600N25N Search Results
600N25N Price and Stock
Infineon Technologies AG BSC600N25NS3GATMA1MOSFET N-CH 250V 25A TDSON-8-1 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC600N25NS3GATMA1 | Cut Tape | 18,567 | 1 |
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BSC600N25NS3GATMA1 | Reel | 310,000 | 26 Weeks | 5,000 |
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BSC600N25NS3GATMA1 | 31 |
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BSC600N25NS3GATMA1 | Reel | 310,000 | 5,000 |
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BSC600N25NS3GATMA1 | 6,050 | 1 |
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BSC600N25NS3GATMA1 | 3,230 |
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BSC600N25NS3GATMA1 | Cut Tape | 4,127 | 0 Weeks, 1 Days | 1 |
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BSC600N25NS3GATMA1 | 2,049 |
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BSC600N25NS3GATMA1 | 27 Weeks | 5,000 |
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BSC600N25NS3GATMA1 | 18,570 |
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Infineon Technologies AG IPB600N25N3GATMA1MOSFET N-CH 250V 25A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB600N25N3GATMA1 | Cut Tape | 5,054 | 1 |
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IPB600N25N3GATMA1 | Reel | 16 Weeks | 1,000 |
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IPB600N25N3GATMA1 | 1,410 |
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IPB600N25N3GATMA1 | Cut Tape | 1,000 | 1 |
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IPB600N25N3GATMA1 | 347 | 1 |
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IPB600N25N3GATMA1 | 1 |
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IPB600N25N3GATMA1 | Cut Tape | 2,648 | 0 Weeks, 1 Days | 1 |
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IPB600N25N3GATMA1 | 17 Weeks | 1,000 |
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Infineon Technologies AG IPD600N25N3GATMA1MOSFET N-CH 250V 25A TO252-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD600N25N3GATMA1 | Cut Tape | 2,057 | 1 |
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IPD600N25N3GATMA1 | Reel | 16 Weeks | 2,500 |
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IPD600N25N3GATMA1 | 1,671 |
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IPD600N25N3GATMA1 | Bulk | 23 | 1 |
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IPD600N25N3GATMA1 | 546 | 1 |
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IPD600N25N3GATMA1 | 1,015 |
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IPD600N25N3GATMA1 | Cut Tape | 2,280 | 0 Weeks, 1 Days | 1 |
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IPD600N25N3GATMA1 | 22,500 | 17 Weeks | 2,500 |
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IPD600N25N3GATMA1 | 17,500 | 1 |
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IPD600N25N3GATMA1 | 9,160 |
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Infineon Technologies AG IPA600N25NM3SXKSA1MOSFET N-CH 250V 15A TO220 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPA600N25NM3SXKSA1 | Tube | 140 | 1 |
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IPA600N25NM3SXKSA1 | Tube | 16 Weeks | 500 |
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IPA600N25NM3SXKSA1 |
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IPA600N25NM3SXKSA1 | 920 | 1 |
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IPA600N25NM3SXKSA1 | 1 |
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IPA600N25NM3SXKSA1 | Tube | 745 | 0 Weeks, 1 Days | 1 |
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IPA600N25NM3SXKSA1 | 17 Weeks | 500 |
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Infineon Technologies AG IPI600N25N3GAKSA1MOSFET N-CH 250V 25A TO262-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI600N25N3GAKSA1 | Tube | 500 |
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IPI600N25N3GAKSA1 | Tube | 500 |
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IPI600N25N3GAKSA1 | 200 | 1 |
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IPI600N25N3GAKSA1 | 53 Weeks | 50 |
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IPI600N25N3GAKSA1 | 2,575 |
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600N25N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BSC600N25NS3 G
Abstract: 600N25NS IEC61249-2-21 JESD22 FS25
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BSC600N25NS3 IEC61249-2-21 600N25NS BSC600N25NS3 G 600N25NS IEC61249-2-21 JESD22 FS25 | |
IEC61249-2-21
Abstract: JESD22
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Original |
IPD600N25N3 IEC61249-2-21 PG-TO252-3 600N25N 18ologies IEC61249-2-21 JESD22 | |
600N25N
Abstract: DD 127 D TRANSISTOR ds 290 14H IEC61249-2-21 JESD22 PG-TO220-3 IPI600N25N3 G
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IPB600N25N3 IPP600N25N3 IPI600N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 600N25N DD 127 D TRANSISTOR ds 290 14H IEC61249-2-21 JESD22 PG-TO220-3 IPI600N25N3 G | |
Contextual Info: 600N25N3 G 600N25N3 G 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • 175 °C operating temperature |
Original |
IPB600N25N3 IPP600N25N3 IPI600N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 | |
600N25NSContextual Info: 600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant |
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BSC600N25NS3 IEC61249-2-21 600N25NS 600N25NS | |
600N25NContextual Info: 600N25N3 G 600N25N3 G 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature |
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IPB600N25N3 IPP600N25N3 IPI600N25N3 IEC61249-2-21 PG-TO263-3 600N25N PG-TO220-3 600N25N | |
IPD600N25N3
Abstract: F12a
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IPD600N25N3 IEC61249-2-21 PG-TO252-3 600N25N F12a | |
600N25N
Abstract: IEC61249-2-21 JESD22 PG-TO220-3
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IPB600N25N3 IPP600N25N3 IPI600N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 600N25N IEC61249-2-21 JESD22 PG-TO220-3 | |
Contextual Info: 600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • Pb-free lead plating; RoHS compliant |
Original |
BSC600N25NS3 IEC61249-2-21 600N25NS | |
Contextual Info: 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant |
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IPD600N25N3 IEC61249-2-21 PG-TO252-3 600N25N |