631B Search Results

Contextual Info: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-631B Z Rev. 2.0 Nov. 12, 1996 Description The Hitachi HM51W17805 is a CMOS dynamic RAM, organized 2,097,152-words X 8-bits. It employs the most advanced CMOS technology for high performance and low power consumption. The HM51W17805

51W17805

Contextual Info: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-631B Z Rev. 2.0 Nov. 12, 1996 Description The Hitachi HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805 offers Extended

HM51W17805

Abstract: HM51W17805J-5 HM51W17805J-6 HM51W17805J-7 HM51W17805LJ-5 HM51W17805S-5 HM51W17805S-6 HM51W17805S-7
Contextual Info: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM ADE-203-631B Z Rev. 2.0 Nov. 12, 1996 Description The Hitachi HM51W17805 is a CMOS dynamic RAM, organized 2,097,152-words × 8-bits. It employs the most advanced CMOS technology for high performance and low power consumption. The HM51W17805

2N7395

Abstract: 2N7397 2N7398 2N7396 sl230 2N739 SL430 SL234
Contextual Info: NCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 June 2004. MIL-PRF-19500/631B 9 March 2004 SUPERSEDING MIL-PRF-19500/631A 20 August 1998 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

17805T

Abstract: 51W17805 51w17805j
Contextual Info: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-631B Z Rev. 2.0 Nov. 12, 1996 Description The Hitachi HM51W17805 is a CMOS dynamic RAM, organized 2,097,152-words x 8-bits. It employs the most advanced CMOS technology for high performance and low power consumption. The HM51W17805

hitachi 28 pin plastic soj package dimensions

Contextual Info: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-631B Z Rev. 2.0 Nov. 12, 1996 Description The Hitachi HM51W17805 is a CMOS dynamic RAM, organized 2,097,152-words X 8-bits. It employs the most advanced CMOS technology for high performance and low power consumption. The HM51W17805

298G8

Abstract: 117E16 240/TDA 2606
Contextual Info: 11-13 Port Road Queenstown, SA 5014 ABN 53 008 189 535 Tel: 8 8240 2244 Fax: 8 8240 2255 Web: www.hammondmfg.com E-mail: australia@hammfg.com 2012 Australian Trade Price List Transformers visit us at www.hammondmfg.com Effective date: September 1, 2012 Replaces all other Price Lists

ALNUP+161609

Contextual Info: HAMMOND MANUFACTURING CO. INC. 475 Cayuga Rd., Suite 100 Cheektowaga, NY 14225 Tel: 716 630-7030 Fax: (716) 630-7042 www.hammondmfg.com Manufacturer’s Suggested U.S. Resale Pricing Transformers & Inductors Small Enclosures Outlet Strips Electrical Enclosures

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
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Contextual Info: PowerTrench Power Clip 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 9.6 mΩ at VGS = 4.5 V, ID = 10 A dual package. The switch node has been internally connected to

642B 8pin ic

Abstract: ic631 85637 IC-6430 641B
Contextual Info: MIC631732/33 and MIC641/42/43 r ^ n Step-Up Switching Regulators The M IC 631/641, M IC632/642, and M IC633/643 are fixed frequency, hysteretic-m ode, step-up boost regulators. Switching at 50kHz, and requiring only two external com po­ nents, these controllers form a com pletely functional, fully

63b46

Abstract: 61B46 SPRU074C 629Ah 610C 610E 611C 612C 612E 614C
Contextual Info: TMS320x281x, 280x DSP Enhanced Controller Area Network eCAN Reference Guide Literature Number: SPRU074C May 2002 − Revised February 2005 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,

Joongwon Rapid Fuse

Abstract: AC300V JR33-100 jr31 JR30TYPE jr56 JR31-30 A75031 k22s JR36-20
Contextual Info: JOONGWON RAPID FUSE n 4 ^ i l • 250V 300V 600V o x TT F — FUSE JR20M JR30S 1 1 1 J R 6 0 S Ì 250V JR20TYPE 300V CURRENT LIMITING FUSES FOR PROTECTING SEMICONDUCTORS JR30TYPE 600V JR60TYPE $ r § 5!p ap £ ! A l l a n NEW PRODUCT New Ceramic Fuse ULTRA-RAPID FUSE

A 6259H

Abstract: 63b46 spru074e 61B46 6290h 6259H 63cf 6250H 631E-6 61a0-61a1h
Contextual Info: TMS320x28xx, 28xxx DSP Enhanced Controller Area Network eCAN Reference Guide Literature Number: SPRU074E May 2002 − Revised October 2006 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any

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1351D

Abstract: FDPC8011 FDPC8011S
Contextual Info: PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.3 mΩ at VGS = 4.5 V, ID = 12 A dual package. The switch node has been internally connected to

1351D

Abstract: FDPC8011S FDPC8011
Contextual Info: PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel General Description „ Max rDS on = 7.3 mΩ at VGS = 4.5 V, ID = 12 A This device includes two specialized N-Channel MOSFETs in a Q2: N-Channel dual package. The switch node has been internally connected to

Contextual Info: HAMMOND ELECTRONICS LTD. 1 Onslow Close, Kingsland Business Park Basingstoke, Hampshire, RG24 8QL Tel: 01256 812 812 Fax: 01256 332 249 e-mail: sales@hammond-electronics.co.uk www.hammondmfg.com Euro Trade Price List Small Enclosures Transformers & Inductors

CS3020

Abstract: cbb22 527-01
Contextual Info: HAMMOND MANUFACTURING CO. LTD. 394 Edinburgh Road North Guelph, Ontario N1H 1E5 Tel: 519 822-2960 Fax: (519) 822-0715 www.hammondmfg.com Manufacturer’s Suggested Canadian Resale Pricing Transformers & Inductors Small Enclosures Outlet Strips Electrical Enclosures

FDPC8011

Abstract: FDPC8011S 1351D
Contextual Info: PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.3 mΩ at VGS = 4.5 V, ID = 12 A dual package. The switch node has been internally connected to

Contextual Info: PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 7.3 mΩ at VGS = 4.5 V, ID = 12 A dual package. The switch node has been internally connected to

1351D

Contextual Info: FDPC8012S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.0 mΩ at VGS = 4.5 V, ID = 12 A dual package. The switch node has been internally connected to

20kV thyristor

Abstract: 611C 600AA
Contextual Info: P.C .C. Board Mount Turns Primary Primary ET Inter. W Leakage D.C. Cir. Cat. No. Ratio +/- Inductance Constant V Capacity p.f. Inductance Resistance Dia. 2% uH min uS max. uH max. Ohms max. 600AA 1:1 2060 17.5 35 0.6 1.5 A 600BA 1:1 492 8.5 20 0.3 0.8 A

0/F28-F29

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