6508 RAM Search Results

Contextual Info: ECX-6508-33.3333M TR Pb RoHS PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6508 -33.3333M TR Series Ecliptek Custom Crystal Packaging Options Tape & Reel

Contextual Info: ECX-6508-33.3333M Pb RoHS PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6508 -33.3333M Series Ecliptek Custom Crystal Nominal Frequency 33.3333MHz

HM-6508-9

Abstract: 6508 intersil HM1-6508-9 HM1-6508B-9 HM3-6508-9 HM3-6508B-9 HM-6508 HM-6508B-9
Contextual Info: HM-6508 TM 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.

Contextual Info: HM-6508/883 Semiconductor 102 4x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to M IL-STD-883 and is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.

HM3-6508-9

Abstract: HM-6508-9 HM-6508 6508B9 HM1-6508-9 HM1-6508B-9 HM3-6508B-9 HM-6508B-9 6508 RAM HM16508B-9
Contextual Info: HM-6508 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.

6508 RAM

Contextual Info: HM-6508/883 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.

6508 RAM

Abstract: HM-6508-9 HM3-6508-9 HM1-6508-9 HM1-6508B-9 HM3-6508B-9 HM-6508 HM-6508B-9
Contextual Info: HM-6508 S E M I C O N D U C T O R 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous

6508+(RAM)

Abstract: 6508
Contextual Info: Wiftsras HM-6508/883 1 0 2 4 x 1 C M O S RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.

1024X1

Contextual Info: HM-6508/883 £ü HARRIS S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • This Circuit is Processed In Accordance to MII-Std-883 and is Fully Conformant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM

harris 6508

Contextual Info: HM-6508 HARRIS S E M I C O N D U C T O R 102 4x 1 CMOS RAM March 1997 Features Description The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high per­

harris 6508

Abstract: HM-6508
Contextual Info: HM-6508/883 S E M I C O N D U C T O R 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM

Contextual Info: HM-6508/883 fS l H A R R I S S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and Is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM

365089

Abstract: LA 6508
Contextual Info: HM-6508 Semiconductor 1 02 4x 1 CMOS RAM March 1997 Description Features • Low Power Max • Low Power O p eratio n . 20mW/MHz Max • Fast Access Time. 180ns Max

4464 ram

Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
Contextual Info: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT­ AC H I ID T M ITS U ­ BISHI M OT­ O R O LA N AT­ IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH­ IB A N M O S,

TO 48 A IC MP3 PROCESSOR

Abstract: PNX6508 mp3 player recorder circuit diagram PNX6511 STLC2584 tea5991 PNX6515 mp3 player one chip from usb MPEG-4 decoder receiver PCF50615
Contextual Info: Cellular system solution 6508 Cost-effective EDGE solution with integrated 1.3-Mpixel camera interface and stereo MP3 player July 2009 www.stericsson.com ST-Ericsson introduces a new single-core system solution for EDGE camera phones. The embedded multimedia engine offers

PNX6508

Abstract: QCIF BGB211S DSP stereo encoder processor upgrade mp3 player recorder circuit diagram PNX6511 tea5991 FM RDS ENCODER 6508 RAM ST-Ericsson arm946
Contextual Info: Cellular system solution 6508 Cost-effective EDGE receiver solution with integrated 1.3-Mpixel camera interface and stereo MP3 player February 2009 www.stericsson.com ST-Ericsson introduces a new single-core system solution for EDGE-Rx camera phones. It has a tailored telecom path

Contextual Info: HM-6508 f ï î H A R R IS U U S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power S tandby. 50^iW Max. • Low Power O p e ra tio n . 20mW /MHz Max.

Contextual Info: S m a rris HM -6508/883 1024 x 1 CMOS RAM June 1989 P in o u t Features • This Circuit is Processed in Accordance to Mii-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power S tand .

LA 6508

Abstract: HM-6508-9 HM-6508 HM-6508-5 HM-6508B-8 HM-6508B-9 HM-6508-8 6508-5 6508 ram
Contextual Info: ¡2 HARRIS HM-6508 1024 x 1 CMOS RAM Features P in o u t • • • • • • • • • TO P VIEW Low Standby P o w e Max. Low Operating P o w e r . 20m W /M H z Max.

Contextual Info: 3 J H A R R HM-6508 IS 1024 x 1 CMOS RAM Features • • • • • • • • • Pinout TOP VIEW Low Standby P o w e r. 50|iW Max. Low Operating P o w e W /M H z Max.

Contextual Info: a HM-6508 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 1 CM O S RAM August 1996 Features Description • Low Power S ta n d b y .50|iW Max • Low Power O p e ra tio n . 20m W /MHz Max •

HM-6508-5

Contextual Info: Specifications H M -6508-5 ABSOLUTE MAXIMUM RATINGS O PERATING RANGE Supply Voltage - V C C -GN D -0 .3 V to +8.0V Input or Output Voltage Applied (GND -0.3V ) to (V C C +0.3V) Storage Temperature -6 5 °C t o +1500C Operating Supply Voltage -V C C Commercial

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

Contextual Info: S HM-6508/883 HARRIS S E M I C O N D U C T O R 1024 X 1 CMOS RAM August 1996 Description Features • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. • Low Power S ta n d b y .50^W Max