620 TG Search Results

Contextual Info: 5STF 06D2640 5STF 06D2640 Old part no. TR 907F-620-26 Medium Frequency Thyristor Properties § Amplifying gate § High operational capability § Optimized turn-on and turn-off parameters § High operating frequency Applications § Power switching applications

5STF06T2640

Contextual Info: 5STF 06T2640 5STF 06T2640 Old part no. TR 907FC-620-26 Medium Frequency Thyristor Properties § Amplifying gate § High operational capability § Optimized turn-on and turn-off parameters § High operating frequency Applications § Power switching applications

5STF06T2440

Abstract: ABB czech republic 06T2440
Contextual Info: 5STF 06T2440  5STF 06T2440 Old part no. TR 907FC-620-24 Medium Frequency Thyristor Properties • Amplifying gate • High operational capability  Optimized turn-on and turn-off parameters  High operating frequency Applications  Power switching applications

FLD150F1CJ

Abstract: thermoelectric fld150
Contextual Info: FLD 150F1CJ FEATURES • Bit rate capability to 620 Mb/s • Span to 100 Km • Narrow spectral width due to distributed feed-back DFB type structure • Hermetically sealed 14 pin dual-in-line package with monitor photodiode, thermoelectric cooler, thermistor

MC14522

Abstract: MC14522B MC14568B MC14526B MC14011 MC14569B MC14XXXBCL MC14XXXBCP MC14XXXBD motorola ar254
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14568B Phase Comparator and Programmable Counters L SUFFIX CERAMIC CASE 620 The MC14568B consists of a phase comparator, a divide–by–4, 16, 64 or 100 counter and a programmable divide–by–N 4–bit binary counter all

5STF06D2440

Abstract: ABB thyristor 5 907F6
Contextual Info: 5STF 06D2440  5STF 06D2440 Old part no. TR 907F-620-24 Medium Frequency Thyristor Properties • Amplifying gate • High operational capability  Optimized turn-on and turn-off parameters  High operating frequency Applications  Power switching applications

lta 301

Abstract: 3040P MBR30200PT 3020P 3045P MBR3020PT S3050P
Contextual Info: MBR3020PT~MBR30200PT 30 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 200 Volts CURRENT TO-3P 30 Amperes Unit: inch mm FEATURES .640(16.25) .620(15.75) .199(5.05) .175(4.45) .087(2.2) .070(1.8) .600(15.25) .580(14.75) • Metal silicon junction, majority carrier conduction

uss-620

Contextual Info: Advance Data Sheet, Rev. 4 October 1997 microelectronics group Lucent Technologies Bell Labs Innovations USS-620 USB Device Controller with DMA Bridge Features 5 V tolerant I/O buffers allows operation in 3 V or 5 V system environment • Full compliance with the Universal Serial Bus

1e6e

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 1M Late Write 2.5 Vl/O MCM69R538 MCM69R620 The MCM69R538/620 is a 1 megabit synchronous late write fast static RAM designed to provide high performance in secondary cache, ATM switch, Telecom, and other high speed memory applications. The M CM 69R620

DBMM25PM

Abstract: DBMM25SZ DEMM9PM DEMM9PE DAMM15SM DBM25SM DCMM37SM DDM50PF179A DCMM37SZ DDM50SZ
Contextual Info: H igh Reliability, Military D Subm iniature, Sc N on-M agnetic/N o-O utgas S o ld er Cup C rim p See page 333 (See page 334-335) P rin ted C ircuit Performance and Material Specifications MATERIALS AND FINISHES Standard Material Steel per ASTM A-620 Shell

Contextual Info: PRELIMINARY PRM P045F048T17AL V•I Chip – PRM-AL Pre-Regulator Module TM • 45 V input V•I Chip PRM • Adaptive Loop feedback • Vin range 38 – 55 Vdc • ZVS buck-boost regulator • High density – 620 • 1.42 MHz switching frequency W/in3

