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    60N65 Search Results

    60N65 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge HCKW60N65CH2A
    VANGUARD 650V 60A IGBT with Trench Field Stop technology, low VCE(sat) of 1.80V at 25°C, integrated anti-parallel fast recovery diode, TO-247 package, suitable for high-frequency switching applications. Original PDF
    badge HCKW60N65BH2A
    VANGUARD 650V 60A IGBT with Trench-FS technology, low Vcesat of 1.65V at 25°C, integrated fast recovery diode, TO-247 package, suitable for high-frequency switching applications. Original PDF
    SF Impression Pixel

    60N65 Price and Stock

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    PanJit Group PJMN060N65FR2_R2_00201

    650V/ 60M / FAST RECOVERY QRR/T
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    DigiKey () PJMN060N65FR2_R2_00201 Digi-Reel 1,997 1
    • 1 $6.64
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    PJMN060N65FR2_R2_00201 Cut Tape 1,997 1
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    PanJit Group PJMF060N65FR2_T0_00601

    650V/ 60M / FAST RECOVERY QRR/T
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    DigiKey PJMF060N65FR2_T0_00601 Tube 1,994 1
    • 1 $6.53
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    • 100 $3.18
    • 1000 $2.62
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    PanJit Group PJMH060N65FR2_T0_00601

    650V/ 60M / FAST RECOVERY QRR/T
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    DigiKey PJMH060N65FR2_T0_00601 Tube 1,500 1
    • 1 $6.99
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    onsemi FCP260N65S3

    MOSFET N-CH 650V 12A TO220-3
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    DigiKey FCP260N65S3 Tube 775 1
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    Avnet Americas FCP260N65S3 Tube 17 Weeks 800
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    Newark FCP260N65S3 Tape & Reel 150
    • 1 $1.70
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    TME FCP260N65S3 1
    • 1 $3.03
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    Richardson RFPD FCP260N65S3 1
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    Avnet Asia FCP260N65S3 17 Weeks 800
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    Wuhan P&S FCP260N65S3 20 1
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    IXYS Corporation IXXX160N65B4

    IGBT PT 650V 310A PLUS247
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    DigiKey IXXX160N65B4 Tube 690 1
    • 1 $23.06
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    Mouser Electronics IXXX160N65B4 214
    • 1 $23.06
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    TTI IXXX160N65B4 Tube 300
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    60N65 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    to3fp

    Abstract: STW60N65
    Contextual Info: 60N65M5 60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh V Power MOSFET in TO-247, TO-3PF Features • Order codes VDSS @ TJmax RDS on max ID 60N65M5 60N65M5 710 V < 0.059 Ω 46 A 1 Worldwide best RDS(on) * area amongst the silicon based devices


    Original
    STW60N65M5 STFW60N65M5 O-247, STFW60N65M5 STW60N65M5 O-247 to3fp STW60N65 PDF

    STW60N65M5

    Abstract: 60N65M5 STW60N65 18222
    Contextual Info: 60N65M5 60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh V Power MOSFET in TO-247, TO-3PF Preliminary data Features Type VDSS @ TJmax RDS on max ID 60N65M5 60N65M5 710 V < 0.059 Ω 46 A 1 • Worldwide best RDS(on) * area amongst the silicon based devices


    Original
    STW60N65M5 STFW60N65M5 O-247, O-247 STW60N65M5 60N65M5 STW60N65 18222 PDF

    40N25

    Abstract: 100N45 60N652 0101T photron
    Contextual Info: CHIP SIZE mil wafer form chip form IR@VR (mA@V) 7,081 40x40 38.8+/-0.5 ≦0.2@23 ≦0.44@1 S40CT1 40N451 7,081 40x40 38.8+/-0.5 ≦0.2@43 ≦0.50@1 S40CT1 40N651 7,081 40x40 38.8+/-0.5 ≦0.2@63 ≦0.65@1 S40CT1 50N251 4,450 50x50 48.8+-/0.5 ≦0.2@23 ≦0.42@1


    Original
    40N251 40N451 40N651 50N251 50N451 60N252 60N452 60N652 66N253 66N453 40N25 100N45 0101T photron PDF

    Contextual Info: 60N65M5 60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh V Power MOSFET in TO-247, TO-3PF Features • Order codes VDSS @ TJmax RDS on max ID 60N65M5 60N65M5 710 V < 0.059 Ω 46 A Worldwide best RDS(on) * area amongst the silicon based devices


    Original
    STW60N65M5 STFW60N65M5 O-247, O-247 PDF

    50N652

    Contextual Info: PRODUCT GROSS DICES CHIP SIZE mil wafer form chip form IR@VR (mA@V) VF@IF (V@A) Mask S14BTA 14N30A 60,478 0.35x0.35 mm 0.32+/-0.01 ≦0.002@33 ≦0.24@100µA ≦0.32@1mA ≦0.40@10mA ≦0.50@30mA ≦0.1@100mA 35N251 9,258 35x35 33.8+/-0.5 ≦0.2@23 ≦0.44@1


    Original
    35x35 50x50 60x60 72x72 50N652 PDF