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620A608G
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Bomar Interconnect Products
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Coaxial Connectors (RF), Connectors, Interconnects, MINI UHF CABLE JACK FOR RG59/62 |
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3 |
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620AK-06LF
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Integrated Device Technology
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Integrated Circuits (ICs) - Clock/Timing - Clock Generators, PLLs, Frequency Synthesizers - IC CLOCK SYNTHESIZER PDA 32-QFN |
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171.82KB |
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620AK-06LFT
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Integrated Device Technology
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Integrated Circuits (ICs) - Clock/Timing - Clock Generators, PLLs, Frequency Synthesizers - IC CLOCK SYNTHESIZER PDA 32-QFN |
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171.82KB |
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JMSL0620AGDEQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V, 23 A dual N-channel power MOSFET in PDFN5x6-8L-D package with typical RDS(ON) of 18 mΩ at VGS = 10 V and 25 mΩ at VGS = 4.5 V, featuring low gate charge and AEC-Q101 qualification for automotive applications. |
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JCT620A-FO
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Jiangsu JieJie Microelectronics Co Ltd
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20A SCRs with 600V repetitive peak off-state and reverse voltage, high dv/dt rate, insulated TO-220A or non-insulated TO-220C package, suitable for solid state relays, power chargers, and motor controls. |
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JMSL0620AGE
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in PDFN5x6-8L package with 16 mΩ typical RDS(ON) at VGS = 10V, 31A continuous drain current, low gate charge, and ESD-protected gate. |
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JMSL0620AGEQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-Ch Power MOSFET with 16.0 mΩ RDS(ON) at VGS = 10V, 32 A continuous drain current, low gate charge, and PDFN5x6-8L package for automotive applications. |
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COS620ARZ
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Cosine
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36V精密仪器放大器，1CH，4.5V-36V，1.5MHz，125uV(Max.)，1.0mA |
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JMSL0620AGDE
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Jiangsu JieJie Microelectronics Co Ltd
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60 V dual N-channel power MOSFET in PDFN5x6-8L-D package with typical RDS(ON) of 18 mΩ at VGS = 10 V, 25 mΩ at VGS = 4.5 V, and maximum continuous drain current of 23 A at 25°C. |
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JCT620A
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Jiangsu JieJie Microelectronics Co Ltd
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20 A SCR with 600 V repetitive peak off-state and reverse voltage, 2500 V RMS insulation rating, high dV/dt immunity, suitable for solid state relays, power chargers, and motor controls in TO-220A package. |
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JMSL0620AUE
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Jiangsu JieJie Microelectronics Co Ltd
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60V 24A N-channel Power MOSFET in PDFN3x3-8L package with 16mΩ typical RDS(ON) at VGS = 10V, low gate charge, and 1.1kV HBM ESD protection. |
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JMSL0620AGDEQ
