6200M Search Results

Contextual Info: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS8030T1R0NJGJV Features Item Summary 1.0 H(±30%), 7800mA, 6200mA Lifecycle Stage

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS8030T1R5NJGJ Features Item Summary 1.5 H(±30%), 6200mA, 5300mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions

Contextual Info: Voltage Controlled Oscillators MW500-1707 4200MHz to 6200MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 4200MHz to 6200MHz 0/20 V 2 +/- 2 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -80 typ dBc/Hz

MW500-1358

Abstract: anritsu power
Contextual Info: Voltage Controlled Oscillators MW500-1358 5300MHz to 6200MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 5300MHz to 6200MHz 0/16 V 1 +/- 3 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -90 typ dBc/Hz

NRS8030T

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS8030T1R5NJGJ Features Item Summary 1.5 H(±30%), 6200mA, 5300mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS8030T1R0NJGJV Features Item Summary 1.0 H(±30%), 7800mA, 6200mA Lifecycle Stage

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS8030T1R0NJGJ Features Item Summary 1.0 H(±30%), 7800mA, 6200mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions

Contextual Info: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz

FLM4450-25D

Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA
Contextual Info: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q

RTL8201 reference Design

Abstract: RTL8201 Design RTL8201 W3100A rtl8201 application note W3100 RTL8201 DATASHEET diode byt 45 realtek ethernet RCR RTL8201 w3100a Design
Contextual Info: iinChip W3100A www.WIZnet.co.kr Technical Datasheet v1.34 „ Description „ Features The iinChip W3100A is an LSI of hardware protocol stack that provides an easy, low-cost solution „ Description Features by„allowing simple installation of TCP/IP stack in the

WED3DG7237V-D2

Contextual Info: WED3DG7237V-D2 256MB- 32Mx72 SDRAM UNBUFFERED FEATURES DESCRIPTION n Burst Mode Operation The WED3DG7237V is a 32Mx72 synchronous DRAM module which consists of nine 32Mx 8 SDRAM components in TSOP- 11 package, and one 2K EEPROM in an 8- pin TSSOP package for

WED3DG728V-D2

Contextual Info: WED3DG728V-D2 64MB- 8Mx72 SDRAM W/ PLL, REGISTER AND SPD FEATURES DESCRIPTION n Burst Mode Operation The WED3DG728V is a 8Mx72 synchronous DRAM module which consists of nine 8Meg x 8 SDRAM components in TSOP11 package, two 18- bit Drive ICs for input control signal and one

WED3DG72128V-D2

Abstract: PLL 566
Contextual Info: WED3DG72128V-D2 1GB- 128Mx72 SDRAM W/ PLL, REGISTER AND SPD FEATURES DESCRIPTION n Burst Mode Operation The WED3DG72128V is a 128Mx72 synchronous DRAM module which consists of eighteen 128Mx4 stack SDRAM components in TSOP- 11 package, two 18- bit Drive ICs for input control signal

Contextual Info: WED3DG649V-D1 64MB- 8Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION n Burst Mode Operation The WED3DG649V is a 8Mx64 synchronous DRAM module which consists of four 8Meg x 16 SDRAM components in TSOP11 package, and one 2K EEPROM in an 8- pin TSSOP package for Serial Presence Detect which are mounted on a 144 Pin SODIMM multilayer FR4 Substrate.

WED3DG6416V-D2

Contextual Info: WED3DG6416V-D2 128MB- 16Mx64 SDRAM UNBUFFERED FEATURES DESCRIPTION n PC100 and PC133 compatible The WED3DG6416V is a 16Mx64 synchronous DRAM module which consists of eight 8Mx16 SDRAM components in TSOP- 11 package and one 2K EEPROM in an 8- pin TSSOP package for

WED3DG6463V-D2

Contextual Info: WED3DG6463V-D2 512MB- 64Mx64 SDRAM UNBUFFERED FEATURES DESCRIPTION n Burst Mode Operation The WED3DG6463V is a 64Mx64 synchronous DRAM module which consists of sixteen 32Mx8 SDRAM components in TSOP11 package and one 2K EEPROM in an 8- pin TSSOP package for

telemecanique contactor catalogue

Abstract: telemecanique star delta starter bs88 zs levels HRC fuse gg GEC BS88-2 15KW motor telemecanique star delta starter table NIT16 gec mte axto overload BS88 fuse curve hbc
Contextual Info: Issued March 1997 232-3608 Data Pack B Data Sheet BS88 HBC Fuselinks, type T HBC* fuselinks ASTA* certified to BS88: Part 2: 1975, suitable for general purpose industrial applications eg. heating and lighting circuits and for short circuit protection of motor control circuits.

telemecanique contactor catalogue

Abstract: telemecanique star delta starter HRC fuse gg GEC bs88 zs levels mte axto overload NIT16 gec gec switchgear TIA32 mte max0 TIS63M80 curve
Contextual Info: Issued March 1992 012-659 Data Pack B Data Sheet BS88 HBC Fuselinks, type T HBC* fuselinks ASTA* certified to BS88: Part 2: 1975, suitable for general purpose industrial applications eg. heating and lighting circuits and for short circuit protection of motor control circuits.

WED3DG644V10D1

Abstract: BA1A11
Contextual Info: WED3DG644V-D1 White Electronic Designs 32MB- 4Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION n Burst Mode Operation n Auto and Self Refresh capability n LVTTL compatible inputs and outputs n Serial Presence Detect with EEPROM n Fully synchronous: All signals are registered on

IDT5V99

Contextual Info: Frequently Asked Questions about the TurboClock II Family Since the introduction of the TurboClock II family, we have encountered some of the following frequently asked questions by customers. Below are answers to these questions. 1. What’re the differences between different part numbers?

Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ04024N3H-E Features Item Summary 4.3nH(±3%), 230mA, 8, 01005 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 40000pcs

Contextual Info: WED3DG72126V-D2 1GB-128Mx72,SDRAM UNBUFFERED FEATURES DESCRIPTION n Burst Mode Operation The WED3DG72126V is organized as a 128Mx72 synchronous DRAM module which consists of eighteen 64Mx8 stack SDRAM components in TSOP- 11 package, and one 2K EEPROM in an 8pin TSSOP package for Serial Presence Detect which are mounted

Contextual Info: WED3DG7266V-D1 512MB- 64Mx72 SDRAM, UNBUFFERED W/PLL FEATURES DESCRIPTION n Burst Mode Operation The WED3DG7266V is a 64Mx72 synchronous DRAM module which consists of nine 64Mx8 SDRAM components in TSOP- 11 package, and one 2K EEPROM in an 8- pin TSSOP package for

Contextual Info: WED3DG6466V-D1 512MB- 64Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION n PC100 and PC133 compatible The WED3DG6466V is a 64Mx64 synchronous DRAM module which consists of eight 64Mx8 SDRAM components in TSOP- 11 package, and one 2K EEPROM in an 8- pin TSSOP package for