|
622A014-3-0
|
|
TE Connectivity
|
Cables, Wires - Management - Heat Shrink Boots, Caps - STD POLY MOLDED PARTS |
Original |
PDF
|
204.71KB |
|
VS3622AS
|
|
VANGUARD
|
30V/15A N-Channel Advanced Power MOSFET with low on-resistance of 8.4 mΩ at VGS=10V and 12 mΩ at VGS=4.5V, available in SOP8 package, suitable for 5V logic level control applications. |
Original |
PDF
|
|
|
|
VS3622AA2
|
|
VANGUARD
|
30V/13A N-Channel Advanced Power MOSFET with low on-resistance of 8.8 mOhm at VGS=10V, 13 mOhm at VGS=4.5V, suitable for 5V logic level control and fast switching applications in a DFN2x2x0.45-6L package. |
Original |
PDF
|
|
|
|
VS3622AP
|
|
VANGUARD
|
30V/50A N-Channel Advanced Power MOSFET with 7.4 mΩ typical RDS(on) at VGS=10V, available in PDFN5x6 package, designed for high-efficiency power management applications requiring low on-resistance and high current capability. |
Original |
PDF
|
|
|
|
VS2622AE
|
|
VANGUARD
|
20V/56A N-Channel Advanced Power MOSFET with 4.8 mΩ typical RDS(on) at VGS=10V, 5.6 mΩ at VGS=4.5V, and 7.7 mΩ at VGS=2.5V, available in PDFN3333 package. |
Original |
PDF
|
|
|
|
VS3622AA4
|
|
VANGUARD
|
30V/9.2A N-Channel Advanced Power MOSFET with 8.7 mΩ RDS(on) at VGS=10V, available in DFN2x2x0.5-6L package, designed for fast switching and high efficiency applications. |
Original |
PDF
|
|
|
|
JMPL0622AK
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
P-Ch Power MOSFET with -60 V drain-to-source voltage, -46 A continuous drain current, 19.8 mΩ RDS(ON) at VGS = -10V, and 34 mΩ RDS(ON) at VGS = -4.5V in a TO-252-3L package. |
Original |
PDF
|
|
|
|
VS3622AA
|
|
VANGUARD
|
30V/13A N-Channel Advanced Power MOSFET with 8.8 mOhm RDS(on) at VGS=10V, 13 mOhm at VGS=4.5V, available in DFN2x2x0.75-6L package, suitable for 5V logic level control and fast switching applications. |
Original |
PDF
|
|
|
|
VS3622AD
|
|
VANGUARD
|
30V/55A N-Channel Advanced Power MOSFET with low on-resistance of 8 mΩ at VGS=10V, available in TO-252 package, suitable for 5V logic level control and high-efficiency power switching applications. |
Original |
PDF
|
|
|
|
VS2622AL
|
|
VANGUARD
|
20V/8A N-Channel Advanced Power MOSFET with 11 mΩ typical RDS(on) at VGS=10V, logic level compatible, low on-resistance, fast switching, and SOT23-3L package. |
Original |
PDF
|
|
|
|
VS3622AE
|
|
VANGUARD
|
30V/45A N-Channel Advanced Power MOSFET with 7.9 mΩ RDS(on) at VGS=10V, 12 mΩ at VGS=4.5V, available in PDFN3333 package, suitable for logic-level drive applications. |
Original |
PDF
|
|
|
|
VS2622AD
|
|
VANGUARD
|
20V/60A N-Channel Advanced Power MOSFET with 6.5 mΩ typical RDS(on) at VGS=4.5V, TO-252 package, designed for high efficiency and fast switching applications. |
Original |
PDF
|
|
|
|
VS2622AA
|
|
VANGUARD
|
20V/13A N-Channel Advanced Power MOSFET with 8.2 mΩ RDS(on) at VGS=4.5V, 10 mΩ at VGS=2.5V, in DFN2x2x0.75-6L package, suitable for logic level control and fast switching applications. |
Original |
PDF
|
|
|
VS3622AS
