6170 TC Search Results

5sya2020

Abstract: 5SDD40H4000
Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 3930 6170 46x103 0.885 0.135 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-01 Okt. 08 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1

TRANSISTOR REPLACEMENT ECG 1022

Abstract: Hitachi Semiconductor 3517 BT 4840 HD66752 hcd66752bp hcd66752 Hitachi DSA002780 Nippon capacitors
Contextual Info: HD66752 132 x 168-dot Graphics LCD Controller/Driver with Bit-operation Functions ADE-207-326(Z) Rev 1.3 February, 2001 Description The HD66752, dot-matrix graphics LCD controller and driver LSI, displays 132-by-168-dot graphics for four monochrome grayscales. When 12-by-13-dot size fonts are used, up to 13 lines x 11 characters (143

Contextual Info: Tem ic 2N6851 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) -200 TDS(on) (ß ) 0.80 I d (A) -4.0 Parametric limits in accordance with M1L-S-19500I564 where applicable. T 0-205A F (TO-39) Ô D P-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

Contextual Info: Heater Hookup Wire MADE IN USA Additional Heater Hook-up Wires shown in the OMEGALUX Complete Electric Heaters Handbook & Encyclopedia Current Carrying Capacity Base Temperature at 40°C Values tabulated are In Amperes Wire Gage, AWG 24 22 20 18 16 14

2n6851

Contextual Info: Tem ic 2N6851 S ilic o n ix P-Channel Enhancement-Mode Transistor Product Summary V br Dss (V) r DS(on) ( ß ) I d (A) -200 0.80 -4 .0 ; Parametric limits in accordance with M1L-S-I9500i564 where applicable. T0-205A F (TO-39) - O— i} IÏ Ô D P-Channel MOSFET

IRFBA35N60C

Contextual Info: PD - 93800A PROVISIONAL SMPS MOSFET IRFBA35N60C HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Benefits Low Gate Charge Qg Reduces Drive Required l Improved Gate Resistance for Faster

76629D

Abstract: TO-251AA
Contextual Info: HUF76629D3, HUF76629D3S in tefsil O c t o b e r 1999 D ata S h e e t 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging m File N u m b e r a & 4 6 9 2 .3 ~ Features JEDEC TO-251AA JEDEC TO-252AA • Ultra Low On-Resistance • rDS ON = 0.052Q , V GS = 10 V

IY 10060

Abstract: DS25 AT
Contextual Info: Bridgelux RS Array Series Product Data Sheet DS25 BXRA-xxx-3500-F, BXRA-xxx4000-H, BXRA-xxx7000-J, BXRA-40E4000-F, BXRA-40E4500-H, BXRA-40E7500-J, BXRA-xxC4500-F, BXRA-xxC5300-H, BXRA-xxC9000-J Introduction The Bridgelux family of LED Array products delivers high performance, compact and cost-effective solidstate lighting solutions to serve the general lighting market. These products combine the higher efficacy,

Contextual Info: RFD16N06LE, RFD16N06LESM Semiconductor April 1999 Data Sheet 16A, 60V, 0.047 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

Contextual Info: M383L6420BT1 184pin Registered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72 based on 64Mx4 DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.8 Nov. 2000 Rev. 0.8 Nov. 2000 184pin Registered DDR SDRAM MODULE M383L6420BT1 Revision History Revision 0 (Aug 1998)

Contextual Info: STI648100G1 -xxVG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI648100G1 is a 8M x 6^- bits Dynamic RAM high density memory module. The Simple Technology STI648100G1 consist of eight CMOS 8M x 8 bits DRAMs in 32pin TSOP packages, and one 256 bits x 8 bits serial EEPROM

RC3403ADB

Abstract: MAX 7910 RV3403ADB RM3503ADC RC3403ADC RC3403 LM324 as wein bridge oscillator RAYTHEON SEMICONDUCTOR RC-350 RAYTHEON
Contextual Info: RAYTHEON^ SEMICONDUCTOR 57 De J 75T73fc>0 □DQ4bO]i 1 | ^ 57C 04 60 1 7 5 9 7 3 6 0 “ RAYTHEON“ CO* P R O D U C T S PEC IFIC ATIO N S Raytheon LINEAR INTEGRATED CIRCUITS Ground Sensing Quad Operational Amplifier Features RC3403A, RC3503A Mask Pattern

