62 DIODE Search Results

IXYS VUO 30

Abstract: ixys vuo 52 E72873 6212N
Contextual Info: VUO 62 VUO 82 IdAV = 63/88 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 600 800 1200 1400 1600 1800 600 800 1200 1400 1600 1800 Symbol ~ VUO 62-06NO7 VUO 62-08NO7 VUO 62-12NO7 VUO 62-14NO7 VUO 62-16NO7 VUO 62-18NO7* ~ ~ + Type ~ ~ ~ VUO 82-06NO7

IXYS VUO 30

Contextual Info: VUO 62 VUO 82 IdAV = 63/88 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 600 800 1200 1400 1600 1800 600 800 1200 1400 1600 1800 Symbol ~ VUO 62-06NO7 VUO 62-08NO7 VUO 62-12NO7 VUO 62-14NO7 VUO 62-16NO7 VUO 62-18NO7* ~ ~ + Type ~ ~ ~ VUO 82-06NO7

62-16NO7

Abstract: 6208N
Contextual Info: Three Phase Rectifier Bridges VUO 62 IdAV VRRM = 63 A = 800 - 1800 V Preliminary data VRSM VRRM V V 800 1200 1400 1600 1800 800 1200 1400 1600 1800 - Type ~~ ~ + ~ ~ ~ VUO 62-08NO7 VUO 62-12NO7 VUO 62-14NO7 VUO 62-16NO7 VUO 62-18NO7* - + * delivery time on request

Contextual Info: VUO 62 VUO 82 IdAV = 63/88 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRRM V VRSM V 800 1200 1400 1600 1800 900 1300 1500 1700 1900 ~ ~ ~ + Type VUO 62-08NO7 VUO 62-12NO7 VUO 62-14NO7 VUO 62-16NO7 VUO 62-18NO7* ~ ~ ~ VUO 82-08NO7 VUO 82-12NO7 VUO 82-14NO7

vuo 125

Abstract: E72873 8212N 62-16NO7
Contextual Info: VUO 62 VUO 82 IdAV = 63/88 A VRRM = 800-1800 V Three Phase Rectifier Bridge ~ ~ ~ + VRRM V VRSM V Type 800 1200 1400 1600 1800 900 1300 1500 1700 1900 VUO 62-08NO7 VUO 62-12NO7 VUO 62-14NO7 VUO 62-16NO7 VUO 62-18NO7* ~ ~ ~ VUO 82-08NO7 VUO 82-12NO7 VUO 82-14NO7

Contextual Info: nixYS VUO 62 IdAV Three Phase Rectifier Bridges v RSM v FIRM V V 800 1200 1400 1600 1800 800 1200 1400 1600 1800 V RRM Type J VUO VUO VUO VUO VUO Î1 1 l- n - 62-08N 07 62-12 N 0 7 62-14 N 0 7 62-16 N 0 7 62-18 N 0 7 * = 63 A = 8 00-1800 V 1 * delivery time on request

diode rectifier siemens

Contextual Info: SIEMENS BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies ESD: Electrostatic discharge sensitive device, observe handling precaution BAT 62-02W L 1 =C Q62702-A1028 h Pin Configuration < Marking Ordering Code CM Type

Contextual Info: MMO 62 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 54 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 62-12io6 MMO 62-16io6 K2/A1 G2 G2 K1/A2 Test Conditions IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module

IGD 001

Contextual Info: MMO 62 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 54 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 62-12io6 MMO 62-16io6 K2/A1 G2 G2 K1/A2 Test Conditions IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module

OPA2662

Abstract: BUF601 2N3906 74HC237 OPA2662AP OPA2662AU OPA602 ota amplifier
Contextual Info: OP A26 62 OPA2662 OP A26 62 Wide-Bandwidth, Dual Power OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution

Contextual Info: LM1971 LM1971 Overture Audio Attenuator Series Digitally Controlled 62 dB Audio Attenuator with/Mute Literature Number: SNAS104A LM1971Overture Audio Attenuator Series Digitally Controlled 62 dB Audio Attenuator with/Mute General Description The LM1971 is a digitally controlled single channel audio

Contextual Info: FDB13AN06A0 N-Channel PowerTrench MOSFET 60 V, 62 A, 13.5 mΩ Features Applications • rDS on = 11.5 mΩ ( Typ.) @ VGS = 10 V, ID = 62 A • Motor Load Control • Qg(tot) = 22 nC ( Typ.) @ VGS = 10 V • DC-DC converters and Off-line UPS • Low Miller Charge

