618 FET Search Results

KAQW210S

Abstract: 618 FET
Contextual Info: Hemar AG, Fendler 50, CH-5524 Nesselnbach, Tel: +41 0 56 618 31 41, Fax +41 (0)56 618 31 42 http://www.hemar.ch High Voltage, Photo DEMos Relay KAQW210S UL 1577/ UL 508 (File No.E108430), FI EN60950 (File No.FI13698) Features KAQW210S 1. Normally Open, Single Pole Single Throw

BC618

Abstract: bc617
Contextual Info: MOTOROLA SC XSTRS/R 1EE 0 | F b3fc.72S4 □□Ö5ä7t> 5 | BC617 BC618 M A X IM U M R A TIN G S R a tin g Sym bol BC 617 BC 618 U nit Collector-Emitter Voltage VcEO Collector-Base Voltage VcBO 40 55 Vdc 50 80 Em itter-Base Voltage Vebo C ASE 29 04, STYLE 17

0X00

Abstract: 16C550 LM3S618
Contextual Info: P RE LIMIN ARY LM3S618 Microcontroller D ATA SHE E T D S -LM3S 618- 2 9 7 2 C o p yri g h t 2 0 0 7 -2 0 0 8 L u mi n ary Mi cro, Inc. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE, EXPRESS OR

Contextual Info: TE X AS INS TRUM E NTS - P RO DUCTI O N D ATA Stellaris LM3S618 Microcontroller D ATA SH E E T D S -LM3S 618- 111 0 7 C o p yri g h t 2 0 07-2011 Te xa s In stru me n ts In co r porated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S618 Microcontroller DATA SH E E T DS - LM 3S 618-1 2 7 3 9 .2 5 1 5 S P M S 123H C opyri ght 2007- 2012 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

618 FET

Contextual Info: MwT-5 26 GHz High Gain, Dual Gate GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 45 FEATURES 45 50 • 10.5 dB GAIN IN A 6-18 GHz BALANCED CIRCUIT • +14 dBm P1dB IN A 6-18 GHz BALANCED CIRCUIT • 0.3 MICRON REFRACTORY METAL/GOLD GATE

Contextual Info: E' M Wha% H EWLETT K PACKARD Avantek Products Surface Mount Cascadable Amplifier 6 to 18 GHz Technical Data PPA-18632 Features Description Pin Configuration • Frequency Range: 6 to 18 GHz The PPA-18632 is two-stage GaAs FET RF amplifier in a 0.25 in. square package. Internal blocking

SG 3425

Contextual Info: M w T -5 G G / S G / H G 20 GHz High Gain Dual Gate GaAs FET DEVICE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 FEATURES - ^ 4 4 j -| 5 u f - -144|- p !z n i_ q • 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUrT

Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is

1278n

Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is

Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is

Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended

Power AMPLIFIER 6012

Abstract: g 6005 CLT-13-6013 CLT-13-6014 CLT-18-2002 CLT-18-2004 CLT-18-6005
Contextual Info: 2.0 to 18.0 GHz Low-Noise Amplifiers □ Frequency Coverage: 2-18 GHz 6-13 GHz 6-18 GHz 8-18 GHz □ 6.0-18.0 GHz, 3.8 dB Noise Figure @ 25 C □ 6.0-13.0 GHz, 3.2 dB Noise Figure @ 25 C □ Temperature Compensation □ MIL-STD-883 Screening □ MIL-Q-9858A Quality

renesas 1650 pwm tioca

Abstract: CS7A TB 09 03 196 1650 tioca LUB 356 PCR 406 J PCR 606 J R5S61650 renesas 1650 pwm renesas h8sx 1650 pwm
Contextual Info: H8SX/1650Group 32 Hardware Manual Renesas 32-Bit CISC Microcomputer H8SX Family H8SX/1600 Series H8SX/1650 Rev.1.00 2003.9.2 R5S61650 Rev. 1.00, 09/03, page ii of xxxvi Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor

