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    651 DIODE Search Results

    651 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    651 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    r03003

    Abstract: MPS-202201-71 MPS-202201 mps2022
    Contextual Info: MPS-202201 -71 100 TO 2000 MHz GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY !•—H 098 FEATURES -1 -n*> a5 25 I I I / “ 2- PL +34 dBm TYPICAL IP3 +22 dBm TYPICAL P1dB (654)


    OCR Scan
    mps-202201mps-202201-71r0-3003ps-202201-71-2+2r03003mps2022 PDF

    Contextual Info: PRELIMINARY MPS-252708-85 1.7 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +41 dBm TYPICAL IP3 +27.5 dBm TYPICAL P1dB 11.5 dB TYPICAL GAIN +12 VOLT OPERATION HIGH POWER ADDED EFFICIENCY


    OCR Scan
    mps-252708-85 PDF

    RO3003

    Abstract: mps2024
    Contextual Info: MPS-202409-85 500 TO 2000 MHz SELF-BIASED GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY oeo_| D im ensions in inches FEATURES 1-52 and (mm) INPUT'* • +36 dBm TYPICAL IP3 IT • +24 dBm TYPICAL P1dB


    OCR Scan
    mps-202409-85ro3003mps2024 PDF

    Contextual Info: PRELIMINARY MPS-252708-85 1.7 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY D frn « n*lo n * n incfte» oeo ^ 52j FEATURES ] and mm INPUT- • +41 dBm TYPICAL IP3 • +27.5 dBm TYPICAL P1dB


    OCR Scan
    mps-252708-85match-13 PDF

    mps2524

    Contextual Info: PRELIMINARY MPS-252409-85 1.7 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +38 dBm TYPICAL IP3 • +24 dBm TYPICAL P1dB • 11 dB TYPICAL GAIN • +10.0 VOLT OPERATION


    OCR Scan
    mps-252409-85ro-3003135mamps2524 PDF

    mps 940

    Abstract: R03003
    Contextual Info: UN-RELEASED PRELIMINARY MPS-093011-85 860 TO 940 MHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES • +45 dBm TYPICAL IP3 • +30 dBm TYPICAL P1dB • 17 dB TYPICAL POWER GAIN


    OCR Scan
    mps-093011-85r0-3003mps 940r03003 PDF

    mps2027

    Abstract: MPS-202708-85
    Contextual Info: PRELIMINARY MPS-202708-85 500 TO 2000 MHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +39 dBm TYPICAL IP3 • +27.0 dBm TYPICAL P1dB • 10.5 dB TYPICAL GAIN • +12 VOLT OPERATION


    OCR Scan
    mps-202708-85mps-202706-3smps2027 PDF

    Contextual Info: PRELIMINARY MPS-202708-85 500 TO 2000 MHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +39 dBm TYPICAL IP3 • +27.0 dBm TYPICAL P1dB • 10.5 dB TYPICAL GAIN • +12 VOLT OPERATION


    OCR Scan
    mps-202708-85bl241gg PDF

    PI74FCT646T

    Abstract: PI74FCT648T
    Contextual Info: PI74FCT646/648/651/652T 25Ω Ω Series P174FCT2646T/2652T OCTAL REGISTERED TRANSCEIVERS PI74FCT646T/648T/651T/652T


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    pi74fct646/648/651/652tp174fct2646t/2652tpi74fct646t/648t/651t/652tpi74fct2646t/2652t+4pi74fct646t/648t/651t/652t/2646t/2652tps2022api74fct646tpi74fct648t PDF

    r03003

    Contextual Info: UN-RELEASED PRELIMINARY 2 i LA MPS-253011-85 TTT MICROWAVE TECHNOLOGY 2.4 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER_ 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +45 dBm TYPICAL IP3 • +30 dBm TYPICAL P1dB • 12.5 dB TYPICAL POWER GAIN


    OCR Scan
    mps-253011-85r0-3003ps-253011-85r03003 PDF

    mps2522

    Contextual Info: PRELIMINARY MPS-252201-81 S T Ì m 1.7 TO 2.5 GHz GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY i . h .096 _ o 2.5 FEATURES .063 2-PL .25 +35 dBm TYPICAL IP3 1.6 ) (6.42 +22 dBm TYPICAL P1dB


    OCR Scan
    mps-252201-81r0-3003mps-252201mps2522 PDF

    Contextual Info: 11 PRELIMINARY MPS-252201-81 ñ f í 1.7 TO 2.5 GHz GaAs FET AMPLIFIER ¡ 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY U— 008 - n B 2-5 25 FEATURES .063 2-PL +35 dBm TYPICAL IP3 (6.4^ .25 <6.4)


