6 WATTS RESISTOR Search Results

Contextual Info: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and

re 10019

Abstract: 10019
Contextual Info: ERICSSON í PTE 10019* 63 Watts, 8 6 0 - 9 6 0 MHz L D M O S Field Effect Transistor Description The 10019 is an internally matched comm on source N-channel enhancement-mode lateral MOSFET intended for cellular and GSM applications in the 860 to 960 MHz range. It is rated at 63 watts minimum

PTE10026

Contextual Info: E R IC SSO N í PTE 10026* 6 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation

Transistor AC 51 0865 75 834

Abstract: ATC 1084 fe 5571 AC 51 0865 Transistor AC 51 0865 75 730 ic atc 1084 PTE 10011 Ericsson
Contextual Info: E R IC SSO N í PTE 10011* 6 Watts, H F - 1 . 5 GHz L D M O S Field Effect Transistor Description The 10011 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation

LDO06C-005W05-SJ

Abstract: LDO06C LDO06C-005W05-HJ LDO06C-005W05-VJ
Contextual Info: Embedded Power for Business-Critical Continuity SXX06E Rev. 08.01.06 Page 1 of 2 Rev. 09.03.08 LDO06C 1 of 4 LDO06C Series 30 Watts Total Power: 30 Watts Input Voltage: 3-13.8 Vdc No. of Outputs: Single Electrical Specifications Output Special Features • 6 A output current rating

transistor c1213

Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 1606 mosfet
Contextual Info: ERICSSON í PTE 10036* 85 Watts, 8 6 0 - 9 0 0 MHz L D M O S Field Effect Transistor Description The 10036 is an internally matched, common source n-channel, enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 85 watts minimum output

Contextual Info: pouier-nne DFA20 SERIES DESCRIPTION FEATURES T h e com pact, dual output D F A 20 series provides power densities • Remote ON/OFF and TRIM up to 11 watts per cubic inch 0 ,6 7 watts per cm ^ . Ideal for b a t' • Water Washable Case • Overcurrent Protection and Thermal Shutdown

Contextual Info: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors

ge 925

Abstract: atc 17-25
Contextual Info: E R IC SSO N í PTE 10020* 120 Watts, 9 2 5 - 9 6 0 MHz L D M O S Field Effect Transistor Description The 10020 is an internally matched comm on source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 925 to 960 MHz. It is rated at 120 watts minimum

1000US

Abstract: LC01-6 SRDA05-4
Contextual Info: LC01-6 Low Capacitance TVS for High-Speed Telecommunication Systems PROTECTION PRODUCTS Description Features u 1500 watts peak pulse power tp = 10/1000µs u Transient protection for high speed data lines to The LC01-6 transient voltage suppressor is designed to

schematic diagram lightning protection

Abstract: crowbar TVS Diode cross Thyristor pulse transformer LC01-6 SRDA05-4 SO-16W P200-A
Contextual Info: LC01-6 Low Capacitance TVS for High-Speed Telecommunication Systems PROTECTION PRODUCTS Description Features ‹ 1500 watts peak pulse power tp = 10/1000µs ‹ Transient protection for high speed data lines to The LC01-6 transient voltage suppressor is designed to

Contextual Info: FA8025 series new 2/6/03 3:58 pm Page 1 Fusible Metal Film Resistors Welwyn Components FA8025 series • Predictable fusing characteristics • Flameproof protection Electrical Data FA8225 FA8325 FA8425 Power rating at 70°C watts 0.25 0.5 1.5 Resistance range

transorb application note

Abstract: transorb 24v
Contextual Info: UWR Models www.murata-ps.com Single Output, High-Density, 6 Amp/15 Watt DC/DC Converters Typical units PRODUCT OVERVIEW PR FEATURES  1.2-2.5VOUT models source 6 Amps  3.3VOUT models source 4.25 Amps  5/12/15VOUT models deliver full 15 Watts

Contextual Info: GOLDMOS PTF 10111 Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization

Resistors 5 watt ceramic radial

Abstract: little devil 5 watts ceramic resistor mil grade resistors carbon resistor 1 watt
Contextual Info: Specifying Guide Manufacturing Company Page s Axial Lead Resistors 2-3 RW, RP, RF Power Resistors, 0.8-3.5 Watts S Series Thick Film Chip Resistors, 1/io-1 Watt Cabinet Resistor Assortments 4-6 7-8 9 Surface Mount Resistors Resistors/Non- Wirewound_

Silicon Power Transistor DPAK MJD42c

Abstract: 369D
Contextual Info: MJD41C NPN MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS

A 1458 OPTO

Abstract: 86C14 6A 1176 UWR-3.3/4250-D48A
Contextual Info: ® INNOVATION and EXCELLENCE Single Output A-Series, UWR Models High-Density, 2" x 1" 6 Amp/15 Watt, 1.2-15VOUT DC/DC's A-SERIES Features • 1.2-2.5VOUT models source 6 Amps ■ 3.3VOUT models source 4.25 Amps ■ 5/12/15VOUT models deliver full 15 Watts

0221l

Abstract: 57-TYP
Contextual Info: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold

A 1458 OPTO

Abstract: 15-WATT SPECS SHEET
Contextual Info: ® INNOVATION and EXCELLENCE Single Output A-Series, UWR Models High-Density, 1" x 2" 6 Amp/15 Watt, 1.2-15VOUT DC/DC's A-SERIES Features • 1.2-2.5VOUT models source 6 Amps ■ 3.3VOUT models source 4.25 Amps ■ 5/12/15VOUT models deliver full 15 Watts

D-12A

Contextual Info: UWR Models www.murata-ps.com Single Output, High-Density, 6 Amp/15 Watt DC/DC Converters Typical units PRODUCT OVERVIEW PR FEATURES „ 1.2-2.5VOUT models source 6 Amps „ 3.3VOUT models source 4.25 Amps „ 5/12/15VOUT models deliver full 15 Watts „ Synchronous-rectifier topologies

Contextual Info: MNRS Series Chip Shunt Resistor • • • • • Resistances from 1 mOhm to 4 mOhm Power Rating up to 6 Watts Resistance Tolerances to ± 1% TCR’s to ±100 ppm/°C Excellent long-term stability and low inductance SPECIFICATIONS Type MNRS1050 MNRS1575

Silicon Power Transistor DPAK MJD42c

Abstract: data sheet tip41 file type 369D MJD41C MJD41CRL MJD41CT4 MJD42C MJD42C1 TIP41 TIP42
Contextual Info: MJD41C NPN MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS

3000-D48ACT-30770

Abstract: LUCENT 48v to 5v dc schematic
Contextual Info: Single Output A-Series, UWR Models High-Density, 1" x 2" 6 Amp/15 Watt, 1.2-15VOUT DC/DC's A-SERIES Features • 1.2-2.5VOUT models source 6 Amps ■ 3.3VOUT models source 4.25 Amps ■ 5/12/15VOUT models deliver full 15 Watts ■ Synchronous-rectifier topologies

Resistor 0R1 5W

Contextual Info: FM series new 2/6/03 3:56 pm Page 1 Fusible Metal Film Resistors Welwyn Components FM Series • Predictable fusing characteristics • Flameproof protection Electrical Data FM1/4 FM1/2 FM1 Power rating at 70°C watts 0.25 0.5 1.0 Resistance range ohms 0R1 - 10K