6.2B Search Results

Contextual Info: UNCONTROLLED DOCUMENT REV, 6 .3 0 PIN 1 4 ,5 0 [0 .2 4 8 ] [0 ,1 7 7 ] A B PIN L2 C PART NUMBER REV. LDM — 0 7 4 5 7 N I c E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #10BRDR. 7.12 .99 E.C.N. #10BRDR. & REDRAWN IN 3D. E.C.N. #1 1 1 4 8 . 03.21.07 6.2B.03

Z6.8B

Abstract: Z12B Z9.1B DIODE Z8.2B Z6.2B C1Z10B C1Z11B C1Z12B C1Z13B C1Z14B
Contextual Info: CENTRAL SEMICONDUCTOR n a “n t a qddqeöi 1 WATT ZENER DIODE CSBafiFi9l r S0oiiie@si&]eigt'@r €@pp, S in fr a l 6 .2 -2 0 0 VOLTS, 5% semlcpitäluetor Sorp, AXIAL LEAD D015 EPOXY CASE Central semiconductor Corp. C1Z 6.2B SERIES 145 Adams Avenue Hauppauge, New York 1 17 88

200D

Abstract: 20D0 C175 DOT matrix LED rgb display full
Contextual Info: UNCO NTRO LLED DO CUM ENT REV. A PIN 22 PIN 12 ooop ooooo ooooo ooooo ooooo ooooo ooob 8 .4 0 [0 .3 3 1 ] 5 .6 0 PART NUMBER REV. LDM-21 24757NI A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & REDRAWN IN 3D. DATE 6.2B.03 [0 .2 2 0 ] H— I— I— I— I— I— I— I— I— I-

Contextual Info: UNCONTROLLED DOCUMENT REV, 4.50 [0.177] 6.30 [0 .2 4 8 ] PIN 1 A B PIN L2 OTOOOIO OOOOP OOOOp OOOOp opoop 17,80 [0,701] REV. LDM —07457MI B E.C.N. NUMBER AND REVISION COMMENTS 7.12 .99 E.C.N. #10BRDR. & REDRAWN IN 3D. 6.2B.03 PARAMETER MIN PEAK WAVELENGTH

Contextual Info: UNCONTROLLED DOCUMENT REV, 6 .3 0 [ 0 . 2 4 8 ] PIN 1 4,50 [0 ,1 7 7 ] A B PIN L2 C PART NUMBER REV. LDM — 0 7 4 5 7 N I c E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #10BRDR. 7.12 .99 E.C.N. #10BRDR. & REDRAWN IN 3D. E.C.N. #1 1 1 4 8 . 03.21.07 6.2B.03

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. LDM 07457N I B — PIN 1 REV, A B 4,50 [0,177] 6.30 [0 .24 8 ] PIN L2 E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. E.C.N. #10BRDR. & REDRAWN IN 3D. DATE 7.1 2 .99 6.2B .03 OTOOOIO OOOOP OOOOp OOOOp 17,80 [0,701]

Z9.1B

Abstract: Z62B Z6.2B Z8.2B Z82B Z6.8B CBR-12 DIODE Z8.2B z91b Z6,2B
Contextual Info: CENTRAL SEM ICOND UC TO R *~ t3 1 WATT ZENER DIODE CSBIfiFial S0Oiiie@si&]eigt'@r €@pp, S in fr a l 6 .2 -2 0 0 VOLTS, 5% semlcpitäluetor Corp. Central semiconductor Corp. AXIAL LEAD D015 EPOXY CASE C1Z 6.2B SERIES 145 Adams Avenue Hauppauge, New York 1 17 88

Contextual Info: UNCONTROLLED DOCUMENT REV, 6 .3 0 PIN 1 4 ,5 0 [ 0 .2 4 8 ] [ 0 ,1 7 7 ] A B PIN L2 C PART NUMBER REV. LDM — 0 7 2 5 7 N I c E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #10BRDR. 7.12 .99 E.C.N. #10BRDR. & REDRAWN IN 3D. E.C.N. #1 1 1 4 8 . 03.21.07 6.2B.03

C175

Contextual Info: UNCONTROLLED DOCUMENT REV. A PIN 14 8,40 [0,331] 1 o9 o k oo ooo h+ LDM —2 1 6 5 7 N I A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & REDRAWN IN 3D. DATE 6.2B.03 h— 4,50 [0,177] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X ~\ REV. P IN r 1 I PART NUMBER

Contextual Info: UNCONTROLLED DOCUMENT REV, 6 .3 0 PIN 1 4 ,5 0 [ 0 .2 4 8 ] [ 0 ,1 7 7 ] A B PIN L2 C PART NUMBER REV. LDM — 0 7 2 5 7 N I c E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #10BRDR. 7.12 .99 E.C.N. #10BRDR. & REDRAWN IN 3D. E.C.N. #1 1 1 4 8 . 03.21.07 6.2B.03

