60V 6A DIODE Search Results

vp1210n5

Abstract: VP1204N2
Contextual Info: yjßSupertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package If ^DS ON BVdgs -40V (max) 0.8Q -60V 0.8£i -100V 0.8£i -6A DICEt TO-39 TO-220 -6A VP1204N2 VP1204N5 VP1204ND -6A VP1206N2

X5T851

Abstract: bv 42 TRANSISTOR equivalent
Contextual Info: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in

Contextual Info: A Product Line of Diodes Incorporated Green FZT851 60V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 60V   IC = 6A High Continuous Collector Current  Case Material: Molded Plastic. “Green” Molding Compound. 

FZT851

Abstract: FZT851TA
Contextual Info: A Product Line of Diodes Incorporated Green FZT851 60V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 60V • • IC = 6A High Continuous Collector Current • Case Material: Molded Plastic. “Green” Molding Compound. •

ZX5T1951

Abstract: ZX5T1951G ZX5T
Contextual Info: A Product Line of Diodes Incorporated Green ZX5T1951G 60V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -60V IC = -6A Continuous Collector Current Low Saturation Voltage -95mV max @ -1A

FZT751QTA

Contextual Info: A Product Line of Diodes Incorporated Green FZT751 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -60V IC = -3A high Continuous Current ICM = -6A Peak Pulse Current

Contextual Info: A Product Line of Diodes Incorporated Green ZX5T1951G 60V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -60V IC = -6A Continuous Collector Current Low Saturation Voltage -95mV max @ -1A

ZNS66

Contextual Info: DSS60601MZ4 60V NPN LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data •     BVCEO > 60V IC = 6A High Continuous Current ICM = 12A Peak Pulse Current Low Saturation Voltage VCE sat < 60mV @ 1A Complementary PNP Type: DSS60600MZ4 

ZXT951

Abstract: d1 marking code dpak transistor d marking code dpak transistor
Contextual Info: A Product Line of Diodes Incorporated ZXT951K Green 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR Features Mechanical Data • • • • • • • • • • • • BVCEO > -60V RSAT = 53mΩ Typical Continuous Collector Current IC = -6A Up to 15A Peak Current

transistor ztx 651

Contextual Info: A Product Line of Diodes Incorporated ZTX651 60V NPN MEDIUM POWER TRANSISTOR IN E-LINE Features Mechanical Data • • • • • • BVCEO > 60V IC = 2A High Continuous Collector Current ICM = 6A Peak Pulse Current TJ up to +200°C for High Temperature Operation

VP1210N1

Abstract: VP1206N5 VP1204N1 VP1204N2 VP1204N5 VP1204ND VP1206N1 VP1206N2 VP1206ND 02 diode case R-1
Contextual Info: P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVD89/ BV do8 Order Number / Package ^D ON (max) (min) TO-3 TO-39 TO-220 DICE -40V 0 .8 fi -6A VP1204N1 VP1204N2 VP1204N5 VP1204ND -60V 0 .8 ft -6A VP1206N1 VP1206N2 VP1206N5 VP1206ND

X5T851

Abstract: ZX5T951G marking X5T
Contextual Info: A Product Line of Diodes Incorporated Green ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 60V IC = 6A high Continuous Collector Current ICM = 20A Peak Pulse Current

Contextual Info: A Product Line of Diodes Incorporated Green FZT651 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •             BVCEO > 60V IC = 3A High Continuous Current ICM = 6A Peak Pulse Current Low Saturation Voltage VCE sat < 300mV @ 1A

vp1204n1

Abstract: 08acl
Contextual Info: P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering information B V u ss' b v M8 Order Number / Package ^D ON (max) (min) TO-39 TO-3 TO-220 DICE -40V 0 .8 fl -6A VP1204N1 VP1204N2 VP1204N5 VP1204ND -60V 0 .8 ft -6A VP1206N1 VP1206N2 VP1206N5 VP1206ND

Contextual Info: SEMICONDUCTOR MBRD6U60CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ・Average Output Rectified Current K D L : IO=6A. ・Repetitive Peak Reverse Voltage B : VRRM=60V. H

Contextual Info: SEMICONDUCTOR MBRD6U60CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ・Average Output Rectified Current K L D : IO=6A. ・Repetitive Peak Reverse Voltage B : VRRM=60V. H

Contextual Info: SSM4575M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-Ch D2 BV D2 Low on-resistance D1 D1 Fast switching performance SO-8 S1 G1 Description G2 S2 60V DSS R DS ON 36mΩ ID 6A -60V 72mΩ -4.2A P-Ch BV DSS RDS(ON)

MEN9973J3

Contextual Info: Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MEN9973J3 BVDSS ID RDSON 60V 12A 100mΩ Features • VDS=60V RDS ON =80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=5V, ID=6A

9973

Contextual Info: Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN9973J3 BVDSS ID RDSON 60V 14A 80mΩ Features • VDS=60V RDS ON =80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=4.5V, ID=6A

Contextual Info: Ordering number : ENA1242B CPH6442 N-Channel Power MOSFET http://onsemi.com 60V, 6A, 43mΩ, Single CPH6 Features • • • Low ON-resistance 4V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage

Contextual Info: Ordering number : ENA1242B CPH6442 N-Channel Power MOSFET http://onsemi.com 60V, 6A, 43mΩ, Single CPH6 Features • • • Low ON-resistance 4V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage

Contextual Info: ADP1043A Evaluation Board Forward Active Clamp PRD 1168 Reference Design FEATURES Forward Active Clamp with Synchronous rectifier Voltage Feedback Loop Dimensions: 58.4mmx61mm×12mm Half Brick Input Voltage Range: -34V to -60V DC Output Voltage/Current: 18V/6A DC

GSS4575

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/06/06 REVISED DATE :2005/09/29B N-CH BVDSS 60V N-CH RDS ON 36m N-CH ID 6A P-CH BVDSS -60V N-CH RDS(ON) 72m N-CH ID -4.2A GSS4575 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4575 provide the designer with the best combination of fast switching, ruggedized device design, low

SOT23 marking 6A

Contextual Info: ZXTN23015CFH 15V, SOT23, NPN medium power transistor Summary V BR CEX > 60V, V(BR)CEO > 15V IC(CONT) = 6A RCE(SAT) = 19m⍀ typical VCE(SAT) < 30mV @ 1A PD = 1.25W Complementary part number : ZXTP23015CFH Description Advanced process capability and package design have been used to