    OCR Scan
    mps-252201-81r0-300300004b7 PDF

    HP5082-2835

    Abstract: OPA650 OPA651 OPA651P OPA651PB OPA651U OPA651UB PDS-1265A 11PA
    Contextual Info: OPA OPA651 651 OPA 651 Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES ● ● ● ● STABLE IN GAINS: ≥ 2V/V LOW POWER: 50mW GAIN-BANDWIDTH: 940MHz at G = 2 FAST SETTLING TIME: 16ns to 0.01% ● LOW HARMONICS: –78dB at 5MHz ● LOW INPUT BIAS CURRENT: 4µA


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    opa651940mhz470mhz12-bit+9exce054hp5082-2835opa650opa651popa651pbopa651uopa651ubpds-1265a11pa PDF

    Contextual Info: Si i PRELIMINARY MPS-302201 -87 r r 100 TO 3000 MHz GaAs FET AMPLIFIER kJ. MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES I MPS302201-87 • +34 dBm TYPICAL IP3 0.0151 TYP. 0.18- SQ. RF IN I RF OUT • +22 dBm TYPICAL P1dB


    OCR Scan
    mps-302201mps302201-87mps-302201-87r0-3003+1mp8-302201 PDF

    Contextual Info: SF MICROWAVE TECHNOLOGY MPS-202201-71 100 TO 2000 MHz GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES • +22 dBm TYPICAL P1dB • 9.5 dB TYPICAL GAIN • +5 VOLT VDS • +35 dBm THIRD ORDER INTERCEPT • 2:1 MAXIMUM INPUT/OUTPUT VSWR


    OCR Scan
    mps-202201-71ps-202201-71 PDF

    8D649

    Abstract: 8D648 BD646
    Contextual Info: K MAGNA Yffiffi 8D645; 647 BD6a9; 651 SILICONDARLINGTON POWERTRANSISTORS N-P-Nepitaxialbasetransistorsin monolithic Darlingtoncircuit for audiooutput stagesand general amplifierand switchingapplications;fO-22Oplasticenvelope. P-N-Pcomplements are BD646,8D648,


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    8d645o-22obd6468d648+28d649le50t PDF

    Contextual Info: FEATURES PROFESSIONAL LED INDICATORS Ø12.7mm Mounting Black anodised aluminium housing 651 SERIES PACK QUANTITY = 10 PIECES Excellent wide viewing angle characteristics Sealed to IP67 Suitable for high vibration applications Internal reverse protection diode fitted as standard in all


    Original
    sta1-2224vdc230vac PDF

    Contextual Info: FEATURES PROFESSIONAL LED INDICATORS Ø12.7mm Mounting Black anodised aluminium housing 651 SERIES PACK QUANTITY = 10 PIECES Excellent wide viewing angle characteristics Sealed to IP67 Suitable for high vibration applications Internal reverse protection diode fitted as standard in all


    Original
    01-651-114-2may PDF

    651-114-23

    Abstract: A 651 colour code diode
    Contextual Info: FEATURES PROFESSIONAL LED INDICATORS Ø12.7mm Mounting Black anodised aluminium housing 651 SERIES PACK QUANTITY = 10 PIECES Excellent wide viewing angle characteristics Sealed to IP67 Suitable for high vibration applications Internal reverse protection diode fitted as standard in all


    Original
    150mm1000mm651-114-23a 651+1colour code diode PDF

    Contextual Info: 651 RS series features • Ø12.7mm mounting • Black anodised aluminium housing • Colour diffused lens with a wide viewing angle • Sealed to IP67 • Suitable for high vibration applications • Internal reverse protection diode fitted as standard in all voltage models


    Original
    PDF

    Contextual Info: 651 RS series features • Ø12.7mm mounting • Black anodised aluminium housing • Colour diffused lens with a wide viewing angle • Sealed to IP67 • Suitable for high vibration applications • Internal reverse protection diode fitted as standard in all voltage models


    Original
    PDF

    ir 035

    Abstract: MCT2201
    Contextual Info: Issued March 1997 232-5626 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is


    Original
    mct22011507c10sec260mw+2100x1ir 035 PDF

    Contextual Info: 651 RS series features • Ø12.7mm mounting • Black anodised aluminium housing • Colour diffused lens with a wide viewing angle • Sealed to IP67 • Suitable for high vibration applications • Internal reverse protection diode fitted as standard in all voltage models


    Original
    PDF

    Contextual Info: 651 series features • Black anodised aluminium housing • Colour diffused lens with a wide viewing angle • Sealed to IP67 • Suitable for high vibration applications • Internal reverse protection diode fitted as standard in all voltage models • Pack Quantity = 10 Pieces


    Original
    PDF