600V PNP Search Results

Contextual Info: r r u t m . _ TECHNOLOGY 25MHz, 600V/tis Op Amp KOTURCS DCSCMPTIOÍ1 • 25MHz Gain-Bandwidth ■ 600V/|iS Slew Rate ■ 2.5mA Maximum Supply Current The LT1357 is a high speed, very high slew rate opera­ tional amplifier with outstanding AC and DC performance.

K 1358

Abstract: 130 c g03 LT1354 LT1355 LT1356 LT1357 LT1358 LT1360 LT1365 1358 TRANSISTOR
Contextual Info: LT1358/LT1359 Dual and Quad 25MHz, 600V/µs Op Amps U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 25MHz Gain Bandwidth 600V/µs Slew Rate 2.5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads

k 1358

Abstract: 1358 TRANSISTOR datasheet 1358 lt1359cn B 1359 MARKING 1358 LT1354 LT1355 LT1356 LT1357
Contextual Info: LT1358/LT1359 Dual and Quad 25MHz, 600V/µs Op Amps U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 25MHz Gain-Bandwidth 600V/µs Slew Rate 2.5mA Maximum Supply Current per Amplifier Unity Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads

pnp transistor 600V

Abstract: TSA1765 600v pnp TRANSISTOR 0835
Contextual Info: TSA1765 High Voltage PNP Epitaxial Planar Transistor SOT-223 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -600V BVCEO -560V IC -150mA VCE SAT Features ● ● Ordering Information Low Saturation Voltages High Breakdown Voltage Part No.

Contextual Info: SFT5094-4 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.

Contextual Info: SFT5094/5 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.

Contextual Info: SFT5094-4 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.

Contextual Info: SFT5094/5 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.

600B

Abstract: TS420-B
Contextual Info: TS420-B  SENSITIVE SCR FEATURES IT RMS =4A VDRM/VRRM = 400 or 600V IGT < 200µA A DESCRIPTION A The TS420-B series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount technology.

TR0007A

Abstract: STX6905 STX7905 pnp transistor 600V transistor A 562
Contextual Info: PRELIMINARY STX6905 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 1 AMP 600 VOLTS PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • • • BVCBO 600V. Fast Switching. Low Leakage.

NTE5485

Abstract: NTE5481 NTE5486 NTE5487 SCR PNPN TO64 package NTE5482 NTE5480 NTE5483 NTE5484
Contextual Info: NTE5480 thru NTE5487 Silicon Controlled Rectifier SCR 8 Amp, TO64 Description: The NTE5480 through NTE5487 are multi−purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V.

600V PNP

Abstract: pnp transistor 600V Transistor SMD 028 SMD TRANSISTOR MARKING 28 transistor 2sa1413 high voltage TRANSISTOR SMD 1a 9 2SA1413-Z 2sa1413
Contextual Info: Transistors SMD Type PNP Silicon Transistor 2SA1413-Z Features 6.50 +0.2 5.30-0.2 +0.15 -0.15 High Voltage: VCEO=-600V +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127

Contextual Info: TS820-B/T SENSITIVE SCR FEATURES • It rm s = 8A ■ V drm /V rrm = 400, 600V, 700V ■ Ig t < 200^A ■ SMD PACKAGE DESCRIPTION The TS820-B/T series of SCR use a high perform­ ance TOPGLASS PNPN technology. The parts are intended for general purpose appli­

relay 12v 200 ohm

Abstract: HCR100-8 HCR100 MCR100-8 MCR100-6
Contextual Info: Shantou Huashan Electronic Devices Co.,Ltd. HCR100 Series Sensitive Gate Silicon Controlled Rectifiers █ Features * Repetitive Peak Off-State Voltage : 400V thru 600V * R.M.S On-State Current IT(RMS =0.8A) * Low On-State Voltage (1.2V(Typ.)@ ITM) █ General Description