5962-0622906

Abstract: 5962R0622906VYC 5962-0622906QYC 7842B 5962-0622906VYC AT68166H-18
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)

620 tg diode

Contextual Info: Silicon Variable Capacitance Diode BB 620 • For Hyperband TV/VTR tuners, Bd I Type Marking B B red S 6 2 0 Ordering Code tape and reel Pin Configuration Package1) 3 2 o - « - o Q 6 2 7 0 2 -B 4 0 3 S O D - 1 2 3 EHM0001 Maximum Ratings

MC14163

Contextual Info: g MC14160B M O TO R O LA MC14161B MC14162B MC14163B CMOS MSI SYNCHRONOUS PRESETTABLE 4-BIT COUNTERS L SU FFIX CERAMIC CASE 620 The MC14160B — MC14163B are synchronous programmable counters constructed w ith com plem entary MOS P-Channel and N-Channei enhancement mode devices in a single m o n o lith ic struc­

5962-0622906QYC

Abstract: 5962R0622906VYC AT68166
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)

AT68166H-YS18SR

Abstract: AT697E at68
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)

MBR0540

Contextual Info: MBR0540 F = /M R C H II_ D S E M IC O N D U C T O R ^ MBR0540 Features 1.2 2 mm E -W H • 1.0 Ampere; forward voltage less than 620 mv. 4ft ¡nils o 071 n.aoiyi 0.055 1.400 IBS mite • 400 milliwat Power Dissipation package. SOD-123 LAND PADS ii 112f2as<n

5962R0622908VXC

Abstract: AT68166H 5962-0622908QXC 5962R0622906VYC 5962-0622906QYC AT68166H-YM20-E 7842C AT68166H-YS18-E 5962-0622906VYC
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)

at68166f

Abstract: MQFP68 5962-06229 AT60142F AT60142FT
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns, 18 ns for AT68166F Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)

AT68166F-20

Abstract: AT697E AT68166F-YS18-E MQFPT68 5962-06229 AT60142F AT60142FT AT68166F smd a10 5962R0622904VYC
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns, 18 ns for AT68166F Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)

620 tg diode

Abstract: 30V30
Contextual Info: Silicon Tuning Diode BB 620 • For Hyperband TV/VTR tuners. Bd I Type BB620 Ordering code Q 6 2 7 0 2 -B 4 0 3 Marking red/S M axim um ratings Vr h To, ^»tg S iem ens 30 20 -55.+125 -55.+150 V mA °C °C o o Reverse voltage Forward current Operating temperature range

semikron skiip 792

Contextual Info: s e MIKRO n SKiiP 792 GB 170 - 370 WT/FT Absolute Maximum Ratings Sym bol Values Units 1700 1200 750 1500 - 5 5 . . . + 150 4000 620 1500 6480 210 V V A A °C V A A A kA2s 18 30 75 - 25 0 . . . + 85(70) V V kV/ns °C | C o n d itio n s 1> IGBT & Inve rse Diode

mc14522

Abstract: MC14522B MC14526B MC14XXXBCL MC14XXXBCP MC14XXXBDW
Contextual Info: g MC14522B MC14526B M O T O R O L A L SUFFIX P R E S E T T A B L E 4 -B IT D O W N C O U N T E R S CERAMIC CASE 620 The MC14522B BCD counter and the MC14526B binary counter are constructed with MOS P-channel and N-channel enhancement mode devices in a m onolithic structure.

Contextual Info: MOTOROLA H SE M IC O N D U C TO R TECHNICAL DATA MC54/74HC4543 BCD-to-Seven-Segm ent Latch/ Decoder/Display Driver for LCDs J SUFFIX CERAMIC CASE 620-09 High-Performance Silicon-Gate CMOS T he M C 54/74H C 45 43 is c o m p a tib le in both fu n c tio n and p in o u t w ith the