5A 800V Search Results

DC-2000

Abstract: STP5NB80 STP5NB80FP
Contextual Info: STP5NB80 STP5NB80FP N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP5NB80 STP5NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 2.2 Ω < 2.2 Ω 5A 5A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STP5NB80 STP5NB80FP N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP5NB80 STP5NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 2.2 Ω < 2.2 Ω 5A 5A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STP5NB100

Abstract: STP5NB100FP AC to DC smps circuit diagram schematic diagram smps supply SWITCHING WELDING SCHEMATIC BY MOSFET
Contextual Info: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STP5NB100FP

Abstract: STP5NB100
Contextual Info: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STP5NB100

Abstract: STP5NB100FP
Contextual Info: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

ERC20M

Contextual Info: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability

dd 22 s 800

Abstract: STB5NB80
Contextual Info: STB5NB80 N - CHANNEL 800V - 1.8Ω - 5A - D2PAK PowerMESH MOSFET TYPE V DSS R DS on ID STB5NB80 800 V < 2.2 Ω 5A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

power Diode 800V 5A

Abstract: ERC20M
Contextual Info: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability

power Diode 800V 5A

Abstract: diode 5A 800V
Contextual Info: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability

Contextual Info: R8005ANJ Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

Contextual Info: YG226S8 5A (800V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design

Contextual Info: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

power Diode 800V 5A

Contextual Info: YG226S8 5A (800V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design

Contextual Info: STB5NB80 N - CHANNEL 800V - 1.8Ω - 5A - D2PAK PowerMESH MOSFET TYPE V DSS R DS on ID STB5NB80 800 V < 2.2 Ω 5A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

ERC20

Contextual Info: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ

power Diode 800V 5A

Contextual Info: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ

d400 e

Abstract: power Diode 800V 5A
Contextual Info: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ

ERC20

Contextual Info: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ

2SC3927

Abstract: DSA0016508
Contextual Info: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse15) A hFE VCE=4V, IC=5A 10 to 28 5 A VCE(sat) IC=5A, IB=1A 0.5max PC

2SC4557

Contextual Info: 2SC4557 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 28 A VCE(sat) IC=5A, IB=1A 0.5max 80(Tc=25°C)

2SC4557

Contextual Info: 2SC4557 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 10(Pulse20) A hFE V 5 A VCE(sat) IC=5A, IB=1A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=5A, IB=1A

TM583S-L

Abstract: TM583S tm583sl triac 800V 1A triac 1500v
Contextual Info: TO-220F 5A Triac TM583S-L • Features External Dimensions ●Gate trigger current: IGT =20mA max MODE , , 13.0 min ●Isolation voltage: VISO=1500V (50Hz Sine wave, RMS) 0.2 0.2 3.9± 0.8± 0.3 16.9± 0.2 8.4± ●RMS on-state current: I T(RMS) =5A 10.0

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5UM-16A HIGH-SPEED SWITCHING USE FS5UM-16A • VOSS . 800V • TDS ON (MAX) . 2 .3 ÎÎ • I D . 5A

diode 1000V 10a

Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
Contextual Info: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A