07257MI

Contextual Info: UNCONTROLLED DOCUMENT REV, 6 .3 0 PIN 1 A B PIN L2 OTOOOIO OOOOP OOOOp OOOOp opoop dooob PIN 6 4,50 [0,177] [0 .2 4 8 ] 17,80 [0,701] PART NUMBER REV. LDM —07257MI B E.C.N. NUMBER AND REVISION COMMENTS 7.12 .99 E.C.N. #10BRDR. & REDRAWN IN 3D. 6.2B.03 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C

Contextual Info: UNCONTROLLED DOCUMENT REV, 4.50 [0.177] 6.30 [0 .2 4 8 ] PIN 1 A B PIN L2 OTOOOIO OOOOP OOOOp OOOOp opoop 17,80 [0,701] REV. LDM —07457MI B E.C.N. NUMBER AND REVISION COMMENTS 7.12 .99 E.C.N. #10BRDR. & REDRAWN IN 3D. 6.2B.03 PARAMETER MIN PEAK WAVELENGTH

Contextual Info: UNCONTROLLED DOCUMENT REV, 6 .3 0 [ 0 . 2 4 8 ] PIN 1 4,50 [0 ,1 7 7 ] A B PIN L2 C PART NUMBER REV. LDM — 07357NI c E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #10BRDR. 7.12 .99 E.C.N. #10BRDR. & REDRAWN IN 3D. ECN #1114B. 03.21.07 6.2B.03 OTOOOIO OOOOP

Contextual Info: PTZ15B Diodes Zener diode PTZ15B zApplications zDimensions Unit : mm zLand size figure (Unit : mm) Voltage regulation 2.0 ② 0.1±0.02 0.1 4.2 5.0±0.3 1.2±0.3 4.5±0.2 ① zFeatures 1) Small power mold type. (PMDS) 2) High ESD tolerance 2.0

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER LDM—07257MI REV, 4,50 [0,177] 6.30 [0 .2 4 8 ] PIN 1 A B PIN L2 C OTOOOIO OOOOP OOOOp OOOOp dooob o P IN 6 p o o REV. 17,80 [0,701] E.C.N. NUMBER AND REVISION COMMENTS 7.12.99 E.C.N. # 10BR D R . & REDRAWN IN 3D. E.C.N. # 1 1 1 4 8 .

VDZ18B

Contextual Info: VDZ18B Diodes Zener diode VDZ18B zApplication Voltage regulation zExternal dimensions Unit : mm zLand size figure (Unit : mm) 0.5 0.13±0.03 0.5 0.6±0.05 1.4±0.05 1.0±0.05 1.2 zFeatures 1) Ultra small mold type (VMD2). 2) High reliability. 3) By chip-mounter, automatic mounting

Contextual Info: Zener diode UDZS15B Dimensions Unit : mm 1.25±0.1 Land size figure (Unit : mm) 0.1±0.1 0.05 0.8MIN. 0.9MIN. 2.5±0.2 1.7±0.1 Features 1) Compact, 2-pin mini-mold type for high-density mounting. (UMD2) 2) High reliability. 3) Can be mounted automatically,

Si7489DP

Abstract: Si7489DP-T1-E3 Si7489DP-T1-GE3
Contextual Info: Si7489DP Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.041 at VGS = - 10 V - 28 0.047 at VGS = - 4.5 V - 28 VDS (V) - 100 Qg (Typ.) 54 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

zener f 24 8b

Contextual Info: Zener Diode EDZ6.8B Dimensions Unit : mm Applications Constant voltage control 0.8±0.05 Land size figure (Unit : mm) 0.12±0.05 0.6 0.8 Construction Silicon epitaxial planer 1.6±0.1 1.2±0.05 1.7 Features 1)2-pin ultra mini-mold type for high-density

DIODE 0536

Abstract: Si7738 Si7738DP Si7738DP-T1-E3
Contextual Info: New Product Si7738DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 150 0.038 at VGS = 10 V 30 35 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested

EDZ16B

Contextual Info: Zener Diode EDZ16B Dimensions Unit : mm Applications Constant voltage control 0.8±0.05 Land size figure (Unit : mm) 0.12±0.05 0.6 0.8 Construction Silicon epitaxial planer 1.6±0.1 1.2±0.05 1.7 Features 1)2-pin ultra mini-mold type for high-density

Contextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

wt32

Abstract: bv32 STM PRODUCTS REL4 WT21 FR30 MB91101 MB91103 QFP-100 st microelectronics Transistor "" space vecter PWM
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM71-10102-1E FR30 32-BIT MICROCONTROLLER MB91101 SERIES HARDWARE MANUAL PREFACE n Objectives and Intended Readership The MB91101 was developed as a product in the FR30 family of 32-bit, single-chip microcontrollers. The MB91101 contains a new RISC architecture CPU core and is suitable for

DTB 0124 DP

Abstract: 4825B CD0001 0549F 8342H F2MC-16 F2MC-16F PS8713
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM42-00101-2E F2MC-16F 16-BIT MICROCONTROLLER MB90200 SERIES PROGRAMMING MANUAL PREFACE • Objectives and intended readership Fujitsu’s MB90200 series is a lineup of 16-bit single-chip microcontrollers which can be provided