6466 CB Search Results

PCI6466

Abstract: PCI6466-CB66BI IT 8517 6466-CB66BI 6466 cb cb66bi SPUL32BAR2 PCI6466-CB66BIG 6466CB-SIL-DB-P1-1 6446
Contextual Info: PCI 6466 Data Book PCI 6466 Data Book Version 1.0 April 2005 Website: Technical Support: Phone: FAX: http://www.plxtech.com http://www.plxtech.com/support/ 408 774-9060 800 759-3735 408 774-2169 2005 PLX Technology, Inc. All rights reserved. PLX Technology, Inc., retains the right to make changes to this product at any time, without notice. Products may

JEP-108E

Abstract: vs133 x090 PC133 registered reference design VS133-R512 Buffalo Technology PDRB-28998-X045-01 X045
Contextual Info: VS133-R512 PDRB-28998-X045-01 DATA SHEET Memory Module Part Number VS133-R512 Buffalo Technology 1/7 VS133-R512 PDRB-28998-X045-01 1. Description 168pin Registered DIMM PC133/CL=3 2. Module Specification Item Capacity Physical Bank(s) Module Organization

TB-410-63

Contextual Info: High Gain, High IP3 Monolithic Amplifier 50Ω GVA-63+ 0.01 to 6 GHz The Big Deal FREE X-Parameters* • High Gain • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to RFMD SBB5089Za,b SOT-89 PACKAGE Product Overview

Contextual Info: High Gain, High IP3 Monolithic Amplifier 50Ω GVA-63+ 0.01 to 6 GHz The Big Deal • High Gain • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to RFMD SBB5089Za,b SOT-89 PACKAGE Product Overview GVA-63+ RoHS compliant is an wideband amplifier fabricated using InGap HBT technology and offers

SPF5043

Contextual Info: Flat Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 6 GHz CMA-63+ The Big Deal • Ceramic, Hermetically Sealed, Nitrogen filled • Low profile case, .045” high • High Gain • Broadband High Dynamic Range without external Matching Components CASE STYLE: DL1721

Contextual Info: High Gain, High IP3 Monolithic Ampli er 50Ω GVA-63+ 0.01 to 6 GHz The Big Deal •฀฀High฀Gain •฀ Broadband฀High฀Dynamic฀Range฀without฀ external Matching Components •฀ May฀be฀used฀as฀a฀replacement฀to฀RFMD฀SBB5089Za,b

Contextual Info: Flat Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 6 GHz CMA-63+ The Big Deal • Ceramic, Hermetically Sealed, Nitrogen filled • Low profile case, .045” high • High Gain • Broadband High Dynamic Range without external Matching Components CASE STYLE: DL1721

Contextual Info: Flat Gain, High IP3 Monolithic Ampli er 50 CMA-63+ 0.01 to 6 GHz The Big Deal •฀฀Ceramic,฀Hermetically฀Sealed,฀Nitrogen฀illed •฀ Low฀proile฀case,฀.045”฀high •฀฀High฀Gain •฀ Broadband฀High฀Dynamic฀Range฀without฀

AN 7274

Abstract: 7476 PIN DIAGRAM DL1721
Contextual Info: Flat Gain, High IP3 Monolithic Amplifier 50Ω CMA-63+ 0.01 to 6 GHz The Big Deal • Ceramic, Hermetically Sealed, Nitrogen filled • Low profile case, .045” high • High Gain • Broadband High Dynamic Range without external Matching Components Product Overview

Contextual Info: High Gain, High IP3 Monolithic Amplifier 50Ω GVA-63+ 0.01 to 6 GHz The Big Deal FREE X-Parameters* • High Gain • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to RFMD SBB5089Za,b SOT-89 PACKAGE Product Overview

CMA-63

Abstract: OR1K PL-366
Contextual Info: Flat Gain, High IP3 Monolithic Amplifier 50Ω CMA-63+ 0.01 to 6 GHz The Big Deal • Ceramic, Hermetically Sealed, Nitrogen filled • Low profile case, .045” high • High Gain • Broadband High Dynamic Range without external Matching Components CASE STYLE: DL1721

Contextual Info: Flat Gain, High IP3 Monolithic Amplifier 50Ω CMA-63+ 0.01 to 6 GHz The Big Deal • Ceramic, Hermetically Sealed, Nitrogen filled • Low profile case, .045” high • High Gain • Broadband High Dynamic Range without external Matching Components Product Overview

Contextual Info: TOSHIBA THMY7280D1BEG-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280D1BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and an unbuffer on a printed circuit board.

