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    5N60C Search Results

    5N60C Datasheets (1)

    Maplesemi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge SLF5N60C
    		Maplesemi 600V N-Channel MOSFET with 4.5A continuous drain current, 2.0 ohm typical RDS(on) at VGS = 10V, low gate charge of 16nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. Original PDF
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    5N60C Price and Stock

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    Rochester Electronics LLC FQI5N60CTU

    MOSFET N-CH 600V 4.5A I2PAK
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    DigiKey FQI5N60CTU Bulk 34,688 375
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    Rochester Electronics LLC FQU5N60CTU

    POWER FIELD-EFFECT TRANSISTOR, 2
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    DigiKey FQU5N60CTU Bulk 4,040 496
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    FLIP ELECTRONICS FQI5N60CTU

    MOSFET N-CH 600V 4.5A I2PAK
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    DigiKey FQI5N60CTU Tube 4,000 1,000
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    Rochester Electronics LLC FQB5N60CTM

    4.5A, 600V, 2OHM, N CHANNEL , D2
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    DigiKey FQB5N60CTM Bulk 3,218 343
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    Infineon Technologies AG SPW35N60CFDFKSA1

    MOSFET N-CH 600V 34.1A TO247-3
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    DigiKey SPW35N60CFDFKSA1 Tube 1,139 1
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    Avnet Americas SPW35N60CFDFKSA1 Tube 8 Weeks 240
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    Newark SPW35N60CFDFKSA1 Bulk 2 1
    • 1 $11.98
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    TME SPW35N60CFDFKSA1 30
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    EBV Elektronik SPW35N60CFDFKSA1 9 Weeks 240
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    5N60C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5n60c

    Contextual Info: TM 5N60C / 5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD5N60C FQU5N60C FQD5N60CTF FQD5N60CTM 5n60c PDF