600V 15A Search Results

600v 15a

Abstract: igbt 600v 6mbi 6MBI 15LS-060 IGBT 600V 15A
Contextual Info: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A

T32 fuse l 250v

Abstract: LPCC-20 LPJ600SP NOS 600 amp fuses LPSRK1712SP LPJ-20SP CDF30J3 EFJ30X-3PB6 fuse base IEC 269 KRPC2000SP
Contextual Info: Low Voltage, Branch Circuit Rated Fuses Page 12-14 15-16 Class Fuses Volts CC . . . . . . LP-CC . . . . . . . . . . . . . . . 600V . . . . . 17 FNQ-R . . . . . . . . . . . . . . . KTK-R . . . . . . . . . . . . . . . 600V . . . . . 600V . . . . . 18 19 600V . . . . .

600v

Abstract: igbt igbt 600V
Contextual Info: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 972 733-1700 - www.fujisemiconductor.com

mosfet 600V 20A

Abstract: L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera
Contextual Info: TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION. Page 1 of 3 TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION STRUCTURE TO INCREASE POWER EFFICIENCY 12A, 15A, or 20A 600V MOSFETs in Second DTMOS Generation Utilize "Superjunction" Technology to Reduce

YG972S6

Abstract: TO-220F torque ips circuit diagram YG972S6R TO-220F JEDEC YG971S6R PH967C6 YG971S6 PH965C6 YA975C6R
Contextual Info: Super LLD For PFC circuit Device Type PH965C6 PH967C6 YA971S6R YA972S6R YA975C6R Features Super LLD(For PFC circuit) ‚hp 20A/600V Super LLD(For PFC circuit) ‚hp 30A/600V Super LLD2(For PFC circuit) ‚ho 8A/600V Super LLD2(For PFC circuit) ‚ho 10A/600V

igbt 600V

Abstract: 15LS-060 6MBI 15LS-060
Contextual Info: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com

600v

Abstract: 090-30 Trench 10kw inverter igbt 600V infineon IGBT 1200v 1200V
Contextual Info: High-Voltage Products [A] 4 6 8 10 15 20 25 30 40 50 60 75 1200V TRENCHSTOPTM 1200V HS3 Family 600V TRENCHSTOPTM 600V RC-Drives 600V HS3 Family IGBTs – For all Your Hard Switching Requirements INFINEON’S 600V AND 1200V TRENCHSTOP IGBTs are the most efficient devices

10si6

Abstract: 07.311.4153.0 57.910.5053.0
Contextual Info: Modular Fuse Terminal & Feed-through Terminal with Universal Foot 10mnr Wire Size fine stranded 1-10 CSA_ 600V* 16-6 AWG 15A 600V 22-6 AWG 15A UL A p p ro va ls 10mrrr stranded 10-16 fine stranded 1-10 600V 16-6 AWG stranded 10-16 65A ' Ä ® ««&<§ <m

Contextual Info: IRAM630-1562F Intelligent Power Module for Energy Efficient Compressor Applications 15A, 600V IPM with Integrated PFC and Open Emitter Pins Description International Rectifier's IRAM630-1562F is a 15A, 600V PFC+Inverter Intelligent Power Module IPM with

Contextual Info: A130 30 AMP ADAPRTER Voltage / Amperage Rating Maximum Voltage: 600V Maximum Amperage: 15A & 30A Agency Listing N/A Copyright 2007 Test Products International, Inc. Category Rating Insulation Material CAT III 600V Silicone ø4.0 Dimensions Lead Length: 43.30inches

Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT15D60B APT15D60S 600V 600V 15A 15A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

SIDC06D60F6

Contextual Info: Preliminary SIDC06D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D60F6 600V IF 15A A This chip is used for:

Contextual Info: ISL9R1560G2_F085 15A, 600V Ultrafast Rectifier Features 15A, 600V Ultrafast Rectifier • High Speed Switching trr=26ns(Typ. @ IF=15A ) The ISL9R1560G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

4344

Abstract: SIDC06D60F
Contextual Info: Preliminary SIDC06D60F Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC06D60F 600V ICn 15A A This chip is used for:

R1560

Abstract: R1560P2 IRF450 ISL9R1560P2 TA49410
Contextual Info: [ /Title ISL9 R1560 P2 /Subje ct (15A, 600V Stealth Diode) /Autho r () /Keyw ords (Intersi l Corpor ation, semico nducto r, 15A, 600V Stealth ™ Diode, TO220AC ) /Creato r () /DOCI NFO pdfmar k [ /Page ISL9R1560P2 TM Data Sheet September 2000 File Number

Contextual Info: Preliminary SIDC06D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC06D60F6 VR 600V IF 15A A This chip is used for:

Contextual Info: ISL9R1560G2_F085 15A, 600V Stealth Rectifier Features 15A, 600V Stealth Rectifier • High Speed Switching trr=26ns(Typ. @ IF=15A ) The ISL9R1560G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

Contextual Info: SIGC14T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 15A

Contextual Info: SIGC14T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 15A

st 85500

Abstract: T90RIA120 T50RIA T50RIA60 T70RIA T70RIA60 T90RIA T90RIA60 ria 120
Contextual Info: 2002-07-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 72-079-47 T50RIA60 tyrist 600V 80A 72-080-10 T70RIA60 tyrist 600V 110A 72-080-44 T70RIA120tyrist 1200V 110A 72-080-85 T90RIA60 tyrist 600V 141A

Contextual Info: SIGC08T60S 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC08T60S VCE ICn 600V 15A This chip is used for:

R1560G2

Abstract: IRF450 ISL9R1560G2 TA49410 dt3800
Contextual Info: [ /Title ISL9R 1560G 2 /Subjec t (15A, 600V Stealth Diode) /Autho r () /Keyw ords (Intersi l Corpor ation, semico nducto r, 15A, 600V Stealth ™ Diode, TO247) /Creato r () /DOCI NFO pdfmar k [ /Page Mode /UseO ISL9R1560G2 TM Data Sheet September 2000

SIDC06D60F6

Contextual Info: Preliminary SIDC06D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D60F6 600V IF 15A A This chip is used for:

SIDC06D60F6

Contextual Info: Preliminary SIDC06D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D60F6 600V IF 15A A This chip is used for: