60GHZ TRANSISTOR Search Results

60GHZ TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

60GHZ TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
60GHz transistor Abstract: SFT-9400B InP transistor HEMT 60Ghz SFT9400B OC-768 98T2 InP HBT transistor low noise Contextual Info: SFT-9400B SFT-9400B 60GHz Differential Input Transimpedance Amplifier 60GHz DIFFERENTIAL INPUT TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9400B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE	Original	SFT-9400B 60GHz SFT-9400B 43Gb/s 40GbE, 100GbE 50GHz 60GHz transistor InP transistor HEMT SFT9400B OC-768 98T2 InP HBT transistor low noise	PDF
OC 76 germanium transistor Abstract: LNA transistor 1.8GHz Contextual Info: START620 NPN SiGe RF Transistor TARGET DATA • LOW NOISE FIGURE: NFmin = 0.8dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 13dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START620 is a member of the START family that provide market with the state of the art of RF silicon process. It uses ST’s Silicon Germanium technology. This technology offers ft’s of up to 45GHz	Original	START620 13dBm OT343 OT343 START620TR START620 45GHz 60GHz. 500MHz-5GHz OC 76 germanium transistor LNA transistor 1.8GHz	PDF
Contextual Info: MT3S110FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S110FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.3dB @f=2GHz • High Gain:\|S21e\|2=9dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05	Original	MT3S110FS	PDF
MT4S200U Contextual Info: MT4S200U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200U UHF-SHF Low Noise Amplifier Application Unit: mm FEATURES • Low Noise Figure :NF=1.7dB @f=5.8GHz • High Gain:\|S21e\|2=9.5dB (@f=5.8GHz) Marking 4 3 P ２ 1 USQ 2 Maximum Ratings (Ta = 25°C)	Original	MT4S200U 50ohm 001GHz 801GHz MT4S200U	PDF
START620 Abstract: 60Ghz 60GHz transistor START620TR Contextual Info: START620 NPN SiGe RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 0.8dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 13dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START620 is a member of the START family	Original	START620 13dBm OT343 OT343 START620 45GHz 60GHz. START620TR 500MHz-5GHzthis 60Ghz 60GHz transistor START620TR	PDF
Contextual Info: MT3S109FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S109FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.35dB @f=2GHz • High Gain:\|S21e\|2=8.2dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05	Original	MT3S109FS	PDF
60GHz transistor Abstract: 2-1E1A Contextual Info: MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.85dB @f=2GHz • High Gain:\|S21e\|2= 13dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05	Original	MT3S107FS 60GHz transistor 2-1E1A	PDF
60GHz transistor Contextual Info: MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.2dB @f=2GHz • High Gain:\|S21e\|2=10dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05	Original	MT3S106FS 60GHz transistor	PDF
60GHz transistor Abstract: MT3S106FS 60Ghz germanium transistors NPN Contextual Info: MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.2dB @f=2GHz • High Gain:\|S21e\|2=10dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05	Original	MT3S106FS 60GHz transistor MT3S106FS 60Ghz germanium transistors NPN	PDF
START620 Abstract: 60Ghz 60GHz transistor START620TR 500MHz-5GHz Contextual Info: START620 NPN SiGe RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 0.8dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 13dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START620 is a member of the START family	Original	START620 13dBm OT343 OT343 START620 45GHz 60GHz. START620TR 500MHz-5GHzthis 60Ghz 60GHz transistor START620TR 500MHz-5GHz	PDF
Contextual Info: MT3S109FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S109FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.35dB @f=2GHz • High Gain:\|S21e\|2=8.2dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05	Original	MT3S109FS	PDF
60GHz transistor Contextual Info: MT3S108FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S108FS VCO OSCILLETOR STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.9dB @f=2GHz • High Gain:\|S21e\|2=11.5dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05	Original	MT3S108FS 60GHz transistor	PDF
Contextual Info: MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.85dB @f=2GHz • High Gain:\|S21e\|2= 13dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05	Original	MT3S107FS	PDF
MT3S110FS Contextual Info: MT3S110FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S110FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.3dB @f=2GHz • High Gain:\|S21e\|2=9dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05	Original	MT3S110FS MT3S110FS	PDF

Contextual Info: MT3S108FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S108FS VCO OSCILLETOR STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.9dB @f=2GHz • High Gain:\|S21e\|2=11.5dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05	Original	MT3S108FS	PDF
MT6L76FS Contextual Info: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10	Original	MT6L76FS MT3S06FS MT3S106FS MT6L76FS	PDF
Contextual Info: MT6L67FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L67FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S36FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 8	Original	MT6L67FS MT3S36FS MT3S106FS	PDF
60Ghz Abstract: 60GHz transistor MT4S100T Contextual Info: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P6 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics	Original	MT4S100T 60Ghz 60GHz transistor MT4S100T	PDF
MT6L77FS Contextual Info: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded	Original	MT6L77FS MT3S11FS MT3S106FS MT6L77FS	PDF
Contextual Info: MT6L67FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L67FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S36FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded	Original	MT6L67FS MT3S36FS MT3S106FS	PDF
Contextual Info: MT6L75FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L75FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded	Original	MT6L75FS MT3S07FS MT3S106FS	PDF
Contextual Info: MT6L74FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L74FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S110FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded	Original	MT6L74FS MT3S07FS MT3S110FS	PDF
MT6L76FS Contextual Info: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded	Original	MT6L76FS MT3S06FS MT3S106FS MT6L76FS	PDF
60Ghz Abstract: 60GHz transistor MT3S107FS Contextual Info: MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.85dB @f=2GHz • High Gain:\|S21e\|2= 13dB (@f=2GHz) 0.6 ±0.05 • 3 2 0.1±0.05 1 Absolute Maximum Ratings (Ta = 25°C)	Original	MT3S107FS 60Ghz 60GHz transistor MT3S107FS	PDF

60GHZ TRANSISTOR Search Results

60GHZ TRANSISTOR Result Highlights (5)

60GHZ TRANSISTOR Datasheets Context Search

60GHz transistor

OC 76 germanium transistor

MT4S200U

START620

60GHz transistor

60GHz transistor

60GHz transistor

START620

60GHz transistor

MT3S110FS

MT6L76FS

60Ghz

MT6L77FS

MT6L76FS

60Ghz