Contextual Info: 0.5 to 20.0 GHz Microwave Gain Modules □ Frequency Coverage: 0.5-4 GHz 2-6 GHz 2-18 GHz 6-18 GHz 2-8 GHz 2-20 GHz □ MIC & MMIC Gain Modules on Kovar Carriers □ Small Carrier Sizes: 0.560 in. x 0.246 in. 0.680 in. x 0.328 in. □ Suitable for Military and Commercial

Avantek amt

Abstract: Avantek amplifier Avantek rf amplifier Avantek LWT-2046 LWT-6034 Avantek limiter LMT-4046 Avantek S Avantek amplifier 167 avantek low noise amplifier
Contextual Info: LMT and LWT Series Features • GaAs FET Design LMT/LWT Series Amplifiers • Wide Input Dynamic Range • Narrow Output Power Window • Sharp Limiting “Knee” • Low Harmonics • Low Input/Output VSWR • Thin-Film Hybrid Construction • Hermetic Aluminum Case

Contextual Info: CE L E RI T E K S7E J> 1=574SG3 OOOOlOfl m b 3 1 • CLRT 0.5 to 20.0 GHz Microwave Gain Modules T □ Frequency Coverage: 0.5-4 GHz 2-6 GHz 2-18 GHz 6-18 GHz ' 2-8 GHz 2-20 GHz □ MIC & MMIC Gain Modules on Kovar Carriers □ Small Carrier Sizes: 0.560 in. x 0.246 in.

AX5101

Contextual Info: PRODUCT SELECTION GUIDE M ic r o w a v e GALUUM ARSENIDE FIELD EFFECT TRANSISTORS 100 MHz TO 40 GHz tec h no lo g y ABOUT MwT MwT is located in the heart of California’s Silicon Valley in 3 0 ,0 0 0 square feet of m odern fa c ilitie s d e d ic a te d to the

power amplifier 12 GHZ

Abstract: GHz Power FET TGA8021 A 8014 tga8300 618 FET TGS8250 x-band power amplifier SPDT FETs amplifier 1 2 ghz
Contextual Info: MMC GaAs Products Device Selection Guide AMPLIFIERS FREQ DEVICE DESCRIPTION TG A 8014 6-18 GHz power amplifier TG A 8035 6-18 GHz general-purpose NOMINAL NOISE MISCELLANEOUS GAIN FIGURE FEATURES RANGE 6 -18 GHz 8 dB POWER @ 1 dBc 27 dBm to 14 GHz 14% Power-added

FLL55MK

Abstract: FLL55 TH 2267
Contextual Info: F|.fjVç-. FLL55MK J L-Band Medium & High Power GaAs FETs FEATURES • • • • • High Output Power: P-idg = 36.0dBm Typ. High Gain: G-j^B = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL55MK is a Power GaAs FET that is specifically designed to

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEMRflS'ì ooiaosa ? ô t M GFX38V9500 9.5~ 10.0GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX38V 9500 is an internally impedance matched GaAs power FET especially designed fo r use in 9.5 ~ 10.0 GHz band amplifiers. The herm etically sealed metal-ceramic

NE42484A

Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

618 FET

Contextual Info: Texas Instruments TGA8035 Monolithic 6- to 18-GHz Amplifier Features • 12-dB gain ■ 12-dBm output power at 1-dB gain compression ■ Size: 0.096 x 0.079 x 0.0045 inch Description The TGA8035 is a two-stage GaAs monolithic amplifier for use as a broadband generalpurpose gain block. Two 300-^m gate width

618 FET

Contextual Info: Texas Instruments TGA8014 Monolithic 6- to 18-GHz Power Amplifier Features • 0.5-watt typical midband output power at 1-dB gain compression ■ 8-dB gain ■ High-order matching filters optimize Class “ A” efficiency ■ Size: 0.140 x 0.074 x 0.004 inch