5D DIODE Search Results

MMSD914

Contextual Info: MMSD914 MMSD914 SOD123 Top Marking: 5D Color Band Denotes Cathode TOP MARKING: 5D SOD123 BAND DENOTES CATHODE. Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage

marking d6 sod123 diode

Abstract: marking AA DIODE SOD CBVK741B019 F63TNR MMSD914 MMSZ5221B SOD-123 marking code A1 semiconductor band color code MARKING CODE diode sod123 FS F63TNR 3.2
Contextual Info: MMSD914 MMSD914 SOD123 Top Marking: 5D COLOR BAND DENOTES CATHODE TOP MARKING: 5D SOD123 BAND DENOTES CATHODE. High Conductance Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

marking 5d

Contextual Info: MMSD914 MMSD914 SOD123 Top Marking: 5D COLOR BAND DENOTES CATHODE TOP MARKING: 5D SOD123 BAND DENOTES CATHODE. High Conductance Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

diode t 5d

Abstract: tim 5f diode 5d MARKING 5D DIODE 5dl2c
Contextual Info: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage

l2c48

Contextual Info: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage

marking D76

Contextual Info: D IO D E S SOT-23/TO-236AB ‘TMPD’ GENERAL-PURPOSE DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type Description •f v BR Min. Max. Marking Max. mA (V) 5D 600 100 T M P D 9 14 G e n e ral-P u rpo se TM P D 4 14 8 G e n e ral-P u rpo se 5D

Contextual Info: FE5A / 5B / 5C / 5D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

diode marking 5D

Abstract: marking 5d MMBD914 marking 5D diode
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD914 SWITCHING DIODES FEATURES High-speed switching diode MARKING: 5D Maximum Ratings @TA=25℃ Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage

fairchild top marking

Abstract: MMSD914
Contextual Info: MMSD914 Small Signal Diode SOD123 COLOR BAND DENOTES CATHODE TOP MARKING: 5D Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 200

Contextual Info: FE5A / 5B / 5C / 5D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

Contextual Info: FE5A / 5B / 5C / 5D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

FE5B

Contextual Info: FE5A / 5B / 5C / 5D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

Contextual Info: CMBD914 HIGH SPEED SWITCHING DIODE Marking CMBD914 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 0.09 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE ABSOLUTE MAXIMUM RATINGS Continuous reverse voltage Forward current Peak forward surge current

5D marking

Abstract: 5d sot 23 5D marking DIODE BAS16 IR switch BAS16 marking code 5D
Contextual Info: BAS16 SILICON EPITAXIAL PLANAR SWITCHING DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Marking Code: 5D SOT-23 Plastic Package Applications • Ultra high speed switching application

Contextual Info: MMSD914 Small Signal Diode SOD123 COLOR BAND DENOTES CATHODE TOP MARKING: 5D Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 200

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD914LT1 SOT-23 SWITCHING DIODES FEATURES Power Dissipation PD : 225 mW（Tamb=25℃） MARKING: 5D Maximum Ratings @TA=25 Parameter Symbol Peak Repetitive Peak reverse voltage

MMSD914

Contextual Info: MMSD914 Small Signal Diode SOD123 COLOR BAND DENOTES CATHODE TOP MARKING: 5D Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 200

Contextual Info: MMSD914 Small Signal Diode SOD123 COLOR BAND DENOTES CATHODE TOP MARKING: 5D Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 200

5D marking

Abstract: 5d sot 23 MMBD6050
Contextual Info: MMBD6050 SILICON EPITAXIAL PLANAR SWITCHING DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Applications Marking Code: 5D SOT-23 Plastic Package • Ultra high speed switching application

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 MMSD914 SMALL SIGNAL DIODE FEATURES  High Voltage MARKING: 5D MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit 100 0.2 V VRRM IO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 MMSD914 SMALL SIGNAL DIODE FEATURES  High Voltage MARKING: 5D MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit 100 0.2 V VRRM IO

do-213aa solder PAD DIMENSIONS

Abstract: melf diode D-5D D-5d layout 1N750AUR-1 melf diode marking
Contextual Info: DIODE LEADLESS CHIP CARRIER DLCC1 • Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “MELF-4.5 D-5D ”/ ”DO-213AA” Packages • Designed For High Reliability Military, Aerospace and Space Applications ABSOLUTE

5d marking

Abstract: 5d surface mount diode MMBD4448
Contextual Info: MMBD4448 SURFACE MOUNT SWITCHING DIODE 3 Features • Fast switching speed • High Conductance 1 2 Marking Code: 5D SOT-23 Plastic Package Applications • For general purpose switching Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Reverse Voltage