64NC Search Results

Contextual Info: FDMS5360L_F085 N-Channel Power Trench MOSFET 60V, 60A, 8.5mΩ Features „ Typ rDS on = 6.5mΩ at VGS = 10V, ID = 60A „ Typ Qg(tot) = 64nC at VGS = 10V, ID = 60A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control

k4b2g1646q

Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Contextual Info: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

DC-DC converter epaper

Abstract: MAX17135 e-paper epaper MAX1713
Contextual Info: 19-5881; Rev 2; 5/12 TION KIT EVALUA BLE AVAILA Multi-Output DC-DC Power Supply with VCOM Amplifier and Temperature Sensor for E-Paper Applications The MAX17135 is a complete power-management IC for E-paper displays that provides source- and gate-driver power supplies, a high-speed VCOM amplifier, and a

Contextual Info: W632GU6KB 16M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

Contextual Info: W631GU6KB 8M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

W631GG6KB-12

Abstract: W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I
Contextual Info: W631GG6KB 8M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

W631GU8KB15K

Contextual Info: W631GU8KB 16M  8 BANKS  8 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

W632GG6KB

Abstract: W632GG6KB15I
Contextual Info: W632GG6KB 16M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

irf6798MTR1PBF

Abstract: IRF6798MPbF IRF6798MTRPbF
Contextual Info: PD - 97433B IRF6798MPbF IRF6798MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 0.95mΩ@ 10V 1.6mΩ@ 4.5V

MT41K256M8DA

Abstract: MT41K256M8DA-125 MT41K MT41K256M8 mt41k256m8da-125-k 96-Ball MT41K256M8DA125K
Contextual Info: Preliminary‡ 2Gb: x4, x8, x16 Automotive DDR3 SDRAM Features Automotive DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 banks MT41J256M8 – 32 Meg x 8 x 8 banks MT41J128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • •

MAX1713

Abstract: e-paper
Contextual Info: 19-5881; Rev 0; 7/11 TION KIT EVALUA BLE AVAILA Multi-Output DC-DC Power Supply with VCOM Amplifier and Temperature Sensor for E-Paper Applications The MAX17135 is a complete power-management IC for E-paper displays that provides source- and gate-driver power supplies, a high-speed VCOM amplifier, and a

K4B4G0846C

Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
Contextual Info: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

MICRON ddr3

Abstract: A-225 DDR3 1gb dimm
Contextual Info: 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 Banks MT41J256M8 – 32 Meg x 8 x 8 Banks MT41J128M16 – 16 Meg x 16 x 8 Banks Options1 Features • • • • • • • • • • • • • • • • • • Marking

DDR3-1866 RDIMM SPD JEDEC

Abstract: M392B5670GB0-CF8
Contextual Info: Rev. 1.01, Dec. 2010 M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin VLP Registered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Contextual Info: Rev. 1.01, Dec. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

MAX31855J

Abstract: MAX31855 max31855k 200nC Thermocouple Type K MAX31855T
Contextual Info: 19-5793; Rev 0; 3/11 MAX31855 Cold-Junction Compensated Thermocouple-to-Digital Converter General Description The MAX31855 performs cold-junction compensation and digitizes the signal from a K, J, N, T, or E type thermocouple. Contact the factory for S and R type thermocouples. The data is output in a signed 14-bit, SPI compatible, read-only format. This converter resolves

hynix ddr3

Abstract: ddr3 2133 DDR3-2133 DDR3-1333 DDR3-1866 780max
Contextual Info: DDR3 Device Operation DDR3 SDRAM Device Operation 1 DDR3 Device Operation Contents 1. Functional Description 1.1 Simplified State Diagram 1.2 Basic Functionality 1.3 RESET and Initialization Procedure 1.3.1 Power-up Initialization Sequence 1.3.2 Reset Initialization with Stable Power

Contextual Info: 19-5881; Rev 2; 5/12 TION KIT EVALUA BLE AVAILA Multi-Output DC-DC Power Supply with VCOM Amplifier and Temperature Sensor for E-Paper Applications The MAX17135 is a complete power-management IC for E-paper displays that provides source- and gate-driver power supplies, a high-speed VCOM amplifier, and a

Contextual Info: SG572568FU8EWUU June 28, 2010 Ordering Information Part Numbers Description Module Speed SG572568FH8EWLC 256Mx72 2GB , DDR3, 204-pin Registered SO-RDIMM, Parity, ECC, 128Mx8 Based, DDR3-1066-777, 1.5V, 30.00mm, Green Module (RoHS Compliant). PC3-8500 @ CL 7, 8

Contextual Info: DATA SHEET 1G bits DDR3 SDRAM EDJ1108BABG 128M words x 8 bits EDJ1116BABG (64M words × 16 bits) Specifications Features • Density: 1G bits Organization  16M words × 8 bits × 8 banks (EDJ1108BABG)  8M words × 16 bits × 8 banks (EDJ1116BABG)

M471B5173

Contextual Info: Rev. 1.0, Apr. 2012 M471B5173CB0 M471B1G73CB0 204pin Unbuffered SODIMM based on 4Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

K4B4G0446D-MC

Abstract: k4b4g0446d M393B5270DH0
Contextual Info: Rev. 1.3, Jul. 2011 M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

Contextual Info: Rev. 1.01, Mar. 2012 K4B2G0446E K4B2G0846E 2Gb E-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

M378B5273EB0

Abstract: K4B2G0846E-BC
Contextual Info: Rev. 1.0, Jan. 2012 M378B5773EB0 M391B5773EB0 M378B5273EB0 M391B5273EB0 240pin Unbuffered DIMM based on 2Gb E-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.