JST137H-600G
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Jiangsu JieJie Microelectronics Co Ltd
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8A TRIAC in TO-251 package with 600V repetitive peak off-state and reverse voltage, suitable for AC switching applications requiring general purpose on/off control. |
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JST137D-600G
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Jiangsu JieJie Microelectronics Co Ltd
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8A TRIAC in TO-262 package with 600V repetitive peak off-state and reverse voltage, suitable for general purpose AC switching applications requiring phase control, motor speed regulation, and heating control. |
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JST137E-600G
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Jiangsu JieJie Microelectronics Co Ltd
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8A TRIAC in TO-263 package with 600V repetitive peak off-state and reverse voltage, suitable for AC switching applications including heating control, motor starting, and phase control circuits. |
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K2600G
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SUNMATE electronic Co., LTD
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Axial leaded silicon bilateral voltage triggered device in DO-15 package, with peak off-state voltage from 70 to 220 V, non-repetitive surge current up to 16.7 A, and operating junction temperature from -40 to +125 °C. |
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P600G
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SUNMATE electronic Co., LTD
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6.0A average rectified current axial leaded rectifier diode with 50 to 1000V reverse voltage range, 400A non-repetitive surge current, 1.0V forward voltage drop, and operating junction temperature from -50 to +150°C. |
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JST137K-600G
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Jiangsu JieJie Microelectronics Co Ltd
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8A TRIAC in TO-252 package with 600V repetitive peak off-state and reverse voltage, suitable for AC switching applications including heating control, motor speed control, and phase control circuits. |
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JST137F-600G
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Jiangsu JieJie Microelectronics Co Ltd
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8A TRIAC in TO-220F insulated package with 600V repetitive peak off-state and reverse voltage, suitable for AC switching applications requiring 8A RMS on-state current and 2000V RMS insulation. |
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JST137C-600G
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Jiangsu JieJie Microelectronics Co Ltd
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8A TRIAC in TO-220C package with 600V repetitive peak off-state and reverse voltage, suitable for AC switching applications requiring general purpose phase control. |
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K2600G
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Jiangsu JieJie Microelectronics Co Ltd
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Silicon bilateral voltage triggered switch with high power-handling capability, available in breakover voltages from 80V to 270V, 1.0A RMS on-state current, and surge current up to 16.7A, housed in DO-15 package. |
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SIM7600G-H-PCIE
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SIMCom
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Mini PCIe LTE-FDD/LTE-TDD/HSPA+/UMTS/EDGE/GPRS/GSM module with LTE CAT4 support up to 150Mbps downlink and 50Mbps uplink, operating temperature -40C to +85C, dimensions 50.8x31x5.35mm, weight 12.6g, voltage 3.0V to 3.6V. |
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JST137H-600G
