5C BJT Search Results

an 214 amp schematic diagram

Abstract: ROHM MCR03 ECB-101161
Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features GaAs MESFET      InGaP HBT VC1 Si BiCMOS VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS Si BJT

Contextual Info: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features RFMD’a SXA-3318B amplifier is a high efficiency GaAs Heterojunction

transistor 1p3

Contextual Info: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features RFMD’a SXA-3318B amplifier is a high efficiency GaAs Heterojunction

transistor 1p3

Abstract: SXA3318B SXA3318BZ sirenza rfmd AH03L MCH18 SXA-3318B TAJB104KLRH TAJB106K020R L350
Contextual Info: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features Optimum Technology

MB88307

Abstract: MD-883 MB88300 mb89300
Contextual Info: FU JITSU M B 8 8 3 0 6 M B 8 8 3 0 9 M B 8 8 3 0 7 M B 8 8 3 0 8 octobengae CMOS Output Expander DESCRIPTION Each of the four expanders provides a ierla! I/O port and an 8-bit paral­ lel output port. Data is serially loaded via the input port, converted to an

sm 42056

Contextual Info: RFH RF2104 MICRO DEVICES MEDIUM POW ER AM PLIFIER Typ ical A p plications • Portable Battery Powered Equipment • 4 0 0 MHz Industrial Radios • Commercial and Consumer Systems • Driver for Higher Power Applications • Base Station Equipment 2 POWER AMPLIFIERS

XA3Z

Contextual Info: SXA-389 Z SXA-389(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier with Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic

Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT

25c2625

Abstract: ECB-101161 267M3502104
Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT

a3bz

Contextual Info: SXA389BZ SXA389BZ 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction

ECB-101161

Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features  High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel

a3bz

Abstract: SXA-389BZ Sirenza amplifier SOT-89 Marking 1485C trace code marking RFMD lot code RFMD SXA389BZSQ
Contextual Info: SXA389BZ SXA389BZ 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction

Contextual Info: S3A/B - S3M/B VISHAY 3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER /Li T E M I ri / POWERSEMICONDUCTOR I Features Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 100A Peak Ideally Suited for Automatic Assembly

xa3b

Contextual Info: SXA-389B Z SXA-389B(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features

Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT

VARIABLE POWER SUPPLY. 0 - 30V

Contextual Info: RF RF2302 MICRO DEVICES BROADBAND LINEAR VARIABLE GAIN AM PLIFIER T y p ic a l A p p lic a tio n s • CDMA Cellular/PCS and JCDMA Systems • Wireless Local Loop Systems • TDMA Cellular/PCS Systems • Wideband CDMA Systems • GSM Systems • PDC Systems 950MHz and 1450MHz

InP transistor HEMT

Abstract: sxa389z XA3Z MCH18 SXA-389 SXA-389B SXA-389Z
Contextual Info: SXA-389 Z SXA-389(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier with Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic

a3bz

Abstract: MMIC SXA 389Bz marking MCH18 SXA-389B trace code marking RFMD EL115
Contextual Info: SXA-389B Z SXA-389B(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plastic

sma 42056

Abstract: H331 ECUV1H330JCG panasonic ECU-V1 RF2104 ECSH1CC106R CE CAPACITOR PANASONIC Panduit ECU-V1H101JCG panasonic ce series Capacitor
Contextual Info: RFEÜ RF2104 M ICRO-DEVICES MEDIUM POW ER A M PLIFIER T y p ic a l A p p lic a tio n s • Portable Battery Powered Equipment • 400M Hz Industrial Radios • Commercial and Consumer Systems • Driver for Higher Power Applications • Base Station Equipment

a3bz

Abstract: SXA-389B Sirenza amplifier SOT-89 MMIC SOT 89 marking CODE c4 MCH18 267M3502104 marking c7 sot-89 marking code sirenza SXA-389BZSQ EL115
Contextual Info: SXA-389B Z SXA-389B(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plastic

2n7002ltig

Abstract: BJT with V-I characteristics AND8305 power BJT Alternator regulator Q5 LED MBRD360 NCP3063DR2G TLV431ASN1T1G BAV99LT1
Contextual Info: AND8305/D 350 mA Buck Boost LED Driver using Bipolar Junction Transistors BJTs , High Side Current Sensing and a NCP3063 Controller http://onsemi.com Prepared by: DENNIS SOLLEY ON Semiconductor INTRODUCTION (typically absorbed by avalanching alternator rectifiers or

2n7002ltig

Abstract: TLV431ASN1T1G LRC-LR1206-01-R400-F 2N7002LTI MBRD360 5C BJT NST30010MXV6T1G power BJT PNP BAV99LT1 MBRA340
Contextual Info: AND8305/D 350 mA Buck Boost LED Driver using Bipolar Junction Transistors BJTs , High Side Current Sensing and a NCP3063 Controller http://onsemi.com Prepared by: DENNIS SOLLEY ON Semiconductor INTRODUCTION (typically absorbed by avalanching alternator rectifiers or

CDP65C51

Abstract: diagram remote control receiver and transmitter CDP65C51A CDP65 CDP65C51A-4
Contextual Info: 1 h a f r f J a n u a ry 1 9 9 1 r i C D P 6 5 C 51 C D P 65C 51A s CMOS Asynchronous Communications Interface A dapter (ACIA) P in o u t F e a tu re s • • • • • • » • • • • • • • • C o m p a tib le W ith 8 - B it M ic ro p ro c e s s o rs

CDP65C51A

Abstract: CDP65C51
Contextual Info: 1 h a f r f J a n u a ry 1 9 9 1 r i C D P 6 5 C 51 C D P 65C 51A s CMOS Asynchronous Communications Interface A dapter (ACIA) P in o u t F e a tu re s • • • • • • » • • • • • • • • C o m p a tib le W ith 8 - B it M ic ro p ro c e s s o rs