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618A100TR
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BI Technologies
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Resistor: Thick Film: 10: 2%: ISOL: 16DIP: T/R |
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PDF
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51.01KB |
4 |
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618A101TR
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BI Technologies
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Resistor: Thick Film: 100: 2%: ISOL: 16DIP: T/R |
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PDF
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51.01KB |
4 |
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618A102TR
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BI Technologies
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Resistor: Thick Film: 1K: 2%: ISOL: 16DIP: T/R |
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PDF
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51.01KB |
4 |
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618A103TR
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BI Technologies
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Resistor: Thick Film: 10K: 2%: ISOL: 16DIP: T/R |
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PDF
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51.01KB |
4 |
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618A104TR
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BI Technologies
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Resistor: Thick Film: 100K: 2%: ISOL: 16DIP: T/R |
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PDF
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51.01KB |
4 |
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618A105TR
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BI Technologies
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Resistor: Thick Film: 1M: 2%: ISOL: 16DIP: T/R |
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PDF
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51.01KB |
4 |
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618A112TR
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BI Technologies
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Resistor: Thick Film: 1.1K: 2%: ISOL: 16DIP: T/R |
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PDF
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51.01KB |
4 |
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618A113TR
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BI Technologies
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Resistor: Thick Film: 11K: 2%: ISOL: 16DIP: T/R |
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51.01KB |
4 |
VS4618AH
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VANGUARD
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40V/8A N-Channel Advanced Power MOSFET with 14 mΩ typical RDS(on) at VGS=10V, 20 mΩ at VGS=4.5V, available in SOT23-6L package, suitable for 5V logic level control and fast switching applications. |
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PDF
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VS4618AP
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VANGUARD
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40V/45A N-Channel Advanced Power MOSFET with 9.6 mΩ typical RDS(on) at VGS=10V, 15 mΩ at VGS=4.5V, available in PDFN5x6 package, suitable for logic level control and high-efficiency power applications. |
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PDF
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VS3618AH
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VANGUARD
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30V/8A N-Channel Advanced Power MOSFET in SOT23-6L package with 9.5 mΩ typical RDS(on) at VGS=10V, suitable for high-efficiency switching applications. |
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PDF
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VS3618AP
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VANGUARD
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30V/54A N-Channel Advanced Power MOSFET with RDS(on) of 5.4 mΩ at VGS=10V, available in PDFN5x6 package, designed for high-efficiency power management applications requiring low on-resistance and fast switching performance. |
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PDF
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VS3618AE
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VANGUARD
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30V/32A N-Channel Advanced Power MOSFET with 6.4 mΩ RDS(on) at VGS=10V, 8.8 mΩ at VGS=4.5V, 50 A silicon-limited current, and 30 W power dissipation in a PDFN3333 package. |
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VS3618AD
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VANGUARD
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30V/70A N-Channel Advanced Power MOSFET with 5.8 mΩ RDS(on) at VGS=10V, TO-252 package, suitable for high-efficiency power switching applications requiring low on-resistance and fast switching performance. |
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PDF
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VS4618AS
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VANGUARD
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40V/14A N-Channel Advanced Power MOSFET with 10.5 mΩ typical RDS(on) at VGS=10V, 17 mΩ at VGS=4.5V, housed in SOP8 package, suitable for 5V logic level gate drive applications. |
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PDF
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VS3618AS
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VANGUARD
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30V/16A N-Channel Advanced Power MOSFET with low on-resistance of 6.6 mΩ at VGS=10V, 9.6 mΩ at VGS=4.5V, housed in SOP8 package, suitable for 5V logic level control and high-efficiency power applications. |
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PDF
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VS4618AE
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VANGUARD
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40V/43A N-Channel Advanced Power MOSFET with low on-resistance of 10 mΩ at VGS=10V, available in PDFN3333 package, suitable for 5V logic level control and high-efficiency power switching applications. |
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PDF
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VS4618AS-AP
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VANGUARD
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45V/14A N-Channel Advanced Power MOSFET with 12 mΩ RDS(on) at VGS=10V, 18 mΩ at VGS=4.5V, SOP8 package, suitable for high-efficiency switching applications. |
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PDF
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VS4618AH
