620 DIODE Search Results

3N62K3

Abstract: 3N62 STB3N62K3 STP3N62K3 STU3N62K3 STD3N62K3 STF3N62K3
Contextual Info: STB3N62K3, STD3N62K3, STF3N62K3 STP3N62K3, STU3N62K3 N-channel 620 V, 2.2 Ω , 2.7 A SuperMESH3 Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK Features Type STB3N62K3 STD3N62K3 STF3N62K3 STP3N62K3 STU3N62K3 VDSS RDS on max ID PD 620 V 620 V 620 V 620 V

7N52DK3

Contextual Info: STD7N52DK3 STF7N52DK3, STP7N52DK3 N-channel 620 V, 0.98 Ω, 6.2 A, DPAK, TO-220FP, TO-220 SuperFREDmesh3 Power MOSFET Preliminary data Features Type VDSS RDS on max ID Pw 3 1 STD7N52DK3 STF7N52DK3 STP7N52DK3 620 V 620 V 620 V < 1.15 Ω < 1.15 Ω < 1.15 Ω

620 diode

Abstract: marking bd SOd123 CT28 Q62702-B403 DIODE MARKING CODE BD
Contextual Info: BB 620 Silicon Variable Capacitance Diode ● BB 620 For Hyperband TV/VTR tuners, Bd I Type Marking Ordering Code tape and reel BB 620 red S Q62702-B403 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 30

DBC3

Abstract: IB 6401 OPA620KP
Contextual Info: OPA 620 OPA620 OPA 620 OPA 620 Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 2.3nV/√Hz ● LOW NOISE PREAMPLIFIER ● HIGH OUTPUT CURRENT: 100mA ● FAST SETTLING: 25ns 0.01% ● GAIN-BANDWIDTH PRODUCT: 200MHz ● LOW NOISE DIFFERENTIAL AMPLIFIER

tsha 6203

Abstract: TSHA520 TSHA6200 TSHA6201 TSHA6202 TSHA6203
Contextual Info: TELEFUNKEN Semiconductors TSHA 620. GaAlAs Infrared Emitting Diode in ø 5 mm T–1¾ Package Description The TSHA 620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

6N62K3

Abstract: 6N62K STP6N62K3 STD6N62K3 STF6N62K3 STU6N62K3 Marking STMicroelectronics zener diode STI6N62K3 Zener Diode ST 41 STP6N6
Contextual Info: STD6N62K3, STF6N62K3 STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 Ω, 5.5 A SuperMESH3 Power MOSFET in IPAK, DPAK, TO-220,TO-220FP, I²PAK Features Order codes STD6N62K3 STF6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 • VDSS 620 V RDS on max. < 1.2 Ω

18452

Abstract: 3LN62K3 STU3LN62K3
Contextual Info: STD3LN62K3, STF3LN62K3 STP3LN62K3, STU3LN62K3 N-channel 620 V, 2.5 Ω , 2.5 A SuperMESH3 Power MOSFET DPAK, TO-220FP, TO-220, IPAK Features Order codes STD3LN62K3 STF3LN62K3 STP3LN62K3 STU3LN62K3 VDSS 620 V RDS on max ID PD <3Ω 2.5 A 2.5 A(1) 2.5 A

Contextual Info: User's Guide SLVU433 – February 2011 TPS53128EVM-620 The TPS53128EVM-620 Evaluation Module presents an easy-to-use reference design for a common dual output power supply using the TPS53128 controller in cost sensitive applications. 1 2 3 4 5 6 7 8 9 Contents

diode 1334

Abstract: G 1754 diode 1334 diode KBPC3027 KBPC3047 KBPC3067 VK227 VK247 VK267
Contextual Info: 30 Amp Avalanche Bridges KBPC3027 - KBPC3067 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D E G H J _ 1.140 .452 .490 .732 .677 -.425 .693 .620 .188 .620 .525 29.00 11.50 12.45 18.60 17.20 -17.10 14.80 1.14 10.80 17.54 15.75

STD4N62K3

Abstract: 4n62k
Contextual Info: STB4N62K3, STD4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFETs in D²PAK and DPAK packages Datasheet - production data Features Order codes VDS RDS on max. ID PW 620 V 2Ω 3.8 A 70 W STB4N62K3 TAB STD4N62K3 TAB • 100% avalanche tested

Contextual Info: SIEMENS ILD620/620GB QUAD CHANNEL ILQ620/620GB DUAL CHANNEL AC INPUT PHOTOTRANSISTOR OPTOCOUPLER FEA TU R ES • Identical Channel to Channel Footprint ILD620 C rosses to TL P 620-2 ILQ620 C rosses to T LP 620-4 • Current Transfer Ratio CTR at lp= ± 5 mA

6N62K

Abstract: 6n62 6N62K3 STB6N62K3 diode ZENER A1 STD6N62K3
Contextual Info: STB6N62K3 STD6N62K3 N-channel 620 V, 0.95 Ω, 5.5 A SuperMESH3 Power MOSFET in D²PAK, DPAK Features Order codes VDSS RDS on max. ID Pw STB6N62K3 STD6N62K3 620 V < 1.2 Ω 5.5 A 90 W TAB TAB 3 100% avalanche tested • Extremely high dv/dt capability ■

6N62K

Contextual Info: STF6N62K3, STI6N62K3 STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 Ω, 5.5 A SuperMESH3 Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK Features Order codes TAB VDSS RDS on max. ID Pw 5.5 A 30 W 90 W 90 W 90 W 3 STF6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 620 V

STD5N62K3

Abstract: 5N62K3 schematic diagram of energy saving device STF5N62K3 Date Code Marking STMicroelectronics STP5N62K3 ZENER DIODE 5N62
Contextual Info: STD5N62K3, STF5N62K3 STP5N62K3 N-channel 620 V, 1.28 Ω, 4.3 A, DPAK, TO-220, TO-220FP SuperMESH3 Power MOSFET Preliminary data Features Type VDSS RDS on max ID Pw STD5N62K3 STF5N62K3 70 W 620 V < 1.6 Ω 4.3 A 25 W STP5N62K3 3 1 70 W 2 TO-220FP 3 •

Contextual Info: STBLED627, STDLED627 N-channel 620 V, 0.95 Ω, 7.0 A Power MOSFET in D2PAK and in DPAK Datasheet - production data Features TAB Order codes TAB STBLED627 3 1 3 STDLED627 DPAK 1 VDSS RDS on max. ID Pw 620 V < 1.2 Ω 7.0 A 90 W • 100% avalanche tested D²PAK

Contextual Info: STFILED627, STPLED627 N-channel 620 V, 0.95 Ω typ., 7.0 A Power MOSFET in I²PAKFP and TO-220 Datasheet - production data Features TAB Order codes STFILED627 STPLED627 3 1 2 1 2 620 V < 1.2 Ω ID PTOT 7.0 A 30 W 3 • 100% avalanche tested I²PAKFP TO-220

Contextual Info: STDLED625, STULED625 N-channel 620 V, 1.28 Ω typ., 5.0 A Power MOSFET in DPAK and IPAK Datasheet − production data Features Order codes STDLED625 STULED625 VDS RDS on max. ID 620 V 1.6 Ω 5.0 A PTOT 25 W 70 W 3 3 2 • 100% avalanche tested 1 1 DPAK IPAK

369D

Abstract: A114 JESD22 221D
Contextual Info: NDF04N62Z, NDP04N62Z, NDD04N62Z N-Channel Power MOSFET 620 V, 1.8 W Features • • • • http://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant VDSS RDS ON (TYP) @ 2 A 620 V 1.8 Ω ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Contextual Info: STDLED625H N-channel 620 V, 1.7 Ω, 4.5 A Power MOSFET in a DPAK package Datasheet − preliminary data Features TAB Order code VDS RDS on max ID PTOT STDLED625H 620 V 2Ω 4.5 A 70 W • 100% avalanche tested 3 • Extremely high dv/dt capability 1 • Gate charge minimized

6N62K3

Abstract: STF6N62K3-H
Contextual Info: STF6N62K3-H N-channel 620 V, 1.1 Ω, 5.5 A, TO-220FP SuperMESH3 Power MOSFET Features Type VDSS RDS on max STF6N62K3-H 620 V < 1.28 Ω 5.5 A(1) ID Pw 25 W 1. Limited by package 3 • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized

diode ED 35

Abstract: 620 diode control valve diode DD620 diode ED 21 DIODE ED
Contextual Info: DD.620 AC/D C M A IN S DOUBLE DIODE RA TIN G . H eater Voltage . Heater C u rre n t amps. . Maximum Rectified C u rre n t (m A )

Contextual Info: 5SDF 06D3004 5SDF 06D3004 Old part no. DM 827-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000

1N5711UR-1

Abstract: JANTX, JX, JAN JANTX, JX, JAN, Schottky 1N5712UR-1 1N6857UR-1 1N6858UR-1 CDLL2810 CDLL5711 CDLL5712 CDLL6263
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com SCHOTTKY BARRIER DIODES – LEADLESS PACKAGE FOR SURFACE MOUNT – METALLURGICALLY BONDED – DOUBLE PLUG CONSTRUCTION

1N458

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com SWITCHING DIODE – METALLURGICALLY BONDED – HERMETICALLY SEALED – DOUBLE PLUG CONSTRUCTION Qualified per MIL-PRF-19500/193