6 A10 TL Search Results

ICE3A1065L

Abstract: ICE3A1565L ICE3B0365L surge lightning to smps ICE3A1065l equivalent transistor Triggered spark gap diode C10 325KT ICE3B0365 INFINEON PART MARKING
Contextual Info: Version 2.0, 8 May 2006 CoolSET -F3 ICE3 B03 6 5 L ICE3 A10 6 5 L ICE3 A15 6 5 L Off-Line SMPS Current Mode Controller with integrated 650V Startup Cell/Depletion CoolMOS™ and Latched off Mode Power Management & Supply N e v e r s t o p t h i n k i n g .

IEEE1284-I

Abstract: IEEE1284-II SN74LVC161284
Contextual Info: SN74LVC161284 19-BIT BUS INTERFACE WITH 3-STATE OUTPUTS SCAS583C - NOVEMBER 1 9 9 6 - REVISED FEBRUARY 1997 DGG OR DL PACKAGE TOP VIEW 1.4-kQ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors [ A9 [ A10 [ A11 [

Contextual Info: IDT71256SA70PE-TL IL08 C-MOS 256 K 32,768 x 8 -BIT STATIC RAM —TOP VIEW— 10 A14 IN 1 VDD (+5 V) 28 A0 9 A1 8 A12 IN 2 27 WE IN A2 7 6 A7 IN 3 26 A13 IN 5 4 A6 IN 4 25 A8 IN 3 25 A5 IN 5 24 A9 IN 24 21 A4 IN 6 23 A11 IN 23 7 22 OE IN 8 21 A10 IN A1 IN

Contextual Info: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SMD 5962-94611 (Military Pinout)

A1712

Abstract: AN651 Si4684-A10 SI4684
Contextual Info: Si 4 6 8 4 - A10 S INGLE - CHIP , F M / D A B /D AB + R ADIO R ECEIVER Features     Worldwide FM band support 76–108 MHz Advanced RDS/RBDS decoder DAB, DAB+ Band III support (168–240 MHz) Supports WorldDMB Receiver Profiles 1 and 2 OFDM channel demodulator

5962-9461109haa

Abstract: 5962-9461108HAA 5962-9461110HMA 5962-9562408HNC 5962-9461109HMA
Contextual Info: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SMD 5962-94611 & 5962-95624 (Military Pinout)

AS8S512K3

Abstract: 5962-9461109HMX
Contextual Info: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SMD 5962-94611 (Military Pinout)

SN74ALVCH16500

Contextual Info: SN74ALVCH16500 18-BIT UNIVERSAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS SCES023 - JULY 1995 DGG OR DL PACKAGE crop v ie w OEAB LEAB A1 GND A2 [ [ [ [ [ 1 2 3 4 5 U A3 [ 6 VCc [ 7 8 9 10 11 12 13 A9 [ 14 A10 [ 15 A11 [ 16 A12 [ 17 GND [ 18 A4 A5 A6 GND A7 A8

Contextual Info: 27C512A 512K 64K x 8 CMOS EPROM PACKAGE TYPES FEATURES • High speed performance PLCC co in ^ co i - 3—, oo i— i— < i<- < z > << • CMOS Technology for low power consumption /LtÌL?M"ÌtéÌL2ÌÌ.2Ì A8 A9 II < fe A11 CM L2 -6 - NC ID \-= A10 O

Contextual Info: LC3564SM-70-TLM IL08D C-MOS 64 K 8192 x 8 -BIT SRAM —TOP VIEW— 10 VDD 28 1 NC 9 8 A12 2 27 WE 7 6 A7 3 26 CE2 5 4 A6 4 25 A8 3 25 A5 5 24 A9 24 21 A4 6 23 A11 23 2 A3 7 22 OE A2 8 21 A10 A1 9 20 CE1 A0 A1 A2 I/O 1 A3 I/O 2 A4 I/O 3 A5 I/O 4 A6 I/O 5 A7

Contextual Info: PRELIMINARY MICRON I TECHNOLOGY, 1 6 M l n b XAM INC. FEATURES 50-Pin TSOP V cc DQ0 DQ1 V ssQ DQ2 DQ3 V ccQ DQ4 DQ5 V ssQ DQ6 DQ7 V ccQ DQ M L W E# C AS# RAS# C S# BA A10 A0 A1 A2 A3 V cc MARKING 1M16 • Plastic Package - OCPL 50-pin TSOP 400 mil TG • Timing

si4688

Abstract: si4688 a 10 si4688-a10 dab radio circuit AM/FM radio schematic diagrams
Contextual Info: Si 4 6 8 8 - A10 S I N G L E - CHIP , F M / H D / D A B / D A B + R A D I O R EC EIVER Features           Worldwide FM band support  76–108 MHz  Advanced RDS/RBDS decoder  FM HD Radio support  Patent-pending fast-HD station

ACME

Abstract: T25x15x8C 15AWG
Contextual Info: 1. M e c h a n ic a l: 2. S c h e m a t i c : 3.0Q Typ 9T 15AWG 1 o- 2 O- 4 -0 3 9T 15AWG Core: A cm e A10 T 2 5 x1 5 x8 C 3. Electrical X F B D 0 6 -C M C 1 2 Ü YYWW OCL: 6 0 0 u H i3 0 % @ 10KHz, Leakage In d u c ta n c e : E — 2 0 .3 2 — A 3 0 .5D Max

