650 DIODE Search Results

STW23NM60ND

Abstract: STB23NM60ND STF23NM60ND STI23NM60ND STP23NM60ND
Contextual Info: STx23NM60ND N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh II Power MOSFET with fast diode D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Features Type STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND VDSS (@Tjmax) RDS(on) max 650 V 650 V 650 V 650 V 650 V

25NM60ND

Abstract: F25NM60ND
Contextual Info: STP/F25NM60ND-STW25NM60ND STB25NM60ND-STI25NM60ND N-channel 600V - 0.13Ω - 21A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS @ TJMAX RDS(on) max 650 V 650 V 650 V 650 V 650 V < 0.16 Ω < 0.16 Ω

Sanken rb60

Abstract: rb40 rb60 RECTIFIER CTB34 CTUG3D marking WMM ctu22s CTU-12S CTB-34 fmlg12
Contextual Info: SANKEN y ELECTRIC CO L T D 3 SE ,3> Fast Recovery Diodes Rating/ Characteristics Vrm V (A) Ifsm (A) Tj ("C) 1350 1350 250 450 650 150 250 450 650 250 450 650 250 450 650 150 250 450 650 1300 1300 200 400 600 100 200 400 600 200 400600 200 400 600 100 200

150a gto

Abstract: b958 100P-160 tp102
Contextual Info: SIE D • □□□3C 155 10Ö * S E K G Ö13bb71 s e MIKRDn SEMIKRON INC Vrsm Vrrm V Ifa v Fast Recovery Rectifier Diodes sin. 180; Tease ~ 85 °C 770 A " r - 0 3 - z ,3 SKN 650 F 800 SKN 650 F 08 1200 SKN 650 F 12 1400 SKN 650 F 14 1600 SKN 650 F 16 1800

11NM60N

Contextual Info: STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features Type VDSS @TJmax RDS(on) max ID 650 V 650 V 650 V 650 V 650 V 650 V 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 10 A 10 A 10 A

11NM60N

Abstract: f11nm60n p11nm60 f11nm60 STB11NM60N STB11NM60N-1 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N
Contextual Info: STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features Type VDSS @TJmax RDS(on) max ID 650 V 650 V 650 V 650 V 650 V 650 V 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 10 A 10 A 10 A

11NM60N

Abstract: f11nm60n STF11NM60N p11nm60 f11nm60 STB11NM60N STB11NM60N-1 STD11NM60N STD11NM60N-1 STP11NM60N
Contextual Info: STD11NM60N-1 - STB11NM60N/-1 STD11NM60N-STP11NM60N-STF11NM60N N-channel 600 V - 0.37 Ω - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh Power MOSFET Features Type VDSS @TJmax RDS(on) max ID 650 V 650 V 650 V 650 V 650 V

21nm60n

Abstract: F21NM60 f21nm60n 21nm60 21nm60nd 21nm6 STB21NM60ND STF21NM60ND STI21NM60ND STP21NM60ND
Contextual Info: STP/F21NM60ND-STW21NM60ND STB21NM60ND-STI21NM60ND N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @ TJmax RDS on max 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω

21nm60n

Abstract: 21nm60 21nm60nd f21nm60n st marking STP MOSFET MARKING STP JESD97 STB21NM60ND STF21NM60ND STI21NM60ND
Contextual Info: STP/F21NM60ND-STW21NM60ND STB21NM60ND-STI21NM60ND N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @ TJmax RDS on max 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω

ISD2520

Abstract: STF22NM60 W22NM60 ST T4 0560 F22N STB22NM60 STB22NM60-1 STP22NM60 STW22NM60 STW22
Contextual Info: STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 650V @ Tjmax- 0.19Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh MOSFET ADVANCED DATA TYPE VDSS @Tjmax RDS(on) STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 650 V 650 V 650 V 650 V

t4 0560 equivalent

Abstract: STW22NM60
Contextual Info: STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 650V @ Tjmax- 0.19Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh MOSFET ADVANCED DATA TYPE VDSS @Tjmax RDS(on) STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 650 V 650 V 650 V 650 V

65083

Abstract: DM8820 NE555 pulse generator opto-isolators bidirectional
Contextual Info: Issued July 1988 F9085 High speed logic-logic opto-isolators Stock numbers 650-829, 650-835, 650-841, 650-857 These opto-isolators are the first family of truly logic compatible optically coupled interface gates. The family consists of four device types offering LSTTL

