6.2A 600V IRF Search Results

IRFBc40

Abstract: transistor irfbc40 4A,600V IRFBC42 TB334 TA17426
Contextual Info: IRFBC40, IRFBC42 Semiconductor 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

MOSFET TEST SIMPLE Procedures

Abstract: Simple test MOSFET Procedures 4A,600V IRFAC40 IRFAC42 TB334
Contextual Info: IRFAC40, IRFAC42 Semiconductor 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 • 6.2A and 5.4A, 600V Description • rDS ON = 1.2Ω and 1.6Ω These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFBC40 Semiconductor Data Sheet July 1999 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: PD-91885A International IOR Rectifier SMPS MOSFET IRFBC40A HEXFET Power MOSFET A pplications • • • Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching V dss 600V Rds(on) max Id 1.2£2 6.2A B e n efits • Low Gate Charge Qg results in Simple

600V 2A MOSFET N-channel

Abstract: transistor irfbc40 IRFBC40 irfbc40 free download TB334
Contextual Info: IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRFAC40R

Abstract: MOSFET IRF VDs 600v RG-910 IRFAC42R irfac-types FAC42
Contextual Info: Rugged Power MOSFETs IRFAC40R, IRFAC42R File Num ber 2 1 5 6 Avalanche-Energy-Rated N-Channel Power MOSFETs 6.2A and 5.4A, 600V fDsion = 1.20 and 1.60 N-CHANNEL ENHANCEMENT MODE Features: • Repetitive Avalanche Ratings m Sim ple Drive R equirem ents ■ Ease o f Paralleling

irf 940

Abstract: IRFAC40 TO-204AA
Contextual Info: PD - 90587 IRFAC40 600V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAC40 BVDSS RDS(on) ID 600V 1.2Ω 6.2Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: MASS45E International tor Rectifier 001 • IN R PD-9.506B IRFBC40 INTERNATIONAL R E C T I F I E R H EXFEr Power M O S FE T • • • • • O O lM ' îb e Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

IRFBC40A

Contextual Info: PD -91885A IRFBC40A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

Contextual Info: PD - 94986 SMPS MOSFET IRFBC40APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

F53 DIODE

Abstract: AN-994 IRFBC40 IRFBC40L IRFBC40S "thermal via" PCB D2PAK
Contextual Info: PD - 91016A IRFBC40S/L HEXFET Power MOSFET l l l l l l l Surface Mount IRFBC40S Low-profile through-hole (IRFBC40L) Available in Tape & Reel (IRFBC40S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 600V

Contextual Info: International USSR Rectifier po-mois IRFBC40S/L PRELIMINARY HEXFET Power MOSFET • Surface Mount IRFBC40S • Low-profile through-hole (IRFBC40L) • Available in Tape & Reel (IRFBC40S) • Dynamic dv/dt Rating • 150°C Operating Temperature • Fast Switching

irfbc40

Contextual Info: HE D I MÛ55452 GODÖLSG 1 | Data Sheet No. PD-9.506A INTERNATIONAL RE CT I F I E R INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFBC40 IRFBC4S N-CHANNEL 600 Volt, 1.2 Ohm HEXFET TO-220AB Plastic Package Product Summary

Contextual Info: PD - 91016A IRFBC40S/L HEXFET Power MOSFET l l l l l l l Surface Mount IRFBC40S Low-profile through-hole (IRFBC40L) Available in Tape & Reel (IRFBC40S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 600V

Contextual Info: PD -91885A IRFBC40A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

IRFBG40

Abstract: D10008 INTERNATIONAL RECTIFIER IRFBC40
Contextual Info: International 3X3R Rectifier pd-9.ioi6 IRFBG40S/L p r e lim in a r y HEXFET Power MOSFET • Surface Mount IRFBC40S • Low-profile through-hole (IRFBC40L) • Available in Tape & Reel (IRFBC40S) • Dynamic dv/dt Rating • 150°C Operating Temperature

YW 431

Abstract: AN-994 IRFBC40A IRFBC40AS
Contextual Info: PD- 91897A SMPS MOSFET IRFBC40AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

IRFBC40

Abstract: INTERNATIONAL RECTIFIER IRFBC40
Contextual Info: International S Rectifier PD-9.506B IRFBC40 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V Ds s = 6 0 0 V *DS on l D = 6 .2 A Description DATA SHEETS

Contextual Info: 4 fi5 5 4 5 2 International i»r Rectifier SOQ M I N R PD-9.852 IRFIBC40G IN T E R N A T IO N A L HEXFET P o w e r M O S F E T • • • • • 0015250 R E C T IF IE R Isolated Package High Voltage lsolation= 2.5K VR M S Sink to Lead Creepage Dist.= 4.8mm

IRFPC40

Contextual Info: IRFPC40 Data Sheet January 2002 6.8A, 600V, 1.200 Ohm, N-Channel Power MOSFET Features • 6.8A, 600V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: PD- 91897A SMPS MOSFET IRFBC40AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

IRFPC40

Abstract: MOSFET 1052 INTERNATIONAL RECTIFIER 3Y
Contextual Info: PD-9.511B International ësr] Rectifier IRFPC40 HEXFET P ow er M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements 600V V p s s - ^D S on - 1 lD = 6.8A

Contextual Info: International h?r Rectifier IRFPC40 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • PD-9.511B 4Û55452 DOlSSbfi 0=13 • INR Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

MOSFET IRF 570

Abstract: IRFBC40R MOSFET IRF 940 6.2a 600v irf IRFBC42R IRF N-Channel Power MOSFETs irf mosfets gj6b 360VX
Contextual Info: . Rugged Power MOSFETs File N u m be r IRFBC40R, IRFBC42R 2157 Avalanche-Energy-Rated N-Channel Power MOSFETs 6 .2A and 5.4A, 600V rbston ~ 1-20 and 1.60 N-CHANNEL ENHANCEMENT MODE Features: • Repetitive Avalanche Ratings m Simple Drive Requirements • Ease o l Paralleling