63 MARKING CODE DIODE Search Results

Contextual Info: SIEMENS BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type BAR BAR BAR BAR 63 63-04 63-05 63-06 Marking Ordering code tape and reel G3 G4

Contextual Info: SIEMENS BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4

transistor A1267

Abstract: A1268 a1267 Q62702-A1268 a1261 A1267 transistor Q62702-A1267 Q62702-A1261 VSO05561
Contextual Info: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W VSO05561 BAR 63-06W Type Marking Ordering Code Pin Configuration

BAR63

Abstract: Q62702-A1038 a1038 transistor BR diode A1038 BAR63-04 BAR64 Q62702-A1036 Q62702-A1037 Q62702-A1039
Contextual Info: BAR 63. Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4 G5 G6 Q62702-A1036

Contextual Info: S IE M E N S BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type BAR BAR BAR BAR 63 63-04 63-05 63-06 Marking Ordering code tape and reel

Contextual Info: SIEMENS BAR 63. W Silicon PIN Diode >PIN diode for high speed switching of RF signal »Low forward resistance >Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C1/C2 A1/A2 EL -0 - nr TJ nr nr Marking Ordering Code Pin Configuration

450KW

Contextual Info: BAT 63 Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol Values

Contextual Info: SIEMENS Silicon Schottky Diode BAT 63 • Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol

Marking Code FGs

Abstract: XS marking code marking 297
Contextual Info: SIEMENS Silicon Schottky Diode BAT 63 • Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 4 3 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol

ZERO Bias diode

Abstract: 04W06 bat17
Contextual Info: SIEMENS BAT 63-099R Silicon Schottky Diodes * Zero bias diode array for mixer and detectors up to GHz frequencies • Crossover ring quad Type Marking BAT 63-099F3SN Ordering Code Pin Configuration Package Q62702-A1105 1= A SO T-143 2=C Maximum Ratings Parameter

Contextual Info: SIEMENS BAR 63-02W Silicon PIN Diode • PIN diode for high speed switching of RF signals • Low forward resistance, small capacitance small inductance • Very low capacitance • For frequencies up to 3 GHz Type Marking Ordering Code Pin Configuration BAR 63-02W

zero bias diode

Abstract: diode ring mixer a1105 Q62702-A1105 BAT17-04 BAT17-04W BAT17W sot143 marking code 2c
Contextual Info: BAT 63-099R Silicon Schottky Diodes • Zero bias diode array for mixer and detectors up to GHz frequencies • Crossover ring quad Type Marking Ordering Code BAT 63-099RSN Q62702-A1105 Pin Configuration Package 1=A SOT-143 2=C Maximum Ratings Parameter Symbol

Contextual Info: SIEMENS BAR 63-03W Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type Marking Ordering Code tape and reel BAR 63-03W G Q62702-A1025 Pin Configuration

transistor marking codes a01

Abstract: Q62702-A1025 marking code js sod323 diode PIN diode for high speed switching of RF signals marking code js 3 pin diode
Contextual Info: BAR 63-03W Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type Marking Ordering Code tape and reel BAR 63-03W G Q62702-A1025 Pin Configuration Package 1 2

D1980

Abstract: 2sd darlington MARKING CODE f5 diode marking code 15h marking 7T transistor TRANSISTOR CD 263 2SD1980 2SD1980F5 damper diode darlington npn transistor t f5 j
Contextual Info: 2SD1980F5 Transistor, NPN, Darlington pair Features • available in CPT F5 SC-63 package • package marking: D1980-AQ, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) • damper diode is incorporated

Q62702-A1211

Contextual Info: BAR 63-02W Silicon PIN Diode • PIN diode for high speed switching 2 of RF signals • Low forward resistance, small capacitance small inductance • Very low capacitance 1 • For frequencies up to 3 GHz VES05991 Type Marking Ordering Code Pin Configuration

D1980

Abstract: diode marking F5
Contextual Info: 2SD1980F5 Transistor, NPN, Darlington pair Features Dimensions Units : mm • • available in CPT F5 (SC-63) package package marking: D1980*Q, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) damper diode is incorporated

B1316

Abstract: DIODE B1316 B-1316 2SB1316F5 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking
Contextual Info: 2SB1316F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1316-A-Q, where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) •

b1316

Abstract: B131-6
Contextual Info: Transistor, PNP, Darlington pair 2 S B 1 3 1 6 F 5 Features • available in CPT F5 SC-63 package • package marking: B1316*Q , where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated

DIODE S3V 63

Contextual Info: Axial Diode Single Diode Avalanche type • O U T L IN E D IM E N S IO N S D ‘ Cathode (D • Anode S3VDZ 7.5MAX 24MIN 600V 3.5A 24MIN II JLi o-— M Marking S3V □D _ Type No. (S4.8MAX -■0 x-inwH JiM i! ■ +1 63 / C olor code, Cathode band

Si5404BDC

Contextual Info: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code

Si5404BDC

Contextual Info: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code

Si5404BDC-T1-E3

Abstract: SI5404BDC
Contextual Info: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code

DIODE S3V

Abstract: DIODE S3V 40 DIODE S3V 63 S3V Diode DIODE S3V 7
Contextual Info: r c r — K A x ia l D lo d * Sinote DfecUp ^MytäsOB Avatanche ty « ^ O U T L IN E DIM ENSIONS Cathode Anode S3VDZ 04 .8 M A X 600V 3.5A Color code, Cathode band Blue : S3V60Z Marking 7'<7'svi.& zm S3V 63 ¡.fe Type No. • f-X x Avalanche type (Silver