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604A/BEA
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
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41.4KB |
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604AI
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International Contols & Measurements
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AC Phase Controls / AC Power |
Scan |
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157.22KB |
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604AIP
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International Contols & Measurements
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AC Phase Controls / AC Power |
Scan |
PDF
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157.22KB |
2 |
ME8604AS7G
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MICRONE
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Non-isolated buck-boost regulator with integrated high-voltage MOSFET, available in multiple variants up to 10W output power, featuring built-in protections, 70kHz maximum switching frequency, and support for various topologies. |
Original |
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JMSL0604AG
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET in PDFN5x6-8L package with 3.9 mΩ typical RDS(ON) at VGS = 10 V, 98 A continuous drain current, low gate charge, and 1.78 Ω gate resistance. |
Original |
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JMSL0604AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in PDFN5x6-8L package with 3.6 mΩ typical RDS(ON) at 10V VGS, 112A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
Original |
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VS4604AT
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VANGUARD
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40V/150A N-Channel Advanced Power MOSFET with low on-resistance of 2.6 mOhm at VGS=10V, TO-220AB package, suitable for high-efficiency power applications. |
Original |
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VS4604AD
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VANGUARD
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40V/140A N-Channel Advanced Power MOSFET with low on-resistance of 2.8 mOhm at VGS=10V, TO-252 package, suitable for high-efficiency power switching applications. |
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VS3604AT
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VANGUARD
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30V/180A N-Channel Advanced Power MOSFET with 2.1 mOhm RDS(on) at VGS=10V, TO-220AB package, designed for high-efficiency power applications requiring low on-resistance and high current capability. |
Original |
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VS4604ATD
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VANGUARD
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40V/150A N-Channel Advanced Power MOSFET with RDS(on) of 2.6 mOhm at VGS=10V, TO-263 package, 100% avalanche tested, suitable for high-efficiency power applications. |
Original |
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ME8604AS7G