Contextual Info: FDB13AN06A0 N-Channel PowerTrench MOSFET 60 V, 62 A, 13.5 mΩ Features Applications • rDS on = 11.5 mΩ ( Typ.) @ VGS = 10 V, ID = 62 A • Motor Load Control • Qg(tot) = 22 nC ( Typ.) @ VGS = 10 V • DC-DC converters and Off-line UPS • Low Miller Charge

Contextual Info: FDS89141 Dual N-Channel PowerTrench MOSFET 100 V, 3.5 A, 62 mΩ Features General Description ̈ Max rDS on = 62 mΩ at VGS = 10 V, ID = 3.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has ̈ Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A

Contextual Info: SK60GB128 ! " +, -&        Absolute Maximum Ratings Symbol Conditions IGBT %. !/ " +, -  !/ " 1+, - )89 IGBT Module SK60GB128  1+22 % 34 5 ! " 62 - 77 5 122 5 ; +2 % !/ " 1+, - 12 ? ! " +, - ,A 5 ! " 62 - 46 5 )89" +  )

MC 9080

Abstract: klystron 2k25 2K25 2K45 reflex klystron klystron klystron 2k25 jan 2K25 klystron Bendix 6116 BENDIX reflex klystron
Contextual Info: File Catalog: Electron Tube Products Section: Microwave Tubes 6116 '*‘T&n<fpSType TK-62 REFLEX KLYSTRON T H E R M A LLY T U N E D DESCRIPTION The 6 1 1 6 (Bendix Type T K -62 ) tube is a ru g g e d iz e d low v o lta g e therm ally tuned X -b a n d reflex klystron, d e ­

Contextual Info: SK 60GM123  *+ ,-        Absolute Maximum Ratings Symbol Conditions IGBT ./# (0 ) *+ , $ (0 ) 1*+ , $78  1*22 . 32 4 ( ) 52 , 62 4 122 4 : *2 . (0 ) 1*+ , 12 > ( ) *+ , 32 4 ( ) 52 , 62 4 122 4 $78) *  $ SEMITOP 2

colour code diode zener

Abstract: alternator rectifier diode 50a colour code zener zener alternator rectifier alternator rectifier bzv64 zener colour code Zener Diode colour
Contextual Info: BZV63 / BZV64 Silicon Power Zener Diode Part no. Description The BZV63/62 are hermetically sealed 50Aforward current diodes, which are available in different Zener voltages. Features Applications Forward current 50A Power supplies Zener voltages 22V, 27V, 33V or 39V

laser diode bare chip

Abstract: 808nm
Contextual Info: 808nm 0.5W CW Laser Diode Preliminary Data L8933-62 FEATURES: High output power & high brightness 0.5W CW Output Power 50 m x 1μm Emitting Area Peak Emission Wavelength 808nm +/- 10nm Multimode High Stability Long Life Compact APPLICATIONS: Unit:mm Printing

Contextual Info: Photoelectric sensors FHDK 26P5001 Diffuse sensors with background suppression dimension drawing 25,2 58 40 Pot LED 80 62 * 13 5,5 5,5 5,5 8 8 24,3 * emitter axis general data photo type background suppression light source pulsed infrared diode sensing distance Tw

alternator rectifier diode 50a

Abstract: colour code diode zener colour code zener zener alternator rectifier alternator diode 50a alternator rectifier TYPE AV 8222 E BZP64 BZP63-39 bzp63
Contextual Info: BZP63 / BZP64 Silicon Power Zener Diode Part no. Description The BZP63/62 are plastic sealed 50A- forward current diodes, which are available in different Zener voltages. Features Applications Forward current 50A Power supplies Zener voltages 22V, 27V, 33V or 39V

Contextual Info: Photoelectric sensors FHDK 26P5001 Diffuse sensors with background suppression dimension drawing 25,2 58 40 Pot LED 80 62 * 13 5,5 5,5 5,5 8 8 24,3 * emitter axis general data photo type background suppression light source pulsed infrared diode sensing distance Tw

Contextual Info: 808nm 2W CW Laser Diode Preliminary Data L8828-62 FEATURES: High output power & high brightness 2W CW Output Power 100 m x 1μm Emitting Area Peak Emission Wavelength 808nm +/- 10nm Multimode High Stability Long Life Compact APPLICATIONS: Unit:mm Printing

Contextual Info: Photoelectric sensors FHDK 26 Diffuse sensors with background suppression sample drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data sample picture type background suppression light source pulsed infrared diode