5A PNP TO 220 Search Results

TIP127 equivalent

Abstract: equivalent of TIP122 TIP121 TIP122 TIP125 TIP126 TIP127 TIP120 TIP127 circuit
Contextual Info: TIP125, TIP126, TIP127 PNP Darlington Transistors Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren PNP Version 2004-07-01 Collector current – Kollektorstrom 5A Plastic case Kunststoffgehäuse TO-220AB Weight approx. – Gewicht ca. 2.2 g Plastic material has UL classification 94V-0

Contextual Info: TIP125, TIP126, TIP127 PNP Darlington Transistors Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren PNP Version 2004-07-01 Collector current – Kollektorstrom 5A Plastic case Kunststoffgehäuse TO-220AB Weight approx. – Gewicht ca. 2.2 g Plastic material has UL classification 94V-0

2SA1679

Abstract: ITO-220
Contextual Info: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1679 Case : ITO-220 TP5T4 Unit : mm -5A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: SHINDENGEN Switching Power Transistor HSV Series OUTLINE DIMENSIONS 2SA1878 Case : ITO-220 TP5T8 Unit : mm -5A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1679 Case : ITO-220 TP5T4 Unit : mm -5A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SA1878

Abstract: ITO-220
Contextual Info: SHINDENGEN Switching Power Transistor HSV Series OUTLINE DIMENSIONS 2SA1878 Case : ITO-220 TP5T8 Unit : mm -5A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SA1878

Abstract: ITO-220
Contextual Info: SHINDENGEN Switching Power Transistor HSV Series OUTLINE DIMENSIONS 2SA1878 Case : ITO-220 TP5T8 Unit : mm -5A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SA1878

Abstract: ITO-220
Contextual Info: SHINDENGEN Switching Power Transistor HSV Series OUTLINE DIMENSIONS 2SA1878 Case : ITO-220 TP5T8 Unit : mm -5A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SA1679

Abstract: ITO-220
Contextual Info: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1679 Case : ITO-220 TP5T4 Unit : mm -5A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SA1679

Abstract: ITO-220
Contextual Info: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1679 Case : ITO-220 TP5T4 Unit : mm -5A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

UP1853G-AA3-R

Abstract: UTC SILICON PNP 3A TRANSISTORS UP1853
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS „ FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS „ FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS  FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W

EN1059D

Abstract: 2SA1259 EN105
Contextual Info: Ordering number:EN1059D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1259/2SC3145 60V/5A for High-Speed Drivers Applications Features Package Dimensions • High fT. · High switching speed. · Wide ASO. unit:mm 2010C [2SA1259/2SC3145] JEDEC : TO-220AB

Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T 1 TO-220 PNP Epitaxial Silicon Darlington Transistor

D1722

Abstract: B1165 2SB1165
Contextual Info: Ordering num ber: EN2046A 2SB1165/2SD1722 PNP/NPN Epitaxial Planar Silicon Transistors 50V/5A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage . High fT . Excellent linearity of hpE

D1722

Abstract: 2SB1165 B116 ua 722 fc
Contextual Info: O rdering num ber: EN2046A 2SB1165/2SD1722 PNP/NPN Epitaxial Planar SiliconTransistors 50V/5A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage . High fT . Excellent linearity of hFE

2043A

Abstract: 2SB1165
Contextual Info: Ordering number:2046A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1165/2SD1722 50V/5A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2043A Features [2SB1165/2SD1722] · Low collector-to-emitter saturation voltage.

FCX1051A

Abstract: FCX1151A DSA003684
Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;

Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;

Contextual Info: STD888T4 Medium Current, High Performance, Low Voltage PNP Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 5A continuous collector current ■ Surface mounting DPAK TO-252 power package in tape & reel packing

MARKING SMD PNP TRANSISTOR 2a

Abstract: smd transistor 2A FCX1151A MARKING 25 SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1151A Features 2W power dissipation. 5A peak pulse current. Excellent HFE characteristics up to 5 Amps. Extremely low saturation voltage E.g. 60mv Typ. Extremely low equivalent on-resistance. RCE sat 66mÙ at 3A.

Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER D IS S IP A T IO N * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Am ps Extrem ely Low Saturation Voltage E.g. 60mv Typ. Extrem ely Low Equivalent On-resistance;

DC to DC converter 5v to 100V

Abstract: 2SA1396 2SC3568 5V 5A voltage regulator
Contextual Info: JMnic Product Specification 2SA1396 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3568 ・Low collector saturation voltage ・High switching speed APPLICATIONS ・Switching regulator ・DC-DC converter ・High frequency power amplifier