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    5N/10 Search Results

    5N/10 Datasheets (26)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    5N100
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 29.7KB 1
    5N100
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 29.7KB 1
    badge 5N10
    		Shenzhen Heketai Electronics Co Ltd N-channel high voltage MOSFET in SOT-23-3L package with 100V drain-source voltage, 5A continuous drain current, 115mΩ on-resistance at VGS=10V, and low input capacitance for fast switching applications.N-channel high voltage MOSFET with 100 V drain-source voltage, 5 A continuous drain current, 115 mΩ on-resistance at VGS=10V, and low input capacitance in SOT-23-3L surface mount package. Original PDF
    badge AKP095N10
    		AK Semiconductor AKP095N10 N-Channel Super Trench II Power MOSFET with 100V VDS, 65A ID, 8.5mΩ RDS(on) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge SK05N10A
    		Shikues Semiconductor Advanced trench tech, low gate charge, high density cell, excellent heat dissipation, power switching, UPS. Original PDF
    badge AKP055N10
    		AK Semiconductor N-channel Super Trench II Power MOSFET with 100V VDS, 110A ID, 5.4mΩ RDS(on) (TO-220), 5.2mΩ RDS(on) (TO-263), low gate charge, suitable for high-frequency switching and synchronous rectification. Original PDF
    badge SLD_U15N10T
    		Maplesemi N-channel 100V 15A Power MOSFET with RDS(on) of 95mΩ at VGS = 10V, advanced TRENCH technology, low Crss, fast switching, and 100% avalanche tested for PWM and power management applications. Original PDF
    badge AKP065N10
    		AK Semiconductor AKP065N10 N-Channel Super Trench II Power MOSFET with 100V drain-source voltage, 93A continuous drain current, 6.0mΩ typical RDS(ON) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge NM0805N101J251CPBN
    		Hui Ju (Capacitors) Multilayer ceramic capacitor, NM Series, mid-voltage, rated 100V to 630V, available in various case sizes with X7R and C0G dielectrics, lead-free termination, RoHS compliant. Original PDF
    badge SK15N10
    		Shikues Semiconductor N-Channel 100V MOSFET, RDS(ON)≦100mΩ@VGS=10V, low RDS(ON), high DC current, medium voltage applications. Original PDF
    badge SL05N10A
    		SLKOR Original PDF
    badge HSS5N10
    		Huashuo Semiconductor N-channel 100V fast switching MOSFET with 15A continuous drain current, 100mΩ typical RDS(on), low gate charge, and high cell density trench technology for synchronous buck converter applications. Original PDF
    badge HKT05N10
    		Shenzhen Heketai Electronics Co Ltd N-channel high voltage MOSFET with 100 V drain-source voltage, 5 A continuous drain current, 115 mΩ on-resistance at VGS=10V, and low input capacitance in SOT-23-3L surface mount package. Original PDF
    badge CJU15N10
    		JCET Group N-channel Power MOSFET CJU15N10 with 100V drain-source voltage, 15A continuous drain current, 70mΩ RDS(on) at 10V VGS, featuring low gate charge, fast switching, and avalanche energy rating. Original PDF
    badge SL15N10A
    		SLKOR VDS 100V, ID 15A, RDS(ON) at VGS=10V <115mohm, at VGS=4.5V <10mohm, Trench Power MV MOSFET, high density cell, heat dissipation, DC-DC Converters, power management. Original PDF
    badge SL65N10Q
    		SLKOR Original PDF
    badge MDD15N10D
    		Microdiode Semiconductor (MDD) Power Field-Effect Transistor Original PDF
    badge NCEAP25N10AG
    		NCEPOWER NCEAP25N10AG is an automotive-grade N-channel Super Trench II power MOSFET with 100 V drain-source voltage, 32 A continuous drain current, and low on-resistance of 21 mΩ at 10 V gate-source voltage, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge HKTD15N10
    		Shenzhen Heketai Electronics Co Ltd N-channel Power MOSFET HKTD15N10 with 100V drain-source voltage, 15A continuous drain current, and 100mΩ maximum RDS(on) at VGS=10V, available in TO-252 package. Original PDF
    badge NCEAP25N10AD
    		NCEPOWER NCEAP25N10AD is an N-channel Super Trench II power MOSFET with 100 V drain-source voltage, 37 A continuous drain current, and low on-resistance of 21 mΩ at 10 V gate-source voltage, optimized for high-frequency switching and synchronous rectification. Original PDF
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    5N/10 Price and Stock

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    Nextgen Components 0805N101J500AD

    CAP,SMD,0805,NP0,100PF,5%,50V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0805N101J500AD Tape & Reel 4,000,000 20,000
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    Rochester Electronics LLC SPP35N10

    MOSFET N-CH 100V 35A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP35N10 Tube 30,218 278
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    • 1000 $1.08
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    onsemi ENGNTLEF1D5N10GN1TXG

    GAN FET 100V, 1.1M, 5X6 LGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () ENGNTLEF1D5N10GN1TXG Tape & Reel 2,478 2,500
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    ENGNTLEF1D5N10GN1TXG Cut Tape 2,478 1
    • 1 $7.98
    • 10 $5.41
    • 100 $3.95
    • 1000 $3.83
    • 10000 $3.83
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    Infineon Technologies AG IAUZ40N06S5N105ATMA1

    MOSFET_)40V 60V) PG-TSDSON-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () IAUZ40N06S5N105ATMA1 Cut Tape 2,391 1
    • 1 $1.52
    • 10 $0.96
    • 100 $0.64
    • 1000 $0.45
    • 10000 $0.42
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    IAUZ40N06S5N105ATMA1 Digi-Reel 2,391 1
    • 1 $1.52
    • 10 $0.96
    • 100 $0.64
    • 1000 $0.45
    • 10000 $0.42
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    IAUZ40N06S5N105ATMA1 Tape & Reel 2,391 5,000
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    • 10000 $0.35
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    Rochester Electronics IAUZ40N06S5N105ATMA1 1,711 1
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    • 100 $0.45
    • 1000 $0.37
    • 10000 $0.33
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    EBV Elektronik IAUZ40N06S5N105ATMA1 33 Weeks 5,000
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    onsemi FDP045N10A-F102

    MOSFET N-CH 100V 120A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDP045N10A-F102 Tube 952 1
    • 1 $5.31
    • 10 $5.31
    • 100 $2.53
    • 1000 $1.99
    • 10000 $1.99
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    Flip Electronics FDP045N10A-F102 182,400
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