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Infineon Technologies AG


Infineon Technologies AG BSC600N25NS3 G Transistor: N-MOSFET; 250V; 25A; 125W; single transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	BSC600N25NS3 G		4,410		21	1 - 10 - 100 $2.70 1000 $2.40 10000 $2.40	Buy Now
Bristol Electronics	BSC600N25NS3 G		408			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	BSC600N25NS3 G		90			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPD600N25N3 G Transistor: N-MOSFET; 250V; 25A; DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IPD600N25N3 G		1,107		22	1 - 10 - 100 $2.03 1000 $1.78 10000 $1.78	Buy Now
Infineon Technologies AG IPP600N25N3GXKSA1 Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IPP600N25N3GXKSA1		130		1	1 $2.38 10 $2.23 100 $2.23 1000 $2.23 10000 $2.23	Buy Now
Avnet Americas	IPP600N25N3GXKSA1	Tube		31 Weeks	500	1 - 10 - 100 - 1000 $1.12 10000 $1.01	Buy Now
Newark	IPP600N25N3GXKSA1	Bulk			1	1 $3.44 10 $2.24 100 $1.55 1000 $1.23 10000 $1.18	Buy Now
Rochester Electronics	IPP600N25N3GXKSA1		90		1	1 - 10 - 100 $1.37 1000 $1.14 10000 $1.01	Buy Now
Rutronik	IPP600N25N3GXKSA1	Tube	350		1	1 - 10 - 100 - 1000 $1.32 10000 $1.08	Buy Now

EBV Elektronik	IPP600N25N3GXKSA1			21 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	IPP600N25N3GXKSA1		5,623			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPB600N25N3GATMA1 Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IPB600N25N3GATMA1				1	1 $3.79 10 $2.48 100 $2.30 1000 $2.30 10000 $2.30	Get Quote
Avnet Americas	IPB600N25N3GATMA1	Tape & Reel		13 Weeks	1,000	1 - 10 - 100 - 1000 $1.44 10000 $1.30	Buy Now
Newark ()	IPB600N25N3GATMA1	Tape & Reel	135		100	1 - 10 - 100 $1.87 1000 $1.52 10000 $1.46	Buy Now
	IPB600N25N3GATMA1	Cut Tape	135		1	1 $4.07 10 $4.07 100 $1.87 1000 $1.52 10000 $1.46	Buy Now
	IPB600N25N3GATMA1	Tape & Reel			1,000	1 - 10 - 100 - 1000 $1.98 10000 $1.77	Buy Now
Rochester Electronics	IPB600N25N3GATMA1		157		1	1 - 10 - 100 $1.26 1000 $1.13 10000 $1.06	Buy Now
EBV Elektronik	IPB600N25N3GATMA1			52 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Win Source Electronics	IPB600N25N3GATMA1		7,530			1 - 10 - 100 $2.43 1000 $2.11 10000 $2.11	Buy Now
Infineon Technologies AG BSC600N25NS3GATMA1 Transistor: N-MOSFET; unipolar; 250V; 25A; 125W; PG-TDSON-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	BSC600N25NS3GATMA1				5,000	1 - 10 - 100 - 1000 - 10000 $1.94	Get Quote
Avnet Americas	BSC600N25NS3GATMA1	Tape & Reel		52 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $1.43	Buy Now
Newark ()	BSC600N25NS3GATMA1	Cut Tape	13,791		5	1 - 10 $2.77 100 $2.14 1000 $1.90 10000 $1.90	Buy Now
	BSC600N25NS3GATMA1	Tape & Reel	13,791		100	1 - 10 - 100 $2.14 1000 $1.90 10000 $1.90	Buy Now
	BSC600N25NS3GATMA1	Tape & Reel			5,000	1 - 10 - 100 - 1000 - 10000 $1.77	Buy Now
	BSC600N25NS3GATMA1	Tape & Reel			5,000	1 - 10 - 100 - 1000 - 10000 $1.82	Buy Now
Rochester Electronics	BSC600N25NS3GATMA1		543		1	1 - 10 - 100 $1.33 1000 $1.19 10000 $1.12	Buy Now
Ameya Holding Limited	BSC600N25NS3GATMA1		2,195			1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	BSC600N25NS3GATMA1			53 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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600N25N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BSC600N25NS3 G Abstract: 600N25NS IEC61249-2-21 JESD22 FS25 Contextual Info: 600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 60 mΩ ID 25 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant	Original	bsc600n25ns3 iec61249-2-21 600n25ns bsc600n25ns3 g +2jesd22 fs25	PDF
IEC61249-2-21 Abstract: JESD22 Contextual Info: 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 60 mΩ ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant	Original	ipd600n25n3 iec61249-2-21 pg-to252-3 600n25n +218ologies jesd22	PDF
600N25N Abstract: DD 127 D TRANSISTOR ds 290 14H IEC61249-2-21 JESD22 PG-TO220-3 IPI600N25N3 G Contextual Info: 600N25N3 G 600N25N3 G 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 60 mΩ ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ipb600n25n3 ipp600n25n3 ipi600n25n3 iec61249-2-21 +8pg-to263-3 pg-to220-3 pg-to262-3 600n25n dd 127 d transistor ds 290 14h jesd22 ipi600n25n3 g	PDF
Contextual Info: 600N25N3 G 600N25N3 G 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • 175 °C operating temperature	Original	ipb600n25n3 ipp600n25n3 ipi600n25n3 iec61249-2-21 +3pg-to263-3 pg-to220-3 pg-to262-3	PDF
600N25NS Contextual Info: 600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant	Original	bsc600n25ns3 iec61249-2-21 600n25ns	PDF
600N25N Contextual Info: 600N25N3 G 600N25N3 G 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ipb600n25n3 ipp600n25n3 ipi600n25n3 iec61249-2-21 +3pg-to263-3 600n25n pg-to220-3	PDF
IPD600N25N3 Abstract: F12a Contextual Info: 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant	Original	ipd600n25n3 iec61249-2-21 pg-to252-3 600n25n +1f12a	PDF
600N25N Abstract: IEC61249-2-21 JESD22 PG-TO220-3 Contextual Info: 600N25N3 G 600N25N3 G 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 60 mΩ ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ipb600n25n3 ipp600n25n3 ipi600n25n3 iec61249-2-21 +5pg-to263-3 pg-to220-3 pg-to262-3 600n25n jesd22	PDF
Contextual Info: 600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • Pb-free lead plating; RoHS compliant	Original	bsc600n25ns3 iec61249-2-21 600n25ns	PDF
Contextual Info: 600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant	Original	ipd600n25n3 iec61249-2-21 pg-to252-3 600n25n	PDF

600N25N Search Results

600N25N Price and Stock

Infineon Technologies AG BSC600N25NS3 G

Infineon Technologies AG IPD600N25N3 G

Infineon Technologies AG IPP600N25N3GXKSA1

Infineon Technologies AG IPB600N25N3GATMA1

Infineon Technologies AG BSC600N25NS3GATMA1

600N25N Datasheets Context Search

BSC600N25NS3 G

IEC61249-2-21

600N25N

600N25NS

600N25N

IPD600N25N3

600N25N