11NM60

Abstract: STP11NM60FP 11A 650V MOSFET STB11NM60 STB11NM60-1 STP11NM60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 650V@Tjmax 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE VDSS @ Tjmax STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 650 V 650 V 650 V 650 V RDS(on) < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω

CF2-12V

Abstract: dual latching relay ic circuit diagram of relay 8 pin cf2q-12v
Contextual Info: CF NEW DUAL POWER AUTOMOTIVE RELAY 22.5 .886 22.5 .886 16.5 .650 16.5 .650 16.5 .650 CF-RELAYS Normally Normally Open Closed • 7 Amp Steady/30 Amp Inrush current capability • Simple footprint enables ease of PC board layout 16.5 .650 Coil 1 Common Standard type

ctb-34

Abstract: rb60 51 MARKING V1J fmlg12 333X ES01 ES01A ES01F ES01Z EU02
Contextual Info: •1 3SE D SANKEN ELECTRIC CO LTD Fast Recovery Diodes E 3 7 ^ 0 7 4 1 GOOGÖDS 0 E 3SAKJ7^ 03" û I eVrh: 100~ 1500V Eio:0.5~ i.2A RH/ES/RS/RH/RU/EU V rm V Io Ifsm (A) (A) 450 650 850 250 450 650 1550 250 450 650 1600 650 850 — Ir |R(H) trr (M ) (//A )

20nm60

Abstract: W 20NM60 STB20NM60-1 STP20NM60FP STB20NM60 STP20NM60
Contextual Info: STP20NM60 - STP20NM60FP STB20NM60 STB20NM60-1 N-CHANNEL 650V @Tjmax - 0.25Ω -20A TO-220/FP/D2PAK/I2PAK MDmesh MOSFET TYPE VDSS @Tjmax STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 • ■ ■ ■ ■ 650 650 650 650 V V V V RDS(on) ID < 0.29 Ω < 0.29 Ω

Contextual Info: Laser Diodes Laser Module LC-LMD-650-03 Ø 8 mm, 650 nm Laser Module Features 1. APC auto power control IC inside 2. Low current consumption of the APC circuit 3. Surge current protection 4. High quality lens for output beam Part No. Indications LC-LMD 650

Contextual Info: CPW2-0650-S010B Silicon Carbide Schottky Diode Chip VRRM VRRM = = 650 650 VV Z-Rec Rectifier IF IF AVG = = 1010 AA Features • • • • • • • QcQ c = = 2525 nCnC Chip Outline 650-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery

Contextual Info: STx8NM60N N-channel 600 V, 0.56 Ω,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS @Tjmax Type RDS(on) max ID 3 2 3 STB8NM60N 650 V < 0.65 Ω 7A STD8NM60N 650 V < 0.65 Ω 7A STD8NM60N-1 650 V < 0.65 Ω 7A STF8NM60N 650 V

F8NM60N

Abstract: P8NM60N STB8NM60N stx8nm60n P8NM60 JESD97 STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N
Contextual Info: STx8NM60N N-channel 600 V, 0.56 Ω,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS @Tjmax Type RDS(on) max ID 3 2 1 3 STB8NM60N 650 V < 0.65 Ω 7A STD8NM60N 650 V < 0.65 Ω 7A STD8NM60N-1 650 V < 0.65 Ω 7A STF8NM60N 650 V

Contextual Info: CDM4-650 SURFACE MOUNT SILICON N-CHANNEL MEDIUM POWER MOSFET 4.0 AMP, 650 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM4-650 is a 650 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor

LC-LMD-650-06

Contextual Info: Laser Diodes Laser Module LC-LMD-650-06 650 nm Laser Module Features 1. APC auto power control IC inside 2. Low current consumption of the APC circuit 3. Superior laser beam profile Part No. Indications LC-LMD 650 06 XX A Output Power: 01- < 1 mW 03 - < 2 ~ 3 mW

D5NM6

Abstract: p8nm60fp b8nm60 d5nm d5nm60 P8NM60 STB8NM60 STB8NM60T4 STD5NM60 STD5NM60-1
Contextual Info: STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type VDSS RDS on ID Pw STD5NM60 650 V <1Ω 5A 96 W 1 STD5NM60-1 650 V <1Ω 5A 96 W DPAK STB8NM60 650 V <1Ω 5A 100 W STP8NM60

Contextual Info: CDM7-650 SURFACE MOUNT SILICON N-CHANNEL MEDIUM POWER MOSFET 7.0 AMP, 650 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM7-650 is a 650 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor