5SDA Search Results

s20a

Contextual Info: HDLV S20A-5SDAC Fsmily Description The S20A greatly expands the scope and capability of Switch Power’s High Density, Low Voltage HDLV product line. In a compact SIP just 3 inches long the S20A provides 20 Amps of output current at voltages between 1.25 and 3.5V. Using the space saving packaging of a SIP

5SDA11D1702

Contextual Info: 5SDA 11D1702  5SDA 11D1702 Old part no. DA 807-1110-17 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 1 700 V RRM = 1 310

5SDA09D2604

Contextual Info: 5SDA 09D2604  5SDA 09D2604 Old part no. DA 807-880-26 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 600 V RRM = 1 020

05P4417

Abstract: 05P5047
Contextual Info: 5SDA 05P50 5SDA 05P50 Old part no. DA 805-520-50 Avalanche Diode Properties § Low forward voltage drop § Avalanche reverse characteristics § Guaranteed maximum avalanche power dissipation § Version with or without lead § Both polarity options § High operational reliability

Contextual Info: Key Parameters VRRM = 5000 IFAVM = 1410 IFSM = 17.5 VF0 = 1.13 rF = 0.44 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 14F5007 Doc. No. 5SYA 1126 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

3310 DIODE DATASHEET

Abstract: 21F2904
Contextual Info: Key Parameters VRRM = 3200 IFAVM = 2110 IFSM = 26.0 VF0 = 0.89 rF = 0.17 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 21F3204 Doc. No. 5SYA 1130 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

27z1

Contextual Info: VRRM IPULSE VF VDcmax = = = = 12 60 7.32 10 kV kA V kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1202 Features Multichip Design with 6 Wafers in Series For Single Pulse Applications Voltage Sharing Resistors included Compact Design

Contextual Info: 5SDA 09D2604  5SDA 09D2604 Old part no. DA 807-880-26 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 600 V RRM = 1 020

Contextual Info: 5SDA 11D1702  5SDA 11D1702 Old part no. DA 807-1110-17 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 1 700 V RRM = 1 310

Contextual Info: 5SDA 27F2002  5SDA 27F2002 Old part no. DA 808-2700-20 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 000 V RRM = 2 700

5SDA09P1733

Contextual Info: 5SDA09P1733 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current850 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage1.7k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.13.5k V(FM) Max.(V) Forward Voltage1.35 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25

Contextual Info: 5SDA08P2044 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current770 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage2.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.11.5k V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25

Contextual Info: 5SDA19F2905 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.87k @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage2.9k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.23.5k V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)4.0k

5SDA06P3816

Abstract: 5SDA
Contextual Info: 5SDA 06P38 5SDA 06P38 Old part no. DA 805-600-38 Avalanche Diode Properties § Low forward voltage drop § Avalanche reverse characteristics § Guaranteed maximum avalanche power dissipation § Version with or without lead § Both polarity options § High operational reliability

5SDA 27Z1350

Abstract: 27z1
Contextual Info: VRRM IPULSE VF rF VDcmax = = = = = 13.5 60 7.89 0.69 12 kV kA V mΩ kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1350 Doc. No. 5SYA 06PP-01 Oct. 01 • • • • • • Features Multichip Design with 6 Wafers in Series For Single Pulse Applications

27z1

Contextual Info: VRRM IPULSE VF rF VDcmax = = = = = 12 60 7.32 0.48 10 kV kA V mΩ kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1202 Doc. No. 5SYA 05PP-01 Oct. 01 • • • • • • Features Multichip Design with 6 Wafers in Series For Single Pulse Applications

5SDA11D1702

Contextual Info: Key Parameters VRRM = 1700 IFAVM = 1310 IFSM = 15.0 VF0 = 0.74 rF = 0.25 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 11D1702 Doc. No. 5SYA 1119 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

10D1703

Abstract: 10D2303 10D2003
Contextual Info: Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 10D2303 Doc. No. 5SYA 1120 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

Contextual Info: 5SDA 07D3806  5SDA 07D3806 Old part no. DA 807-680-38 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 3 800 V RRM = 790

diode 12 kv

Abstract: 27z1 HIGH VOLTAGE DIODE kv
Contextual Info: VRRM IPULSE VF VDcmax = = = = 13.5 60 7.89 12 kV kA V kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1350 Features Multichip Design with 6 Wafers in Series For Single Pulse Applications Voltage Sharing Resistors included Compact Design

5SDA24F2303

Abstract: 24F2303 24F1703 24F2003
Contextual Info: Key Parameters VRRM = 2300 IFAVM = 2350 IFSM = 29.0 VF0 = 0.84 rF = 0.13 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 24F2303 Doc. No. 5SYA 1131 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

06D4407

Contextual Info: Key Parameters VRRM = 5000 IFAVM = 690 IFSM = 7.0 VF0 = 1.10 rF = 1.01 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 06D5007 Doc. No. 5SYA 1125 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

Contextual Info: 5SDA05P4447 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current520 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage4.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.7.0k V(FM) Max.(V) Forward Voltage2.4 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25

Contextual Info: 5SDA05P4437 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current520 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage4.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.7.0k V(FM) Max.(V) Forward Voltage2.4 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25