6001S Search Results

QM6001

Abstract: 6004ST diode jr 702 OM6002ST diode t25 4 L0 lateral mosfet audio amplifier OM6001ST OM6003ST OM6004ST OM6101ST
Contextual Info: 6001ST OM6003ST OM6101ST OM6103ST OM6002ST OM6004ST QM6102ST OM61Q4ST POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET With Or Without Zener Gate Clamp Protection FEATURES • • • • Isolated Hermetic Metal Package

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

GAL6001S30HB1

Abstract: GAL6001
Contextual Info: Æ 7 SGS-THOMSON ^ T # k 5 [LllM OKÜDÊi G 6001S E2PR0M CMOS PROGRAMMABLE LOGIC DEVICE • ELECTRICALLY ERASABLE CELL TECHNO LO G Y - Instantly reconfigurable logic - Instantly reprogram mable cells - Guaranteed 100% yields ■ HIGH PERFORMANCE E2CMOS TECHNOLOGY

w1 3005

Contextual Info: BH m H ¡MlgSgj WÊÈ•- f i l - ■j «OS-CON , Low Impedance fi High CV « Solvent Proof « +105°C Maximum Temperature The FP series is an OS-CON™ series w ith higher capacitance values per case size than the FA series. The higher c a p a c ita n c e values a llo w fo r a ve ry low im p e d a n ce , m aking th e se c a p a c ito rs ideal fo r

AL6001

Contextual Info: í w # d lld 'IIIU IV Ib Q N ^ 7 # . G A L 6 0 0 1 S RfflD [S©ll[Lll OT R!]D©i E2P R 0 M CMOS PROGRAMMABLE LOGIC DEVICE • ELECTRICALLY ERASABLE CELL TECHNOLOGY — Instantly reconfigurable logic — Instantly reprogrammable cells — Guaranteed 100% yields

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

QM6001

Contextual Info: 6001ST OM6003ST OM6101ST OM61Û3ST OM6002ST QM6004ST OM61Q2ST OM61Q4ST POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE 1 0 0 V T h r u 500V, Up To 14 A m p . N - C h a n n e l M O S F E T W it h Or W i t h o u t Z e n e r G a te C l a m p P r o t e c ti o n

al6001

Abstract: L6001 6001S-35
Contextual Info: / S T S G S -T H O M S O N ^ 7 # G A 6001S E2PROM CMOS PROGRAMMABLE LOGIC DEVICE • ELECTRICALLY ERASABLE CELL TECHNO LO G Y - Instantly reconfigurable logic - Instantly reprogram mable cells - Guaranteed 100% yields ■ HIGH PERFORMANCE E2CMOSTECHNOLOGY

RM50MA

Abstract: 6008S
Contextual Info: DIOTEC ELECTRONICS CORP Data Sheet No. BUDI-6000-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 60 AMP BUTTON DIODES Mechanical Specification FEATURES Features Void Free Vacuum Die Soldering For Maximum Mechanical Strength and Heat Dissipation

Contextual Info: DIOTEC ELECTRONICS CORP Data Sheet No. BUDI-6000-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES R PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE

TD6001S

Abstract: ET 191 la 78140 marking ALP 2N2322 thomson ms 250
Contextual Info: S G S-THOMSON 7ÖC D DD07tiB7 2N2322— ►2N2329 TD 5001 S - TD 6001 S SENSITIVE GATE THYRISTORS THYRISTORS SENSIBLES 7ÖC Û 7 Ô 3 7 lïiR M S l — 1.6 A / T c = 85°C • Operates directly from low signal sensitive gate . • • • V D R M = V r r m up to 600 V.

ic 2508

Contextual Info: CS1009 2.5 Volt Reference D e s c rip t io n The CS1009 is a precision trimmed 2.500V ±5mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatil­ ity. The tight reference tolerance is achieved by on-chip trimming

IM6100-IDL

Abstract: 7530-1 7570 pci IM6100-1IPL PC 10TB DX10 IM6100 IM6101 IM6102 IM6103
Contextual Info: IM 6100 CMOS 12 B it M icroprocessor n M ü fm GENERAL DESCRIPTION FEATURES T h e IM 6 1 0 0 is a fixed w o rd leng th, sing le w o rd instruction, p arallel tran sfer m icro processor using 1 2 -b it, tw o's c o m p le ­ m ent a rith m etic w h ich recog nizes th e in struction set of

Contextual Info: DIOTEC ELECTRONICS CORP Data Sheet No. BUDI-6000-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES R PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE

Contextual Info: DIOTEC ELECTRONICS CORP Data Sheet No. BUDI-6000-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES R PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE

Contextual Info: DIOTEC ELECTRONICS CORP Data Sheet No. BUDI-6000-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES R PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE

S107-05

Abstract: T0-202AA TD6001 2N2325 T0202 2N877 2N878 2N879 2N880 2N881
Contextual Info: 48 THYRISTORS SENSIBLES sensitive gate thyristors Valeurs limites Absolute max. ratings Caractéristiques électriques Electrical characteristiques V DWM •o TYPES V rsm ITSM 10ms Vq t V RWM A 0,5 A eff (rms) / 2N877 2N878 2N879 2N880 2N881 2N882 2N883

transistor c2027

Abstract: C2027 740L6000S transistor c2028
Contextual Info: QUALITY TECHNOLOGIES HIGH-SPEED LOGIC-TO-LOGIC OPTOCOUPLERS TTL BUFFER TTL INVERTER CMOS BUFFER CMOS INVERTER LSTTLto O P T Ó /L Ò G /C i TM ORDER INFORMATION PART NUMBER 740L6000S 6001S 740L6010S 740L6011S if fg J jP I|E S § LOGIC COMPATIBILITY INPUT

LT1009CZ

Abstract: LM136Z 1009C CS-1009CD8 CS-1009CZ CS-1009XD8 LM136 LT1009
Contextual Info: 2.5 Volt Reference Description The CS-1009 is a precision trimmed 2 500V ±5mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatil­ ity. The tight reference tolerance is achieved by on-chip trimming which minimizes voltage tolerance