TF561S

Abstract: Thyristor to220 600v 12A TO220F TF541M TF321S tf541m 22 l
Contextual Info: Selection Guide Thyristors Type Rated Current 3A General purpose 5A 8A High sensitivity Array 3A 5A 5A x 4 circuits 200V TF321M TF321S TF521M TF521S TF821M TF821S TF321M-A — — Reverse Voltage 400V 600V TF341M TF361M TF341S TF361S TF541M TF561M ✽ TF541S

HSB100-x

Contextual Info: = 600 V IT RMS = 0.8A Silicon Controlled Rectifier 3.Anode Symbol FEATURES 2.Gate ‰ ‰ ‰ ‰ Repetitive Peak Off-State Voltage: 400V/600V R.M.S On-state Current (IT(RMS)=0.8A) Average On-state Current (IT(AV)=0.5A) Low On-State Voltage (1.2VTyp@ITM) 1.Cathode

K 1357

Abstract: LT1354 LT1355 LT1356 LT1357 LT1360 LT1365 1357 PNP TRANSISTOR
Contextual Info: LT1357 25MHz, 600V/µs Op Amp U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1357 is a high speed, very high slew rate operational amplifier with outstanding AC and DC performance. The LT1357 has much lower supply current, lower input

Contextual Info: urn TECHNOLOGY LT1358/LT1359 D ual a n d Q u a d 25MHz, óOOV/^is O p Am ps Septem ber 1993 F€flTUft€S DCSCftlPTIOn • 25MHz Gain-Bandwidth ■ 600V/|iS Slew Rate ■ 2.5mA Maximum Supply Current per Amplifier The LT1358/LT1359 are dual and quad, low power, high

Contextual Info: LT1357 25MHz, 600V/µs Op Amp U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1357 is a high speed, very high slew rate operational amplifier with outstanding AC and DC performance. The LT1357 has much lower supply current, lower input

relay rs-5

Abstract: Capacitor 600v 2000pF ET0131 ET0141 ET0151 ET0201
Contextual Info: PNPN Switch ET0131, ET0141, ET0151, ET0201 Example of application circuit ignition External Dimensions (Unit: mm) φ 0.6 ± 0.05 T2 marking Discharge gap T1 5.0 ± 0.2 62.3 ± 0.7 T2 φ 2.7 ± 0.2 Weight: Approx. 2.6g •Absolute Maximum Ratings Ratings

2N6684

Abstract: 2N6681 2N6683 2N6681-5 N6684 2N6682 2N6685 SCRs 15A HX 710
Contextual Info: 2N6681 2N6682 2N6683 2N6684 2N6685 SCRs 1.0 Amp RMS, Plastic 800V FEATURES: DESCRIPTION: • • • • • • This plastic PNPN device is rated at 1.0 Amp RMS maximum on-state current, w ith rated voltages up to 800 volts. All units in th is series offer fu ll hard glass

MCR101

Abstract: MCR101-4 MCR101-6 MCR101-8 SCR sensitive gate SCR 20A 600V scr 200a 200v
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MCR101 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ DESCRIPTION PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls,

Triac to220

Abstract: Thyristor triac 400v 16a triac 600v 25a TRIAC 25a 600v Triac 3a 600v triac 400v 25a triac 10a 400v thyristor 3a 600v Thyristor to220
Contextual Info: Index by Part Number Part number ET013 ET015 ET020 SLA0201 STA203A STA221A TF321M TF321M-A TF321S TF341M TF341M-A TF341S TF361M TF361M-A TF361S TF521M TF521S TF541M TF541S TF541S-A TF561M TF561S TF561S-A TF821M TF821S TF841M TF841S TF861M TF861S TFC561D TFD312S-C

Triac T435

Abstract: T220AB T410 ISOWATT weight sot194 Triac T435 80 T435 70 T435 Triac 3a 600v SOT-194
Contextual Info: T410 T435 HIGH PERFORMANCE TRIACS . . FEATURES ITRMS = 4 A VDRM = 400 V to 800 V SENSITIVE GATE : IGT ≤ 10 mA HIGH COMMUTATION : dI/dt c > 3.5 A/ms A1 A2 G A1 A2 DESCRIPTION The T410 / T435 high voltage TRIAC Families are high performance planar diffused PNPN devices glass passivated technology.