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Contextual Info: ECX-6166-13.500M TR RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6166 -13.500M TR Series Ecliptek Custom Crystal Packaging Options Tape & Reel
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Contextual Info: ECX-6166-13.500M RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6166 -13.500M Series Ecliptek Custom Crystal Nominal Frequency 13.500MHz ELECTRICAL SPECIFICATIONS
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picstart plus
Abstract: MCP2510 PIC17CXXX PIC18CXXX KEELOQ SOURCE CODE C
Contextual Info: CMX-MicroNet for dsPIC30F Summary CMX-Micronet is an embedded TCP/IP stack that is specifically designed for optimized use of Flash and RAM resources on Microchip's 16-bit Digital Signal Controller. The software runs directly on the processor with no gateways or PCs required. The stack can be run in standalone mode or work in conjunction with an RTOS. Using only
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PIC16C82X
Abstract: PIC16C820 microchip garage door opener PIC16C821 PIC16C822 200B PIC16CXX
Contextual Info: PIC16C82X EPROM/EEPROM 8-Bit Microcontroller Product Brief Pin Diagram Devices included: • PIC16C820 • PIC16C821 • PIC16C822 PDIP, SOIC, Windowed CERDIP Device EPROM Program EEPROM Data RAM Data PIC16C820 512 64 80 PIC16C821 1K 64 80 PIC16C822 2K 64
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200B
Abstract: PIC16C72A RG41
Contextual Info: PIC16C72A 8-Bit CMOS Microcontrollers with A/D Converter Product Brief Features: Peripheral Features: EPROMProgram RAM Data I/O A/D Channel PWM 2K x 14 128 x 8 22 5 Yes High-performance RISC CPU: 1998 Microchip Technology Inc. Pin Diagrams SDIP, SOIC, SSOP
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23K256
Abstract: 8631 23A256 23K640 256 kbyte Low Power Serial SRAM 6166 ram pic with spi
Contextual Info: Serial SRAM Memory Serial SRAM Memory Family www.microchip.com/SRAM Serial SRAM Memory Do you need more RAM in your application? Does it need to be small, cheap, fast and low power? Are you completing a design and need just a little more volatile memory? Do you need a simple, inexpensive way to add RAM without
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2048X14
Contextual Info: PIC16CR72 28-Pin 8-Bit ROM-Based Microcontroller Product Brief Pin Diagram Features: ROM Program RAM Data I/O 2K x 14 128 x 8 22 A/D Channel PWM 5 Yes ✯ PDIP, SOIC SSOP • Only 35 single word instructions to learn • All single cycle instructions 200 ns except for
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PIC16C432
Abstract: 200B DK-2750 RG41 linbus
Contextual Info: PIC16C432 OTP 8-Bit CMOS MCU with LIN-BUS Transceiver Devices included in this Product Brief: Pin Diagram • PIC16C432 CERDIP, TSSOP High Performance RISC CPU: Device Program Memory RAM Data Memory PIC16C432 2048 x 14 128 x 8 • • • • Interrupt capability
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200B
Abstract: PIC16CR72
Contextual Info: 30428A.FRM Page 1 Thursday, December 12, 1996 4:25 PM PIC16CR72 28-Pin 8-Bit ROM-Based Microcontroller Product Brief Pin Diagram Features: ROM Program RAM Data I/O 2048 128 22 A/D Channel PWM 5 Yes ✯ PDIP, SOIC SSOP • Only 35 single word instructions to learn
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2114 Ram pinout 18
Abstract: MWS5114 MWS5114-3 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X
Contextual Info: MWS5114 S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in
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RM 621A
Abstract: PIE1
Contextual Info: PIC16C62X A Errata Sheet of PIC16C62X(A) Rev. B Silicon The PIC16C62XA parts you have received conform functionally to the intended design (refer to the PIC16C62XA Preliminary Data Sheet, DS30235F). In the PIC16C62X Data Sheet, the common RAM differences between the PIC16C62X and the PIC16C62XA
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Contextual Info: MWS5114 Semiconductor 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple mentary MOS CMOS technology. It is designed for use in
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memory ic 2114
Abstract: 5114E
Contextual Info: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple mentary MOS CMOS technology. It is designed for use in
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2114 Ram pinout 18
Abstract: 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram
Contextual Info: MWS5114 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in
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dspic 4013
Abstract: 4013 internal circuit DC10 DC11 DSPIC30F3014
Contextual Info: dsPIC30F3014/4013 dsPIC30F3014/4013 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 23-4 on page 166) has changed from 1.5V
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dsPIC30F2011
Abstract: DC10 DC11
Contextual Info: dsPIC30F2011/2012/3012/3013 dsPIC30F2011/2012/3012/3013 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications
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Contextual Info: SC46166 300mA ,500KHZ HIGH EFFICIENCY STEP-UP DC/DC CONVERTER DESCRIPTION The SC46166 is a compact, high efficiency, and low voltage step-up DC/DC converter, includes an error amplifier, ramp generator, current comparator, slope compensation, current sense
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DC10
Abstract: DC11 OS65B
Contextual Info: dsPIC30F2010 dsPIC30F2010 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 22-4 on page 148) has changed from 1.5V
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DC10
Abstract: DC11
Contextual Info: dsPIC30F3010/3011 dsPIC30F3010/3011 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 23-4 on page 162) has changed from 1.5V
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DC10
Abstract: DC11 6014A
Contextual Info: dsPIC30F6011A/6012A/6013A/6014A dsPIC30F6011A/6012A/6013A/6014A Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications
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DC10
Abstract: DC11 DS70149
Contextual Info: dsPIC30F5015/5016 dsPIC30F5015/5016 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 24-5 on page 175) has changed from 1.5V
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DC10
Abstract: DC11 dsPIC30F5011
Contextual Info: dsPIC30F5011/5013 dsPIC30F5011/5013 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 24-4 on page 168) has changed from 1.5V
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DS70135E
Abstract: DC10 DC11 dsPIC30F4011 4012
Contextual Info: dsPIC30F4011/4012 dsPIC30F4011/4012 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 24-4 on page 172) has changed from 1.5V
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TC7660
Abstract: 200B DK-2750 IDT6116 PIC16C62A TC7109
Contextual Info: AN796 TC7109 Records Remote Data Automatically Author: Wes Freeman, Microchip Technology, Inc. INTRODUCTION A Microchip Technology analog-to-digital converter, a 2K-byte CMOS static RAM, and some gates and counters can be combined to form a low-cost, flexible, standalone data logging
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