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Catalog Datasheet	Type	Document Tags	PDF
65656F Abstract: TM1019 DSP 6713 65608E 80C31E 80C32E 80C52E TSC-21020 TSC691E dsp radiation Contextual Info: Radiation TEMIC Radiation Evaluation Results and Targets Total Dose Device Family Format/ Function/Speed/ Consumption TEMIC Type Total Dose Parametric Latch–Up LET Threshold SEU Cross Section/BIT Functionnal (Krads) (Krads) Iccsb (mA) (MeV/mg/ cm2) (MeV/mg/	Original	80c31e scc22900 80c32e 80c52e +1065162e scc2215 tm1019 16kx9 65656f dsp 6713 65608e tsc-21020 tsc691e dsp radiation	PDF
M65601 Abstract: P883 Contextual Info: M65601 1 M 1 Very Low Power CMOS SRAM Introduction The M65601 is a very low power CMOS static RAM organized as 1048576x1 bits. It is manufactured using the MHS high performance 0.5 µm CMOS technology named SCMOS. current Typical value = 0.2 µA with a fast access time	Original	m65601 1048576x1 65601e p883	PDF

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65656F

Abstract: TM1019 DSP 6713 65608E 80C31E 80C32E 80C52E TSC-21020 TSC691E dsp radiation
Contextual Info: Radiation TEMIC Radiation Evaluation Results and Targets Total Dose Device Family Format/ Function/Speed/ Consumption TEMIC Type Total Dose Parametric Latch–Up LET Threshold SEU Cross Section/BIT Functionnal (Krads) (Krads) Iccsb (mA) (MeV/mg/ cm2) (MeV/mg/

Original

80c31e scc22900 80c32e 80c52e +10

PDF

M65601

Abstract: P883
Contextual Info: M65601 1 M 1 Very Low Power CMOS SRAM Introduction The M65601 is a very low power CMOS static RAM organized as 1048576x1 bits. It is manufactured using the MHS high performance 0.5 µm CMOS technology named SCMOS. current Typical value = 0.2 µA with a fast access time

Original

m65601 1048576x1 65601e p883

PDF