60V 3A POWER TRANSISTOR Search Results

C5825

Contextual Info: Power transistor 60V, 3A 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.

C5825

Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
Contextual Info: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and

2SA20

Abstract: MP6Z3
Contextual Info: MP6Z3 Transistors Medium Power Transistor 60V, 3A MP6Z3 zFeatures 1) High speed switching. (tf : Typ. : 30ns at Ic= 3A) 2) Low saturation voltage, typically (Typ. : 200mV at Ic = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.

2SA2071

Abstract: 2SC5824 T100
Contextual Info: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.

C5825

Abstract: 2SC5825 2SA2073
Contextual Info: Power transistor 60V, 3A 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.

Contextual Info: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.

2SA2071

Abstract: 2SC5824 T100 60V transistor npn 2a switching applications
Contextual Info: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.

c5826

Abstract: 2SA2073 2SC5826
Contextual Info: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and

c5826

Contextual Info: Power transistor 60V, 3A 2SC5826 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.

Contextual Info: MP6Z3 Transistors Medium Power Transistor 60V, 3A MP6Z3 zFeatures 1) High speed switching. (tf : Typ. : 30ns at Ic= 3A) 2) Low saturation voltage, typically (Typ. : 200mV at Ic = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.

C5825

Contextual Info: Power transistor 60V, 3A 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.

2SD880Y

Abstract: VCEO-60V 2SD880-Y 2SD880
Contextual Info: SILICON PLASTIC POWER TRANSISTOR NPN 2SD880Y 3A 30W Technical Data …designed for Low Frequency Power Amplifier. F Collector-Emitter Voltage: VCEO=60V F DC Current Gain: 20 @ IC=3A F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage

2SC5824

Contextual Info: Power transistor 60V, 3A 2SC5824 Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071.

mosfet pch 3a 60v

Abstract: JESD97 STS4C3F60L
Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

JESD97

Abstract: STS4C3F60L s4c3f60l mosfet pch 3a 60v
Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

NPN Transistor 8A

Abstract: TIP100 TIP105
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 3A

C5103

Abstract: transistor C5103 C5103 Transistor
Contextual Info: 2SC5103 Datasheet NPN 5A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 5A CPT3 Collector Base Emitter 2SC5103 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low VCE(sat) VCE(sat)=0.3V(Max.) (IC/IB=3A/0.15A)

Contextual Info: MP6X3 Transistors Medium Power Transistor 60V, 3A MP6X3 zDimensions (Unit : mm) zApplication Low frequency amplifier High speed switching MPT6 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC=3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC=2A, IB=200mA)

catalog transistor

Abstract: 2SC5824
Contextual Info: MP6X3 Transistors Medium Power Transistor 60V, 3A MP6X3 zDimensions (Unit : mm) zApplication Low frequency amplifier High speed switching MPT6 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC=3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC=2A, IB=200mA)

2sa1952

Contextual Info: 2SA1952 Datasheet PNP -5A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -5A CPT3 Collector Base Emitter 2SA1952 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5103 3) Low VCE(sat) VCE(sat)= -0.3V(Max.) (IC/IB= -3A/ -0.15A)

c5826

Abstract: 2SA2073 2SC5826
Contextual Info: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA)

c5826

Abstract: 2SC5826 2SA2073 2SA20
Contextual Info: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA)

2SB1274

Abstract: 2SD1913 82055 D2000 transistor
Contextual Info: Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications • Package Dimensions General power amplifier. unit : mm 2041A [2SB1274/2SD1913] • 16.0

Contextual Info: STN3NF06 N-CHANNEL 60V - 0.07Ω - 3A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 3A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of