27C512-15

Abstract: 27C512A 27C512-12
Contextual Info: Obsolete Device 27C512A 512K 64K x 8 CMOS EPROM DESCRIPTION 30 31 1 32 2 29 6 28 7 27 27C512A 5 8 9 10 11 12 26 25 24 23 22 13 A8 A9 A11 NC OE/VPP A10 CE O7 O6 20 19 18 17 16 21 15 A6 A5 A4 A3 A2 A1 A0 NC O0 3 4 A7 A12 A15 NU Vcc A14 A13 PLCC 14 DIP/SOIC

200B

Abstract: 27LV256 8X13
Contextual Info: 27LV256 256K 32K x 8 Low-Voltage CMOS EPROM PACKAGE TYPES PDIP VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 VSS 30 1 31 32 2 3 4 29 6 28 7 27 8 9 10 11 26 25 24 23 A8 A9 A11 NC OE A10 CE O7 O6 20 19 18 17 16 21 15 22 13 14 12 SOIC VPP A12 A7 A6 A5 A4 A3 A2 A1

YMB 24

Abstract: 28C256ERP f2807
Contextual Info: 32K X 8 EEPROM SPACE ELECTRONICS INC. 28C256ERP SPACE PRODUCTS GROUP A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O7 I/O0 11 18 I/O6 I/O1 12 17 I/O5 I/O3 13 16 I/O4 GND 14 15 I/O3 SEi 28C256ERP

A14C

Contextual Info: 32 k x 8 BIT B ow m arW hite PROGRAMMABLE EEPROM Technology 8023 PIN DIAGRAM A14C 1 A12C 2 28 3 Vcc 27 □ WE A7C 3 A6 C 4 26 □ A13 25 □ A8 24 □ A9 23 □ A11 A5C 5 A4 c 6 A3C 7 A2C 8 A 1C 9 22 DO E 21 □ A10 20 DC E ADC 10 l/OOC 1 1 W01 C 12 I / 0 2 C 13

Contextual Info: IDT71024S20Y-TL 1/2 IL08D C-MOS 1 M (128 x 8)-BIT SRAM —TOP VIEW— 12 1 NC VDD 32 11 10 A16 IN 2 31 A15 IN 9 8 A14 IN 3 30 CS2 IN 7 6 A12 IN 4 29 WE IN 5 27 A7 IN 5 28 A13 IN 26 23 A6 IN 6 27 A8 IN 25 4 A5 IN 7 26 A9 IN 28 3 A4 IN 8 25 A11 IN 31 2 OE IN

Contextual Info: LC361000AMLL-70-TLA 1/2 IL08 C-MOS 1 M (131,072 x 8)-BIT SRAM —TOP VIEW— 2 A16 IN 1 NC VDD 32 31 3 A14 IN 2 31 A15 IN 28 A12 IN 3 30 CE2 IN 25 4 23 WE A7 IN 4 29 A6 IN 5 28 A13 IN IN 26 27 5 6 A5 IN 6 27 A8 IN 7 8 A4 IN 7 26 A9 IN 9 10 A3 IN 8 25 A11 IN

generic prom programming

Abstract: 53s281 53S3281
Contextual Info: 53/63S3281/A 53S3281B Advanced Micro Devices High Performance 4096 x 8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 35-ns maximum access time • Microprogram control store • 32768-bit memory • Microprocessor program store • Reliable tltanium-tungsten fuses TiW with

Contextual Info: S-2812ATF-150-TL IL08 C-MOS 16 K 2 K x 8 -BIT PARALLEL EEPROM —TOP VIEW— 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 NC NC VDD GND NC PIN NO. I/O 1 2 3 4 5 6 7 8 9 10 11 12 13 14 I — I I — I — O — I I I I I SIGNAL

Contextual Info: IDT71V016S20Y-TL IL08D C-MOS 1 M 64 K x 16 -BIT SRAM —TOP VIEW— 5 A4 1 44 A5 A3 2 43 A6 4 3 2 1 A2 3 42 A7 A1 4 41 OE A0 5 40 BHE CS 6 39 BLE 44 43 42 27 26 25 24 21 I/O0 7 38 I/O15 20 19 I/O1 8 37 I/O14 18 I/O2 9 36 I/O13 40 39 I/O3 10 35 I/O12 17 A0

TLC1543

Abstract: TLV1543C TLV1543CDB TLV1543CDW TLV1543CFN TLV1543I TLV1543IDB TLV1543M
Contextual Info: TLV1543C, TLV1543I, TLV1543M 3.3-V 10-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 11 ANALOG INPUTS SLAS072D – DECEMBER 1992 – REVISED JULY 2000 D D D D D D D D D D 3.3-V Supply Operation 10-Bit-Resolution A/D Converter 11 Analog Input Channels

TLP-145V

Abstract: tlp 122 xtal m12 120 M13
Contextual Info: Pin comparison between H8S/2117R and H8S/2112R H8S/2117R Pin No. TFP-144V BP-176V TLP-145V 1 2 3 4 5 6 7 8 9 10 11 12 13 14 N 15 16 17(N) 18 19 20 21 22 23 24 25 26 27 28(T) 29 30(T) 31(T) 32(T) 33(N) 34(N) 35(N) 36 37(N) 38(N) 39(N) 40(N) 41(N) 42 43 44