6 TRANSISTOR ARRAY SOURCE Search Results

Contextual Info: 4 -U n it 400m A Transistor Array IR2C26 • IR 2C26 4-Unit 400mA Transistor Array Pin Connections Description The IR 2 C 2 6 is a 4 -circuit d rive r IC, which con­ sists of an input in verter and a current source type output section. The output section is composed of a

Contextual Info: G E SOLID STATE 01 D E | 36 75 0 6 1 ODlMtES 7 | _ Arrays CA3097 Thyristor/Transistor Array For Military, Commercial, and Industrial Applications Features: • Complete isolation between elements m n-p-n transistor - VCeo = 30 V min. Ic = 100 mA (max.)

M54563P

Contextual Info: M IT S U B IS H I BIPOLAR DIGITAL ICs M54563P 8-UNlT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY W ITH CLAM P DIODE DESCRIPTION The M54563P, 8-channel source driver, is designed for use PIN CONFIGURATION TOP VIEW with + 6 to + 1 6 V M O S logic systems.

M2981P

Abstract: M2981 24v 8 channel Relay driver 8-channel NPN darlington array
Contextual Info: MITSUBISHI ELEK -CLINEAR> t>2 ^i| ~]~-<{3>-2<S ; ^ bSMTÖSb QQ04112 3 INDUSTRY STANDARD IND LINEAR ICs MITSUBISHI M2981 SEMICONDUCTORS 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION The M2981, 8-channel source driver, is designed for use with + 6 to

td62782

Contextual Info: SILICON MONOLITHIC BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62781AP/F/AF TD62782AP/F/AF 8CH HIGH-VOLTAGE SOURCE DRIVER The T D 6 2 7 8 1 A P /F/A F Series are comprised of eight source current Transistor Array. These drivers are specifically designed for fluorescent

ON SEMICONDUCTOR J122

Abstract: MRF9002NR2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array

J133 mosfet transistor

Abstract: transistor j239 MRF9002NR2 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array

MRF9002NR2

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array

transistor A62

Abstract: 9709K darlington buffer array A634 DIP18 S0P16 BA12003 A6257 sink 8 low darlington array BA614
Contextual Info: lumm Transistor array Number Output Max.vdtage Output current mA of CHS (V) BA612 5 BA6256 B A664 6 BA13001F hput/output type Input active Output current Circuit level construction type Package Feature 24 450 25 Invert H Sink Darlington DIP14 24 100 25 Invert

Contextual Info: TD62781,782AP/F/AF T O SH IB A TO SH IBA BIPO LAR D IGITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TD62781AP, TD62781F, TD62781AF TD62782AP, TD62782F, TD62782AF 8CH HIGH-VOLTAGE SOURCE DRIVER The T D 6 2 7 8 1 A P /F /A F Series are comprised of eight source current Transistor Array.

mosfet array vgs 5v 2A

Abstract: MO-169 HIP0061 HIP0061AS2 MO-169AC diode 3982
Contextual Info: HIP0061 S E M I C O N D U C T O R 60V, 3.5A, 3-Transistor Common-Source ESD Protected Power MOSFET Array March 1995 Features Package JEDEC MO-169 • Three 3.5A Power MOS N-Channel Transistors 7 DRAIN3 6 GATE3 5 DRAIN2 4 SOURCE 3 GATE2 2 DRAIN1 1 GATE1 • Output Voltage to 60V

TPIC1505

Contextual Info: TPIC1505 QUAD AND HEX POWER DMOS ARRAY SLIS058 – JUNE 1996 D D D D Low rDS on : 0.25 Ω Typ (Full H-Bridge) 0.35 Ω Typ (Triple Half H-Bridge) Pulsed Current: 6 A Per Channel (Full H-Bridge) 4 A Per Channel (Triple Half H-Bridge) Matched Sense Transistor for Class A-B

TPIC1505

Contextual Info: TPIC1505 QUAD AND HEX POWER DMOS ARRAY SLIS058 – JUNE 1996 D D D D Low rDS on : 0.25 Ω Typ (Full H-Bridge) 0.35 Ω Typ (Triple Half H-Bridge) Pulsed Current: 6 A Per Channel (Full H-Bridge) 4 A Per Channel (Triple Half H-Bridge) Matched Sense Transistor for Class A-B

Contextual Info: TPIC1505 QUAD AND HEX POWER DMOS ARRAY SLIS058 – JUNE 1996 D D D D Low rDS on : 0.25 Ω Typ (Full H-Bridge) 0.35 Ω Typ (Triple Half H-Bridge) Pulsed Current: 6 A Per Channel (Full H-Bridge) 4 A Per Channel (Triple Half H-Bridge) Matched Sense Transistor for Class A-B

16PIN

Abstract: IEI-1213 MEI-1202 UPA1604 DD 127 D transistor
Contextual Info: DATA SHEET N E C COMPOUND FIELD EFFECT POWER TRANSISTOR r i — I 9 H I ¿ ¿ P A 1 6 4 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The ¿uPA1604 is M onolithic N-channel Pow er M O S FET A rray that built CONNECTION DIAGRAM in 4 circuits, Clump Diode and resistances designed for LED, Relay,

M54563WP

Abstract: 24 V pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY pnp 8 darlington array pnp 8 transistor array ttl
Contextual Info: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54563WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563WP is eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit

Contextual Info: <TRANSISTOR ARRAY> M63840KP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform

DARLINGTON TRANSISTOR ARRAY

Contextual Info: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high

Contextual Info: <TRANSISTOR ARRAY> M54563FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54563FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high

M54563FP

Contextual Info: <TRANSISTOR ARRAY> M54563FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54563FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high

Contextual Info: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform

Contextual Info: <TRANSISTOR ARRAY> M63840KP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform

pnp DARLINGTON TRANSISTOR ARRAY

Abstract: M54562WP 7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode
Contextual Info: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54562WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit

DARLINGTON TRANSISTOR ARRAY

Contextual Info: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform