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    600N25N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC600N25NS3 G

    Transistor: N-MOSFET; 250V; 25A; 125W; single transistor
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    TME BSC600N25NS3 G 4,410 21
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    • 100 $2.71
    • 1000 $2.40
    • 10000 $2.40
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    Mouser Electronics BSC600N25NS3 G 1,485
    • 1 $4.27
    • 10 $2.80
    • 100 $2.09
    • 1000 $1.62
    • 10000 $1.37
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    Bristol Electronics BSC600N25NS3 G 408
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    Chip 1 Exchange BSC600N25NS3 G 90
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    Infineon Technologies AG IPD600N25N3 G

    Transistor: N-MOSFET; 250V; 25A; DPAK
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    TME IPD600N25N3 G 1,107 22
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    • 100 $2.03
    • 1000 $1.78
    • 10000 $1.78
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    Infineon Technologies AG IPP600N25N3GXKSA1

    Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
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    TME IPP600N25N3GXKSA1 130 1
    • 1 $2.38
    • 10 $2.24
    • 100 $2.24
    • 1000 $2.24
    • 10000 $2.24
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    Avnet Americas IPP600N25N3GXKSA1 Tube 31 Weeks 500
    • 1 -
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    • 1000 $1.12
    • 10000 $1.01
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    Mouser Electronics IPP600N25N3GXKSA1 420
    • 1 $3.44
    • 10 $1.73
    • 100 $1.56
    • 1000 $1.24
    • 10000 $1.19
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    Newark IPP600N25N3GXKSA1 Bulk 1
    • 1 $3.44
    • 10 $2.24
    • 100 $1.55
    • 1000 $1.23
    • 10000 $1.18
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    Rochester Electronics IPP600N25N3GXKSA1 90 1
    • 1 -
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    • 100 $1.37
    • 1000 $1.14
    • 10000 $1.01
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    Rutronik IPP600N25N3GXKSA1 Tube 350 1
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    • 10000 $1.08
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    EBV Elektronik IPP600N25N3GXKSA1 21 Weeks 500
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    Vyrian IPP600N25N3GXKSA1 5,623
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    Infineon Technologies AG IPD600N25N3GATMA1

    Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IPD600N25N3GATMA1 2,500
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    Avnet Americas IPD600N25N3GATMA1 Tape & Reel 75,000 30 Weeks 2,500
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    Mouser Electronics IPD600N25N3GATMA1 13,894
    • 1 $3.59
    • 10 $1.81
    • 100 $1.62
    • 1000 $1.28
    • 10000 $1.15
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    Newark IPD600N25N3GATMA1 Bulk 4,576 1
    • 1 $4.28
    • 10 $2.78
    • 100 $1.93
    • 1000 $1.53
    • 10000 $1.47
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    EBV Elektronik IPD600N25N3GATMA1 12,500 21 Weeks 2,500
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    Win Source Electronics IPD600N25N3GATMA1 428
    • 1 -
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    • 100 $2.33
    • 1000 $2.02
    • 10000 $2.02
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    Infineon Technologies AG BSC600N25NS3GATMA1

    Transistor: N-MOSFET; unipolar; 250V; 25A; 125W; PG-TDSON-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME BSC600N25NS3GATMA1 5,000
    • 1 -
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    • 10000 $1.95
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    Avnet Americas BSC600N25NS3GATMA1 Tape & Reel 52 Weeks 5,000
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    • 10000 $1.43
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    Mouser Electronics BSC600N25NS3GATMA1 95
    • 1 $4.21
    • 10 $2.15
    • 100 $1.95
    • 1000 $1.63
    • 10000 $1.57
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    Newark () BSC600N25NS3GATMA1 Cut Tape 13,791 5
    • 1 -
    • 10 $2.77
    • 100 $2.14
    • 1000 $1.90
    • 10000 $1.90
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    BSC600N25NS3GATMA1 Tape & Reel 13,791 100
    • 1 -
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    • 100 $2.14
    • 1000 $1.90
    • 10000 $1.90
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    BSC600N25NS3GATMA1 Tape & Reel 5,000
    • 1 -
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    • 100 -
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    • 10000 $1.77
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    BSC600N25NS3GATMA1 Tape & Reel 5,000
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    • 10000 $1.82
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    Rochester Electronics BSC600N25NS3GATMA1 543 1
    • 1 -
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    • 100 $1.33
    • 1000 $1.19
    • 10000 $1.12
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    Ameya Holding Limited BSC600N25NS3GATMA1 2,195
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    EBV Elektronik BSC600N25NS3GATMA1 53 Weeks 5,000
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    Find more 600N25N price and stock on Findchips.com

    600N25N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BSC600N25NS3 G

    Abstract: 600N25NS IEC61249-2-21 JESD22 FS25
    Contextual Info: 600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 60 mΩ ID 25 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant


    Original     		bsc600n25ns3iec61249-2-21600n25nsbsc600n25ns3 g+2jesd22fs25 PDF

    IEC61249-2-21

    Abstract: JESD22
    Contextual Info: 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 60 mΩ ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		ipd600n25n3iec61249-2-21pg-to252-3600n25n+218ologiesjesd22 PDF

    600N25N

    Abstract: DD 127 D TRANSISTOR ds 290 14H IEC61249-2-21 JESD22 PG-TO220-3 IPI600N25N3 G
    Contextual Info: 600N25N3 G 600N25N3 G 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 60 mΩ ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		ipb600n25n3ipp600n25n3ipi600n25n3iec61249-2-21+8pg-to263-3pg-to220-3pg-to262-3600n25ndd 127 d transistords 290 14hjesd22ipi600n25n3 g PDF

    Contextual Info: 600N25N3 G 600N25N3 G 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • 175 °C operating temperature


    Original     		ipb600n25n3ipp600n25n3ipi600n25n3iec61249-2-21+3pg-to263-3pg-to220-3pg-to262-3 PDF

    600N25NS

    Contextual Info: 600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant


    Original     		bsc600n25ns3iec61249-2-21600n25ns PDF

    600N25N

    Contextual Info: 600N25N3 G 600N25N3 G 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		ipb600n25n3ipp600n25n3ipi600n25n3iec61249-2-21+3pg-to263-3600n25npg-to220-3 PDF

    IPD600N25N3

    Abstract: F12a
    Contextual Info: 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		ipd600n25n3iec61249-2-21pg-to252-3600n25n+1f12a PDF

    600N25N

    Abstract: IEC61249-2-21 JESD22 PG-TO220-3
    Contextual Info: 600N25N3 G 600N25N3 G 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 60 mΩ ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		ipb600n25n3ipp600n25n3ipi600n25n3iec61249-2-21+5pg-to263-3pg-to220-3pg-to262-3600n25njesd22 PDF

    Contextual Info: 600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • Pb-free lead plating; RoHS compliant


    Original     		bsc600n25ns3iec61249-2-21600n25ns PDF

    Contextual Info: 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		ipd600n25n3iec61249-2-21pg-to252-3600n25n PDF