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620GB
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Vishay
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Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel) |
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139.81KB |
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VS3620GEMC
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VANGUARD
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30V/40A N-Channel Advanced Power MOSFET with 4.9 mΩ typical RDS(on) at VGS=10V, available in PDFN3333 package, designed for high efficiency and fast switching applications. |
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RA21620G02GA
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JWD
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RoHS compliant 1x2 tab-down ICMs for CAT 5/6 UTP cables, rated 260°C peak wave solder, 1500Vrms isolation, with insertion loss -1.0dB, return loss -10dB, crosstalk -30dB, CMRR -30dB, and PoE non-rated options. |
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VS4620GD
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VANGUARD
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40V/29A N-Channel Advanced Power MOSFET with 7.6 mΩ RDS(on) at VGS=10V, TO-252 package, optimized for low switching losses and 100% avalanche tested. |
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VS4620GP
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VANGUARD
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40V/40A N-Channel Advanced Power MOSFET in PDFN5x6 package, with RDS(on) of 6.5 mOhm at VGS=10V, featuring high current capability, low on-resistance, and optimized for power management applications. |
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VS4620GEMC
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VANGUARD
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40V/36A N-Channel Advanced Power MOSFET with 6.4 mΩ RDS(on) at VGS=10V, 10 mΩ at VGS=4.5V, 54A silicon-limited current, and 30W power dissipation in a PDFN3333 package. |
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VS3620GPMC
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VANGUARD
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30V/36A N-Channel Advanced Power MOSFET with 5.4 mΩ typical RDS(on) at VGS=10V, available in PDFN5x6 package, designed for high efficiency and fast switching applications. |
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VS4620GS
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VANGUARD
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40V/11A N-Channel Advanced Power MOSFET in SOP8 package with RDS(on) of 7.3 mΩ at VGS=10V, featuring fast switching, high efficiency, and 100% avalanche tested performance. |
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VS3620GA
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VANGUARD
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30V/23A N-Channel Advanced Power MOSFET with 5.7 mΩ RDS(on) at VGS=10V, 8.8 mΩ at VGS=4.5V, DFN2x2x0.75-6L package, silicon limited ID of 55A, and maximum junction temperature of 150°C. |
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VS4620GI
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VANGUARD
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40V/29A N-Channel Advanced Power MOSFET with RDS(on) of 7.6 mΩ at VGS=10V, available in TO-251 package, featuring optimized gate charge and 100% avalanche tested. |
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VS3620GEMC