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FC422N2

Abstract: MC720N FC112N2 FC120N2 DF16F4BN DF07F0W1 MC422N DF07F w2 417 DF07
Contextual Info: Interconnection Systems DRAGONFLY High Density Signal and Power Connectors Positronic Industries www.connectpositronic.com High Density Signal and Power Interconnection Systems Dragonfly High Density Signal/ Power Interconnection Systems Unless otherwise specified, dimensional tolerances are:

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AR254

Abstract: MC14568B MC14526B motorola phase comparator 1x100 MC14522B MC14569B MC14XXXBCL MC14XXXBCP MC14XXXBD
Contextual Info: g M O T O R O L A PHASE CO M PARATO R AND PROGRAM M ABLE COUNTERS L SUFFIX CERAMIC CASE 620 The M C 1 4 5 6 8 B c o n sists o f a pha se c o m p a ra to r, s d iv id e b y 4, 15, 64 o r 100 c o u n te r and a p ro g ra m m a b le d iv id e b y-N 4 -b it b in a ry c o u n te r (all

14569b

Contextual Info: MOTOROLA MC14568B PHASE CO M PAR ATO R AN D P R O G R A M M A B LE CO UNTERS L SUFFIX CERAMIC CASE 620 Th e M C 1 4 5 6 8 B c o n s is ts o- a p h a s e c o m p a ra to r , a d iv id e -b y -4 , !6 , 64 o r 100 c o u n te r a n d a p ro g ra m m a b le d iv id e - b y -N

Contextual Info: Data Sheet Rev.1.2 09.11.2010 1GB DDR2 – SDRAM SO-DIMM Features: 200 Pin SO-DIMM • SEN01G64D1BF1SA-30R 1GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5  Module density 1024MB with 8 dies and 1 rank

Contextual Info: Data Sheet Rev.1.1 18.11.2010 512MB DDR2 – SDRAM DIMM Features: 240 Pin UDIMM • SEU06464H1CF1SA-25R •      512MB PC2-6400 in FBGA Technology RoHS compliant Options:  Data Rate / Latency Marking DDR2 800 MT/s CL6 DDR2 667 MT/s CL5 -25

Contextual Info: Data Sheet Rev.1.2 02.12.2010 1GB DDR2 – SDRAM DIMM Features: 240 Pin UDIMM • SEU01G64A3BH1MT-25R •      1GB PC2-6400 in FBGA Technology RoHS compliant Options:  Data Rate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5  Module Density

Contextual Info: Data Sheet Rev.1.1 18.11.2010 2GB DDR2 – SDRAM DIMM Features: • 240 Pin DIMM SEU02G64B3BF2SA-25R 2GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5  Module density 2048MB with 16 dies and 2 ranks

Contextual Info: Data Sheet Rev.1.0 20.11.2010 1GB DDR2 – SDRAM registered DIMM Features: • 240 Pin RDIMM SEP01G72J2BF1SA-30R 1GB PC2-5300 in FBGA Technology RoHS compliant •      Options:  Data Rate / Latency DDR2 533MT/s CL4 DDR2 667MT/s CL5  Marking

Contextual Info: Data Sheet Rev.1.2 09.11.2010 1GB DDR2 – SDRAM SO-DIMM Features: 200 Pin SO-DIMM • SEN01G64D1BF1SA-30R 1GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5  Module density 1024MB with 8 dies and 1 rank