5F MARKING CODE TRANSISTOR Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Features ■ Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F

2SK3546G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain

2SK3547G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te

2SK3539G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain Th an W is k y

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na

BC808-16

Contextual Info: BC808 PNP General Purpose Transistor FEATURES • Suitable for AF-Driver stages and low power output stages MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage

BCX71RG

Abstract: BCW61RB bcw61rd
Contextual Info: T T T SEMI CON DUC TOR S 67 87D DE§ 4tainss DQ02353 1 r 02323 D PNP TRANSISTORS PNP Silicon Transistors Plastic Package TO-236 Marking Code - ~VcEO hpE Volts “ VcEsat at at - V C e/ - I c —Ic/—Ib - I ces at fr “ V ce Cob at -V c e /~I c CD Type

marking code HF

Abstract: transistors 3K
Contextual Info: PNP Transistors PNP Silicon Transistors TO-236 Plastic Package LU 1 Marking Code £ Type hFE -V at —V ce at ce/ - lc fT - I ces -VcEsat at —lo /—I b Cob at -V at -V ce/ - I c V/mA max.V mA/mA max. nA V MHz V/mA max. pF V 45 45 45 25 25 25 65 65 45

BC808

Abstract: BC808-16 BC808-25 BC808-40
Contextual Info: BC808 PNP General Purpose Transistor FEATURES • Suitable for AF-Driver stages and low power output stages MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI • Lead Free in RoHS 2002/95/EC Compliant

Contextual Info: BC808 PNP General Purpose Transistor FEATURES • Suitable for AF-Driver stages and low power output stages MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI • Lead Free in RoHS 2002/95/EC Compliant

4501 ic

Abstract: npn transistors,pnp transistors BC807 BC807-16 BC808 BC808-16 BC817 BC818 marking 5A
Contextual Info: BC807, BC808 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,

BC 194 TRANSISTORS

Abstract: marking code BC marking 5A
Contextual Info: PNP Silicon AF Transistors • • • • • BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type S BC 807-16 S BC 807-25 S BC 807-40 Marking

pt1017

Abstract: mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490
Contextual Info: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253

marking 5A

Abstract: BC807 itt ITT Intermetall
Contextual Info: BC807, BC808 PNP Silicon Epitaxial Planar Transistors for switching, A F driver and amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits. Top View These transistors are subdivided into three groups -16, -25 and -40 according to their current gain.

BC807

Abstract: BC808 SOT23 5C 5F BC 807-25
Contextual Info: BC 807 / BC 808 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP PNP Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1

Contextual Info: BC 807 / BC 808 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP PNP Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1

BC807W

Abstract: BC808W hFE Group
Contextual Info: BC 807W / BC 808W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 PNP Power dissipation – Verlustleistung 225 mW

Contextual Info: BC 807W / BC 808W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 PNP Power dissipation – Verlustleistung 225 mW

Contextual Info: BC807, BC808 Small Signal Transistors PNP FEATURES SOT-23 ♦ PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier " applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,

Contextual Info: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • New Product Marking VCEO hFE @VCE/IC VCEsat @IC/IB ICES @VCE Type Code V V/mA max.V mA/mA max.nA V BC817-16 6A 45 100-250 1/100 0.7 500/50 100 45 BC817-25 6B 45 160-400 1/100 0.7 500/50 100

marking 5CT sot-23

Abstract: 5Ct marking code marking code 5cs marking 5Cs BC807-40/5C code marking 5Ct sot-23 MARKING 5ct 5CS marking code sot 23 5Ct marking code sot 23 BC818
Contextual Info: BC807 / BC808 BC807 / BC808 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2007-04-13 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse