWER AMPL I F I E R APPLICATIONS. P OWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES: . High Voltage : Vcjjo=~130V, VcEO=~ H O V 2SA656A

Hitachi 2SJ

Abstract: Hitachi DSA002757
Contextual Info: 2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.16 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline 2SJ539 Absolute Maximum Ratings (Ta = 25°C)

PWM22

Abstract: TO12 CASE ROM-100QF-28DP-8L2
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12530-1E 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89650AR Series MB89653AR/655AR/656AR/657AR/657A MB89PV650A • DESCRIPTION The MB89650AR series has been developed as a general-purpose version of the F2MC*-8L family consisting

4cz3

Contextual Info: HM62V8128B Series 131,072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-657A Z Rev. 1.0 Sep. 19, 1996 Description The Hitachi HM62V8128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 |xm Hi-CMOS shrink process

2SJ539

Abstract: Hitachi DSA00396
Contextual Info: 2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.16 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220AB D G 1 2

2SJ539

Abstract: 2SJ539-E PRSS0004AC-A
Contextual Info: 2SJ539 Silicon P Channel MOS FET REJ03G0886-0300 Previous: ADE-208-657A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.16 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching

2SC519A

Abstract: 2SA656A 2SA657A 2SA658A g20Q 2SA656(A)
Contextual Info: 2/U D > P N P = « J £ « b t-tt^ h 5 > 2? ^ SILICON PIMP TRIPLE DIFFUSED MESA TRANSISTOR TENTATIVE r 2 s a 656A 2 s a 657A 2 s a 658A i II I t ffl O O XKtlX'i y INDUSTRIAL APPLICATIONS O DC-May/«-#l O < iS u ¥ =l w- - o _ Power A m p lifier,

communication IC 3802

Abstract: timebase IC 68 pin fujitsu microcontroller al p55 transistor diode U1J FCH 211 MB89650AR MB89653AR MB89655AR MB89PV650A
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12530-1E 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89650AR Series MB89653AR/655AR/656AR/657AR/657A MB89PV650A • DESCRIPTION The MB89650AR series has been developed as a general-purpose version of the F2MC*-8L family consisting

Contextual Info: HM62V8128B Series 131,072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-657A Z Rev. 1.0 S ep.19, 1996 Description The Hitachi HM62Y8128B is a CMOS static RAM organized 131.072-word X 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 ¡am Hi-CMOS shrink process

LQFP-100

Abstract: MB89650AR MB89653AR MB89655AR MB89PV650A MQP-100C-P02 QFP-100
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12530-2E 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89650AR Series MB89653AR/655AR/656AR/657AR/657A MB89PV650A • DESCRIPTION The MB89650AR series has been developed as a general-purpose version of the F2MC*-8L family consisting of

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

Contextual Info: Surface Acoustic Wave Resonator Filter to k o No. SF086HS-008 1. Dimensions 2.0 max Unit: mm - «C Input: 9 Output: 4 Ground: 1,2,3 5,6,7 8,10 Orientation mark Tolerance: ± 0.2 2. Electrical characteristics Parameter Unit 2.1 Center frequency Fo

KPE-209

Abstract: KPE-250 KS-6612 KS-3624 KS-3606 KPE-262 KPE-755 KPE-263 KS-6624 KPE-250H
Contextual Info: PIEZO INDICATOR Wire Type Shape Shape KPE-250 KPE-250H KPE-251 Model Number KPE-250 3,500 ± 500 Rated Frequency (Hz) 3 ~ 28 8 ~ 18 Max. 6@12VDC Max. 14@12VDC Operating Voltage Range (VDC) Current Consumption (mA) Sound Pressure Level (dB) KPE-250H Model Number

Contextual Info: P54/74PCT657/A OCTAL BIDIRECTIONAL TRANSCEIVER WITH 8-BIT PARITY GENERATOR PHELDMB1MAISV %1- FEATURES

Contextual Info: P54/74PCT657/A OCTAL BIDIRECTIONAL TRANSCEIVER WITH 8-BIT PARITY GENERATOR p b e u im o m a ir y 7$- -FEATURES • Full CMOS Implementation ■ Fully TTL Compatible Input and Output Levels ■ Low Power Operation ■ 3-State Output ■ 8-Blt Parity Generator/Checker

Contextual Info: TA2159F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2159F FM Synthesizer Tuner TA2159F is the FM synthesizer tuner with built-in FM front end, FM IF/detector, FM stereo decoder, PLL and system microcontroller which is designed for 3 V audio equipment.

Contextual Info: TA2159F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2159F FM Synthesizer Tuner TA2159F is the FM synthesizer tuner with built-in FM front end, FM IF/detector, FM stereo decoder, PLL and system microcontroller which is designed for 3 V audio equipment.

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

gfwb7

Abstract: CDA10.7 CR43-150 1SS193 CDA10 KV1770 MAX212 SFE10 TA2159F TAN-325
Contextual Info: TAN-325 Preliminary Tentative Data Audio IC Application Circuit TAN-325 Example of 3-V FM Radio Circuit TA2159F 1. Outline TA2159F FM tuner PLL L Stereo dec. R MAIN mcon. Display This is an application example of an FM radio circuit targeting compact sets.