Contextual Info: flPD424101 4,194,304 X 1-Bit Dynamic CMOS RAM rm W NEC Electronics Inc. Description Pin Configurations The ¿ PD424101 is a nibble m ode dynamic RAM orga­ nized as 4,194,304 words by 1 bit and designed to operate from a single + 5-volt power supply. Advanced

RJK0853DPB

Contextual Info: Preliminary Datasheet RJK0853DPB 80V, 40A, 8.0m max. Silicon N Channel Power MOS FET Power Switching R07DS0081EJ0300 Rev.3.00 Apr 09, 2013 Features •     Low on-resistance RDS on = 6.2 m typ. (at VGS = 10 V)  Pb-free  Halogen-free

MB87078

Contextual Info: July 1990 Edition 2.0 FUjlTSU DATA SHEET MB87078 ELECTRIC VOLUME 6-BIT 4-CHANNEL ELECTRIC VOLUME The Fujitsu MB87078 is a 6-bit 4-channel electric volume. Gain is controlled from 0 dB to -32 dB every 0.5 dB steps by digital signal input. The MB87O70 is fabricated in CMOS technology, it achieves low power consumption. Digital

CTR DIV 10

Contextual Info: Signetics FAST 74F168, 74F169 Counters FAST Products FEATURES 74F168 4-Bit Up/Down Decade Synchronous Counter 74F169 4-Blt Up/Down Binary Synchronous Counter Product Specification • Synchronous counting and loading • Up/down counting • BCD decade counter- ‘F168

siemens Logo TDE manual

Abstract: wega 3140 smd marking code mfw cb pj 47 diode Diode MFW 26
Contextual Info: Identification systems Contents CATALOGUE 7 Identification systems Appendix Introduction A Terminal markers B Wire and cable markers C Device markers D Printing systems E Weidmüller Service V Index X Search according to Type or order number, Worldwide activities

76143P

Abstract: 76143S TA7614 AN9321 AN9322 HUF76143P3 HUF76143S3S HUF76143S3ST TB334
Contextual Info: HUF76143P3, HUF76143S3S Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

MS35304

Abstract: spf 316 MS90727 MS35302 I747 HEP 53 spf 557 SPF 455 jqc 3fc bolt grade 4.6
Contextual Info: [ • t,i ]► . i i 'j 5305 «- » . _ o ? APkHO* 30’ V +o- 15* ' s~R «• - 3 0 ‘ APPROX 1 X -* •* >•- r 1*k u M . < to z o OPTIONAL DESIGN s c r m o u 6 —' 2 m NOMINAL S IZ E o > » B THREAD UNF-2A 28 n 3/8 7/16 1/2 9/16 5/8 24 24 20 20 18

HP MMIC INA

Abstract: rfics marking 5 rfics marking 76 sc-70 package pcb layout INA-54063 INA-54063-BLK INA-54063-TR1 702 surface
Contextual Info: 3.0 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-54063 Features • Ultra-Miniature Package Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking With its wide bandwidth and high linearity, the INA-54063 is an excellent candidate for DBS IF

Contextual Info: PRELIMINARY CMOS DIGITAL INTEGRATED CIRCUIT KS0788 Introduction KS0788 is a segment and common driver with 160 channel for a large scale dot matrix LC D . Th is device is LC D driver having multi output, 1/400 duty. LC D driving voltage of this device is 40 V .

TOP249

Abstract: transformer for top249 TOP249 circuit diagram TOP249Y Circuit test power integrations dual flyback 300w converter TOP249Y equivalent TOP249Y pq26 bobbin inductor coil QP 102 laptop power adapter
Contextual Info: Title Engineering Prototype Report 70 W 19 V 3.66A Universal Input Adapter (EP11) Target Applications Laptop Adapters, LCD Monitors, Audio, High Power Adapters Author Power Integrations Applications Dept. Doc Num EPR-00011 Date 22-January-2001 Revision 1.4

an 6169 k

Abstract: 108 to 174 mhz radio receiver
Contextual Info: What H E W L E T T * mLliM P A C K A R D 3.0 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-54063 F ea tu res • • • • Ultra-Miniature Package Single 5 V Supply 29 mA 21.5 dB Gain (1.9 GHz) 8.0 dBm PldB (1.9 GHz) Surface M ount Package SOT-363 (SC -70)

icl 7862

Abstract: 43215 B57301V2472H060 B57321V2103H060 B57321V2103J060 30054 Epcos 2904 characteristic V 19548 transistor 30054 jis h 8502
Contextual Info: NTC thermistors for temperature measurement SMD NTC thermistors with nickel barrier termination, case size 0603 Series/Type: Date: B573*V March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the